Shin-Etsu Chemical Co., Ltd.

Masayuki Suzuki

Satoshi Okazaki

Ichiro Kaneko

Tamotsu Maruyama

Jiro Moriya

A phase shift mask blank comprising a transparent substrate and at least one layer of a phase shifter thereon, wherein the phase shifter is a film composed primarily of a fluorine-doped metal silicide, can be fabricated into a high-performance phase shift mask having adequate transmittance and good stability over time even when used with light sources that emit short-wavelength light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.

Growing community of inventors

Nakakubiki-gun, Japan

Masayuki Suzuki