Fujitsu Corporation

Masayuki Takeda

Keiji Watanabe

Shirou Ozaki

Norikazu Nakamura

Shoichi Suda

Kazuaki Kurihara

Toshihide Kikkawa

Toshihiro Ohki

Kenji Imanishi

Masahito Kanamura

Eishin Yamakawa

Toyoo Miyajima

Hiroshi Chiba

Tsukasa Itani

Koji Nozaki

Tadahiro Imada

Junichi Kon

Akinori Matsuno

Masayuki Hasegawa

Hirofumi Kitagawa

Toshimitsu Handa

A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the insulating film, and a protection film covering the insulating film, the protection film being formed by thermal CVD, thermal ALD, or vacuum vapor deposition.

Semiconductor device

A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode.

Semiconductor device, power-supply unit, amplifier and method of manufacturing semiconductor device

A semiconductor device includes a compound semiconductor multilayer structure, a fluorine-containing barrier film that covers a surface of the compound semiconductor multilayer structure, and a gate electrode that is arranged over the compound semiconductor multilayer structure with the fluorine-containing barrier film placed the gate and the compound semiconductor multilayer structure.

Semiconductor device, method for manufacturing the same, power supply apparatus and high-frequency amplification unit

A semiconductor device may include a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode in contact with the first semiconductor layer or the second semiconductor layer, an opening formed in the second semiconductor layer, an insulating film formed on an inner surface of the opening formed in the second semiconductor layer and above the second semiconductor layer, a gate electrode formed in the opening via the insulating film, and a protective film formed on the insulating film and including an amorphous film containing carbon as a major component.

Semiconductor device and method of fabricating the semiconductor device

A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.

Method of manufacturing semiconductor device and method of cleaning semiconductor substrate

An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.

Etching method, method for manufacturing semiconductor device, and etching device

The present invention provides a surface-modified resist pattern which contains a resist pattern having low etch resistance by itself but having a modified and etch-resistant surface and is suitable for fine and high-definition patterning, and a method for efficiently forming the same. The method forms a surface-modified resist pattern having an etch-resistant surface by selectively depositing an organic compound on a resist pattern. The deposition is preferably carried out by using plasma of a gas. The method preferably includes arranging the organic compound so as to face the resist pattern, the organic compound having been deposited on a base material, and depositing the organic compound onto the resist pattern. The plasma of the gas is preferably introduced from an opposite side of the base material to the organic compound deposited thereon.

Etch-resistant film, forming method thereof, surface-modified resist pattern, forming method thereof, semiconductor device and manufacturing method thereof

A network monitoring method and system reduces a load to a monitoring network without deteriorating accuracy of detecting a malfunction. A plurality of network constituent elements that constitute a communication network are connected to an operation system through a monitoring network. A health check for detecting a malfunction is periodically performed between a group of the network constituent elements positioned closed to each other within the communication network at a short monitoring period. A health check of malfunction detection on all of the network constituent elements is performed by the operation system at a long monitoring period longer than the short monitoring period.

Network monitoring method and apparatus

A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.

Magnetic disk drive having a surface coating on a magnetic disk

A manufacturing method of a magnetic head includes a process for forming a lift-off mask pattern on a magnetoresistance effect element, such that the upper part of the lift-off mask pattern is larger in size than the lower part, a process for forming a couple of electrodes on the magnetoresistance effect element using the lift-off mask pattern as a mask, and a process for removing the lift-off mask pattern. The process for forming the lift-off mask pattern is performed according to a dry etching process.

Growing community of inventors

Kawasaki, Japan

Masayuki Takeda