Sumitomo Chemical Company, Limited

Sharp Kabushiki Kaisha Corporation

Dongwoo Fine-chem Co., Ltd.

Nec Electronics Corporation

Other

Samsung Electronics Co., Ltd.

Kanto Chemical Co., Inc.

Masayuki Takashima

Gaku Yoshikawa

Masahiro Yoshida

Toshiaki Fujihara

Masakazu Miyamoto

Ryosuke Yuminami

Hidemitsu Aoki

Dong-Min Kang

Hiroaki Tomimori

Young-Nam Kim

Hyun-joon Kim

Chun-Deuk Lee

Myun-Kyu Park

Jung-Jea Myung

Byoung-Woo Son

Hiroshi Morita

Itaru Kanno

Naoki Yokoi

Kazumasa Ueda

Keiji Hirano

Yoshiko Kasama

Kentaro Masui

Tatsuya Koito

Naoki Ichiki

Kenichi Sawara

Kenichi Tokioka

Tsuyoshi Kameda

Hideaki Nezu

Shohei Hotta

A liquid crystal panel (display panel)includes a display area AA configured to display images, a non-display area NAA outside the display area AA, a light blocking layer (a light blocking portion)disposed at least in the non-display area NAA and configured to block light, a signal line connection line (a narrow line portion)where lines are arranged at intervals in the non-display area NAA, and a common electrode connection line portion (a wide line portion)disposed in the non-display area and having a line width greater than that of the signal line connection lineand including empty portions

Display device

A method for producing a semiconductor light-emitting device containing a substrate, an element and an encapsulating material as constituent members is provided. The method involves providing the substrate with the element; potting at least one encapsulating material (i) before curing selected from addition polymerization-type encapsulating materials and polycondensation-type encapsulating materials onto the substrate to cover the element; curing the potted encapsulating material (i); potting a polycondensation-type encapsulating material (ii) before curing onto the encapsulating material (i) after curing which covers the element, and then curing the potted polycondensation-type encapsulating material (ii), thereby laminating the encapsulating material. A semiconductor light-emitting device produced by the method is also provided, in which two or more layers each containing the encapsulating material are laminated.

Method for producing semiconductor light-emitting device

A silicone-based encapsulating material composition contains a bifunctional thermosetting silicone resin (A), a multifunctional thermosetting silicone resin having a hydroxyl group (B), and a curing catalyst (C). In the composition, a weight-average molecular weight of the component (A) is 300 to 4,500, a mass ratio of the component (B) relative to a total mass of the component (A) and the component (B) is 0.5% by mass or more and less than 100% by mass, an average functional number of the component (B) is 2.5 to 3.5, and the repeating units constituting the component (B) which are trifunctional account for 50% by mass or more relative to a total mass of the component (B). A visible light transmittance measured at an optical path length of 1 cm and a wavelength of 600 nm is 70% or higher.

Silicone-based encapsulating material composition and semiconductor light-emitting device

A method for producing a semiconductor light-emitting device having a substrate, an element and an encapsulating material as constituent members, includes: a first step of providing the substrate with the element; a second step of potting an uncured encapsulating material onto the substrate to cover the element; and a third step of curing the potted encapsulating material in such a manner that all of the following formulae (1), (2) and (3) are satisfied when the absorbances which a cured encapsulating material having a thickness of t [nm] has at wavelengths of 380 nm, 316 nm and 260 nm are represented by Abs(t), Abs(t) and Abs(t), respectively, and the light transmittance thereof at 380 nm is represented by T(t): (1) T(1.7)&#x2265;90%; (2) Abs(t)&#x2212;Abs(t)&#x3c;0.011t; and (3) Abs(t)&#x2212;Abs(t)&#x3c;0.125t.

A method for producing a semiconductor light-emitting device involves applying a silicone resin composition to a surface of a semiconductor light-emitting element and forming an encapsulating portion covering the surface of the light-emitting element by heat curing the applied resin composition. The silicone resin composition contains at least 60% by mass of a silicone resin in which the constituent silicon atoms are substantially only silicon atoms to which three oxygen atoms are bonded. The heat curing satisfies 5&#x3c;a&#x2212;b&#x3c;20, in which 'a cm' is an infrared absorption spectrum peak position assigned to Si&#x2014;O&#x2014;Si linkages in a range from 1,000 to 1,050 cmof the silicone resin before the heat curing and 'b cm' is an infrared absorption spectrum peak position assigned to Si&#x2014;O&#x2014;Si linkages in a range from 950 to 1,050 cmof the silicone resin composition after the heat curing.

A silicone resin liquid composition containing a silicone resin is provided. TheSi-NMR measurement of the resin exhibits a ratio of the area of signals assigned to A3 silicon atoms to the area of all signals derived from silicon atoms of 51% to 69%. An A3 silicon atom represents a silicon atom to which are bonded three oxygen atoms bonded to another silicon atom.

Silicone resin liquid composition

A phosphoric acid-based catalyst is used as a cure accelerator for a polysilsesquioxane-based UV-LED-encapsulating material, a cured product of which has a light transmittance of 65% or more at 260 nm. A polysilsesquioxane-based UV-LED-encapsulating material composition contains a polysilsesquioxane-based UV-LED-encapsulating material and a phosphoric acid-based catalyst.

Polysilsesquioxane based encapsulating material composition for UV-LED and use of phosphoric acid based catalyst therefor

A composition for removing an insulation material and related methods of use are disclosed. The composition comprises about 1 to 50 percent by weight of an oxidizing agent, about 0.1 to 35 percent by weight of a fluorine-containing compound, and water. The insulation material comprises at least one of a low-k material and a protection material.

Composition for removing an insulation material and related methods

(Object) To provide a new electronic parts cleaning solution that inhibits the corrosion of silicon or metals other than the silicon, and that efficiently cleans off fine dust or organic matters adhered on the surface of electronic parts, and that does not have white turbidity easily. (Solution) An electronic parts clearing solution which is characterized in containing an anionic surfactant, hydroxide, metal corrosion inhibitor, water, and a nonionic surfactant represented by formula (I) and/or a nonionic surfactant represented by formula (II):HO-((EO)&#x2014;(PO))&#x2014;H&#x2003;&#x2003;(I)R-[((EO)&#x2014;(PO))&#x2014;H]&#x2003;&#x2003;(II) (EO is an oxyethylene group, and PO is an oxypropylene group. x and y, and a and b are positive number, which x(x+y) and a(a+b) are 0.05 to 0.5 respectively, and z and c are positive integers. R is a residue group wherein hydrogen atoms are removed from hydroxyl group of alcohol or amine represented by a group having valency of 1&#x2dc;4).

Electronic parts cleaning solution

A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator:CH&#x2014;(CH)&#x2014;O&#x2014;(CHO)&#x2014;X &#x2003;&#x2003;(1)wherein l, m and n independently represent a positive number, and X represents a hydrogen atom or a hydrocarbon group;CH&#x2014;(CH)&#x2014;O&#x2014;(CHO)&#x2014;(CHO)&#x2014;X &#x2003;&#x2003;(2)wherein a, b, d, x and y independently represent a positive number, b and x are different, and X represents a hydrogen atom or a hydrocarbon group.

Cleaning solution for semiconductor substrate

Recently, use is made of copper wiring as the wiring material for semiconductor devices, and of low dielectric constant films as the insulating film between the lines of wiring. In this connection, a photoresist stripper is in need which can inhibit corrosion or damage on the copper wiring or the Low-k film, and which has excellent property of removing ashed photoresist residues. The invention provides a photoresist stripper (hereinafter, referred to as the stripper of the invention) characterized in containing a tertiary amine compound, an alkaline compound, a fluoro compound, and an anionic surfactant; and a process for preparation of semiconductor devices using the stripper of the invention.

Photoresist stripper

Growing community of inventors

Osaka, Japan

Masayuki Takashima