Fuji Electric Co., Ltd.

Fuji Electric Device Technology Co., Ltd.

Masayuki Soutome

Eiji Mochizuki

Rikihiro Maruyama

Yoshihiro Kodaira

Kazunaga Onishi

Shinji Sano

Osamu Ikawa

Norio Arikawa

Masahiro Kikuchi

Takeshi Yokoyama

Kazuya Adachi

Yoshinori Uezato

Tomoaki Goto

Masaoki Miyakoshi

Syuuji Miyashita

A member for semiconductor device includes a metal portion configured to be bonded to another member by solder, and a treated coating covering a surface of the metal portion, the treated coating including a treatment agent. The treated coating vaporizes at a temperature lower than or equal to a solidus temperature of the solder.

Member for semiconductor device

A semiconductor device includes: a multilayer substrate which includes a circuit board and an insulating plate on which the circuit board is formed; and a contact part having a cylindrical hollow hole therein and an open end bonded to a bonding area on the front surface of the circuit board via bonding material. In the case of this semiconductor device, wettability of a contact area of the contact part with respect to the bonding material is approximately equal to wettability of at least the bonding area of the circuit board with respect to the bonding material. Thus, the rising of the bonding material into the hollow hole of the contact part during heating performed when the contact part is bonded to the circuit board is reduced.

Semiconductor device having circuit board to which contact part is bonded

A semiconductor module radiator plate fabrication method includes soldering a plurality of insulating substrates of different shapes to a flat radiator plate, and forming a convex curve on an insulating substrate side of the radiator plate; obtaining a first concave curve by reversing the convex curve; setting a second concave curve on an insulating substrate side of a radiator plate after soldering, a bottom of the second concave curve being positioned under clearance between the plurality of insulating substrates; adding the first curve and the second curve to calculate a third concave curve on the insulating substrate side; and forming the third curve on a flat plate to form a radiator plate before soldering.

Semiconductor module radiator plate fabrication method, radiator plate, and semiconductor module using the same

There is provided a method for producing a member for semiconductor device which can reduce generation of a large number of voids in a solder-bonded portion without increasing production cost. The method includes the step of preparing a first member including a metal portion capable of being bonded by solder and the step of coating the surface of the metal portion of the first member with a treatment agent to form a treated coating which vaporizes at a temperature lower than or equal to the solidus temperature of the solder.

Method for producing member for semiconductor device and semiconductor device, and member for semiconductor device

A power semiconductor module and a method of manufacture thereof includes lead a frame carrying lead having inner and outer lead portions. The outer lead portions, which are connected by soldering to semiconductor chips simultaneously, eliminate the need for using bonding wires. Since no bonding wire is used for connecting the leads and the semiconductor chips, a sufficient current capacity is obtained. The bonding between an insulating circuit board and the semiconductor chips and the bonding between the semiconductor chips and the leads can be made simultaneously in a single step of reflow-soldering. As a result, the mounting time can be shortened and the power semiconductor module can be manufactured more efficiently.

Power semiconductor module and method of manufacturing the same

A power semiconductor module and a method of manufacture thereof includes a lead frame carrying lead having inner and outer lead portions. The outer lead portions, which are connected by soldering to semiconductor chips simultaneously, eliminate the need for using bonding wires. Since no bonding wire is used for connecting the leads and the semiconductor chips, a sufficient current capacity is obtained. The bonding between an insulating circuit board and the semiconductor chips and the bonding between the semiconductor chips and the leads can be made simultaneously in a single step of reflow-soldering. As a result, the mounting time can be shortened and the power semiconductor module can be manufactured more efficiently.

Growing community of inventors

Matsumoto, Japan

Masayuki Soutome