Sanyo Electric Co., Ltd.

Sanyo Electric Oc., Ltd.

Masayuki Shono

Yasuyuki Bessho

Shoji Honda

Masayuki Hata

Yasuhiko Nomura

Takao Yamaguchi

Nobuhiko Hayashi

Ryoji Hiroyama

Hiroki Hamada

Akira Ibaraki

Keiichi Yodoshi

Takenori Goto

Koutarou Furusawa

Takatoshi Ikegami

Yoichi Tsuchiya

Daisuke Ide

Mitsuaki Matsumoto

Kazushi Mori

Toru Ishikawa

Toyozo Nishida

Teruaki Miyake

Kenichi Matsukawa

Atushi Tajiri

Yuji Hamada

Kenji Nagatomi

Takashi Kano

Tsutomu Yamaguchi

Hiroki Ohbo

Hiroaki Izu

Atsushi Tajiri

Minoru Sawada

Yasuaki Inoue

Yasuhiko Matsushita

Takahiro Uetani

Hiroyuki Kase

Hitoshi Hirano

Seiji Kajiyama

Kiyoshi Oota

Shingo Kameyama

Koji Tominaga

Yasuhiro Ueda

Kouji Komeda

Junko Suzuki

Koji Komeda

Keiji Tanaka

A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

Semiconductor laser device and method of fabricating the same

A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a &#x3bb;/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatus

A light-emitting device, having high light extraction efficiency, capable of obtaining diffused light is obtained. This light-emitting device comprises a light-emitting diode, a portion, formed on a plane substantially parallel to a light-emitting surface of the light-emitting diode, having a dielectric constant periodically modulated with respect to the in-plane direction of the plane substantially parallel to the light-emitting surface and a member provided on the side of the light-emitting surface of the light-emitting diode for diffusing light emitted from the light-emitting diode.

Light-emitting device and illuminator

A one-chip semiconductor laser device for use in a semiconductor laser apparatus has a structure in which a red semiconductor laser device and an infrared semiconductor laser device are stacked on a blue-violet semiconductor laser device. The blue-violet semiconductor laser device is manufactured by forming semiconductor layers on a GaN substrate. Each of the red semiconductor laser device and the infrared semiconductor laser device is manufactured by forming semiconductor layers on a GaAs substrate. The modulus of elasticity of GaAs is smaller than the modulus of elasticity of GaN. The length of each of the red semiconductor laser device and the infrared semiconductor laser device is longer than the length of the blue-violet semiconductor laser device.

Semiconductor laser apparatus and manufacturing method thereof

A blue-violet emission point, an infrared emission point, and a red emission point in a semiconductor laser apparatus are arranged so as to be arranged in this order on a substantially straight line along a first direction. A blue-violet laser beam emitted from the blue-violet emission point and a red laser beam emitted from the red emission point are incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a &#x3bb;/4 plate, an objective lens, a cylindrical lens, and an optical disk, is returned from the optical disk, and is introduced into an photodetector. The infrared laser beam emitted from the infrared emission point is incident on the optical disk by the optical system, is returned from the optical disk, and is introduced into the photodetector.

Semiconductor laser apparatus and optical pickup apparatus

The present invention provides a wave plate capable of obtaining preferable phase conversion characteristic over a wide wavelength range. The wave plate includes an aluminum oxide film having linear grating groove patterns. The period L (&#x3bc;m) and the duty ratio De of the grating groove patterns are set at values within the first range specified by the following four formulas:L&#x2266;0.65&#x2267;2&#xd7;10&#x2266;6.0317&#x2212;10.3525.0516(&#x2212;0.85)/0.44+(&#x2212;0.41)/0.39&#x2266;1

Wave plate and optical device using the same

A light-emitting device with a built-in microlens having a microlens integrated with a semiconductor light-emitting device causing no misalignment of an optical axis is provided. This light-emitting device with a built-in microlens comprises a semiconductor light-emitting device and a microlens, integrated with the semiconductor light-emitting device, formed through light emitted from the semiconductor light-emitting device. Thus, the optical axis of the microlens is automatically aligned in formation of the microlens.

Light-emitting device with built-in microlens and method of forming the same

A second cladding layer composed of p-AlGaN and a second contact layer composed of p-GaN are formed in this order on a light emitting layer composed of a nitride based semiconductor. A predetermined region of the second cladding layer and the second contact layer is removed, to form a ridge portion. A high-resistive current blocking layer, to which impurities have been added, is formed on an upper surface of a flat portion of the second cladding layer, which remains without being removed, and on both sidewalls of the ridge portion.

Semiconductor light emitting device

A six-segment holographic surface is divided into regions by dividing lines. A four-segment photodetection part is divided into four photodetection parts equal in area by a section line substantially parallel to the radial direction of an optical disk and a section line orthogonal thereto. A main light beam diffracted in the regions of the six-segment holographic surface are condensed as spots at positions apart from each other on opposite sides on a section line of the four photodetection parts, and the main beam diffracted in the regions is condensed as spots in the center of the photodetection parts of the four-segment photodetection part.

Optical pickup with a diffraction element consist of six regions providing spatial variation corresponding to a focas state

An SiNfilm is formed on partial side surfaces and an electrode forming surface excluding an n-side electrode of a first contact layer, the side surfaces of each layer, the upper surface of a second cladding layer and the side surfaces of a ridge portion. An SiOfilm is formed on the SiNfilm. The SiNfilm and the SiOfilm form a dielectric film.

In an organic electroluminescent device constructed by providing at least an emitting layer and a carrier transport layer using an organic material between a hole injection electrode and an electron injection electrode, at least one of the emitting layer and the carrier transport layer contains a chelate compound of a chromone derivative with zinc or aluminum, a chelate compound of a 3-hydroxyflavone derivative with a metal, a chelate compound composed of an 8-quinolinol derivative dimer and another ligant which are coordinated to a metal, or a chelate compound composed of two 8-quinolinol derivatives coordinated to a metal and one halogen bonded thereto.

Organic electroluminescent device

Growing community of inventors

Hirakata, Japan

Masayuki Shono