Other

Kabushiki Kaisha Watanabe Shoko

Wacom R&d Corporation

Alps Electric Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Nippon Sanso Corporation

Sumitomo Seika Chemicals Co., Ltd.

Organo Corporation

Kabushiki Kaisha Motoyamaseisakusho

Wacom Corporation Limited

Toda, Masayuki

Masayuki Toda

Masaru Umeda

Masaki Kusuhara

Mitsuru Fukagawa

Tadahiro Ohmi

Yoichi Kanno

Yasuhiko Kasama

Kenichi Mitsumori

Shigeki Sakai

Mitsue Takahashi

Akira Abe

Oh Eui Yeol

Michio Yagai

Yoshio Ishihara

Osamu Uchisawa

Yoshikazu Sasaki

Kohei Yamamoto

Toshikatu Meguro

Mikio Doi

Takashi Imaoka

Takayuki Imaoka

Takashi Onoda

Shinji Kobayashi

Masatoyo Yoshinaka

Yuichiro Morimitsu

Taro Ashida

Masaru c/o Kabushiki Kaisha Watanabe Shoko Umeda

Masaki c/o Kabushiki Kaisha Watanabe Shoko Kusuhara

Mitsuru c/o Wacom Electric Co Ltd Fukagawa

A FeFET and a method of its manufacture are provided, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm&#x3c;dr&#x3c;150 nm, without impairing the data retention property of not less than 10seconds and the data rewrite endurance property of not less than 10times, of those that have hitherto been developed, and the FeFET allowing a memory window of 0.40 V or more when a sweep amplitude of the gate voltage is not more than 3.3 V.

Method of making semiconductor ferroelectric memory element, and semiconductor ferroelectric memory transistor

A semiconductor memory element is provided including a laminated structure, in which a memory member and a conductor are superposed on a semiconductor substrate. The memory member has a bottom surface in contact with the semiconductor substrate, an upper surface in contact with the conductor, and side surfaces, which are in contact with and surrounded by a partition wall; the bottom surface of the memory member has a width of equal to or not more than 100 nm; a shortest distance between the conductor and the semiconductor substrate is twice or more of the width of the bottom surface of the memory member; the side surface of the memory member has a width, which is either the same as the width of the bottom surface and constant at any position above the bottom surface, or the widest at a position other than the bottom surface and above the bottom surface.

Semiconductor memory element, other elements, and their production methods

[Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm&#x3c;dr&#x3c;150, without impairing the data retention property of not less than 10seconds and the data rewrite withstand property of not less than 10times, of those that have hitherto been developed, and the FeFET allowing data to be written with a writing voltage whose absolute value is not more than 3.3 volts. [Means for Solving] In methods of making a device in which an insulator, a film made of constituent elements of a bismuth layered perovskite crystalline ferroelectric and a metal are sequentially formed in the indicated order on a semiconductor substrate and thereafter are annealed for ferroelectric crystallization, thereby preparing the device composed of the semiconductor, insulator, ferroelectric and metal, a method of making a semiconductor ferroelectric memory element in which the film is composed of Ca. Sr, Bi, Ta and oxygen atoms, the metal is Ir or Pt or an alloy of Ir and Pt, or Ru, and the annealing for ferroelectric crystallization is performed in a mixed gas having oxygen added to nitrogen or a mixed gas having oxygen added to argon.

To obtain a vaporizer in which thin film-forming raw material solutions are stably and reliably carried by a carrier gas while being reliably separated within the dispersion unit body and the plurality of thin film-forming raw material solutions are stably vaporized in the subsequent vaporization unit, a center rod used in the vaporizer, and a method for vaporizing raw materials entrained by a carrier gas. A carrier gas introduction bore is formed in the center axis direction of the dispersion unit body. A center rod is inserted in the carrier gas introduction bore. The interspace between the inner wall of the bore and the outer wall of the rod forms a gas passage. Multiple thin film-forming material supply units are situated midway of the gas passage of the dispersion unit body, supplying thin film-forming materials. The center rod has sealing members in the longitudinal direction of the center rod.

Vaporizer, center rod used therein, and method for vaporizing material carried by carrier gas

A ferroelectric device and a manufacturing method are provided. While holding a nonvolatile memory retention capability and a multiple rewriting endurance as the distinctive features of a ferroelectric device, the disclosed ferroelectric device is wider in memory window and more adaptively made microfiner than a conventional ferroelectric device that has used a ferroelectric mainly constituted of Sr&#x2014;Bi&#x2014;Ta&#x2014;O as an oxide of strontium, bismuth and tantalum. Directly on or with intermediary of an insulator on a semiconductor there are layered a first ferroelectric and a conductor to form a gate stack, the first ferroelectric being mainly constituted of Sr&#x2014;Ca&#x2014;Bi&#x2014;Ta&#x2014;O as an oxide of strontium, calcium, bismuth and tantalum and being built up by a metal organic vapor deposition technique from a suitable film-forming raw material. The gate stack is heat-treated to cause the first ferroelectric to develop its ferroelectricity.

Ferroelectric device and method of its manufacture

Because an evaporating apparatus for use in an MOCVD film deposition system has a structure in which a plurality of gas passages brings in a gas from the upper direction, the apparatus has a difficulty to position a jet nozzle, and the apparatus is incapable of accurately controlling the pressure and flow rate of a carrier gas mixed with a raw material solution to be issued into an evaporating unit, and it is thus difficult to highly accurately control the composition of MOCVD films. A plurality of gas passages is arranged on a flat, disk-shaped plate. With this configuration, the accurate positioning of the jet nozzle can be made easier, and the composition of MOCVD films can be controlled highly accurately.

Evaporation method and film deposition method

Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.

Method for cooling and dispersing a carrier gas, and method for vaporizing a carrier gas

Center rod for use in the carburetor or carburetor for MOCVD

Carburetor, carburetor for MOCVD using same, center rod for use in the carburetor or carburetor for MOCVD, method for dispersing carrier gas, and method for vaporizing carrier gas

In manufacturing of a carboxyl group-containing water-soluble polymer by a precipitation polymerization method, a method which can improve production efficiency with increasing practicality continuously adds a monomer solution wherein a monomer component containing an &#x3b1;,&#x3b2;-unsaturated carboxylic acid is dissolved in an inert solvent in a concentration of 20 to 50% by volume to an inert solvent charged in a reaction vessel. In this case, the amount of the inert solvent charged in the reaction vessel is set so that the concentration of the monomer component in the total amount summed up with the monomer solution is 10 to 24% by volume, and the time period until completion of continuous addition of the total amount of the monomer solution is set so that the conversion of the monomer component at the time of completion of addition of the total amount of the monomer solution is 60% or more. The monomer component may contain a polymerizable compound having two or more ethylenically unsaturated groups.

Method for manufacturing carboxyl group-containing water-soluble polymer

Vaporizing apparatus and film forming apparatus provided with vaporizing apparatus

The wet treatment liquid feed nozzle of the invention comprises an introducing pathhaving an introducing porta discharging pathhaving a discharging porta crossing sectionformed by causing the introducing pathand the discharging pathto cross at the other ends thereof, a nozzle assemblyhaving an opening sectionopening to an object to be treatedprovided at the crossing sectionand pressure control meansfor controlling the difference between the pressure of the wet treatment liquid in contact with the object to be treatedand the atmospheric pressure provided at least on the discharging pathside so that the wet treatment liquid having been in contact with the object to be treatedvia the opening sectiondoes not flow to outside the discharging path

Liquid feed nozzle, wet treatment, apparatus and wet treatment method

The wet treatment liquid feed nozzle of the invention comprises an introducing path having an introducing port, a discharging path having a discharging port, a crossing section formed by causing the introducing path and the discharging path to cross at the other ends thereof, a nozzle assembly having an opening section opening to an object to be treated, provided at the crossing section, and pressure control means, for controlling the difference between the pressure of the wet treatment liquid in contact with the object to be treated and the atmospheric pressure provided at least on the discharging path side so that the wet treatment liquid having been in contact with the object to be treated via the opening section does not flow to outside the discharging path.

Liquid feed nozzle, wet treatment apparatus and wet treatment method

Disclosed is a vaporizer constituted of a dispersing sectionand a vaporizing section. The dispersing sectioncomprises a gas introduction portfor introducing a carrier gasunder pressure into a gas passage, means for feeding raw material solutionsandto the gas passage, and a gas outletfor delivering the carrier gas containing the raw material solutions to the vaporizing section. The vaporizing sectioncomprises a vaporizing tubehaving one end connected to a reaction tube of the MOCVD system and having the other end connected to the gas outletof the dispersing section, and heating means for heating the vaporizing tube. The vaporizing sectionserves to heat and vaporize the raw material solution containing carrier gasdelivered from the dispersing section. The dispersing sectionincludes a dispersing section bodyhaving a cylindrical hollow portion, and a rodhaving an outer diameter smaller than the inner diameter of the cylindrical hollow portion. The rodhas a spiral grooveformed in the external periphery closer to the vaporizing section, the rod ibeing inserted into the cylindrical hollow portion.

Vaporizer for MOCVD and method of vaporizing raw material solutions for MOCVD

A levitation transportation device capable of adjustment when an object being transported is displaced from the center of a transportation path, A levitation transportation device having a transportation path forming a transportation router for an object to be transported, a plurality of jetting nozzles for transporting the object in a levitated manner along the transportation path, one or more detection sections for detecting the direction of the transportation of the object being transported in the transportation path and a control section for independently controlling the plurality of jetting nozzles based on a detection result by the detection sections.

Levitation transportation device and levitation transportation method

Growing community of inventors

Tokyo, Japan

Masayuki Toda