Shin-etsu Handotai Co., Ltd.

Masayuki Shinohara

Masataka Watanabe

Tsuneyuki Kaise

Masato Yamada

Masahisa Endo

Masahisa Endou

Akio Nakamura

Masanobu Takahashi

Fumitaka Kume

Jun Ikeda

Tohru Takahashi

Keizou Adomi

A Metal Organic Vapor Phase Epitaxy step of growing a light emitting layer sectioncomposed of a first Group III-V compound semiconductor, epitaxially on a single crystal growth substrateby Metal Organic Vapor Phase Epitaxy, and a Hydride Vapor Phase Epitaxial Growth step of growing a current spreading layeron the light emitting layer sectionepitaxially by Hydride Vapor Phase Epitaxial Growth Method, are conducted in this order. Then, the current spreading layeris grown, having a low-rate growth layerpositioned close to the light emitting layer side and then a high-rate growth layerhaving a growth rate of the low-rate growth layerlower than that of the high-rate growth layerso as to provide a method of fabricating a light emitting device capable of preventing hillock occurrence while forming the thick current spreading layer.

Method of fabricating light emitting device and compound semiconductor wafer and light emitting device

Disclosed is a light-emitting device () has a light-emitting layer portion () which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer () with a thickness of not less than 40 &#x3bc;m which is formed on at least one major surface side of the light-emitting layer portion () and composed of a group III-V compound semiconductor having a band gap energy larger than the photon energy equivalent of the peak wavelength of emission flux from the light-emitting layer portion (). The transparent thick-film semiconductor layer () has a lateral surface portion (S) which is a chemically etched surface. The dopant concentration of the transparent thick-film semiconductor layer () is not less than 5&#xd7;10/cmand not more than 2&#xd7;10/cm. The light-emitting device can have a transparent thick-film semiconductor layer while being significantly improved in light taking-out efficiency from the lateral surface portion.

Light emitting device and method of fabricating the same

In the fabricating of a light emitting device, a light emitting layer portionand a current spreading layerrespectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emitting layer portionis formed by a metal organic vapor-phase epitaxy process, and the current spreading layer, on such light emitting layer portion, is formed to have conductivity type of n-type by a hydride vapor-phase epitaxy process.

Method of fabricating a light emitting device, and light emitting device

A GaAsP-base light emitting element capable of sustaining an excellent light emission property for a long period, and a method for manufacturing thereof are provided. The light emitting element has a p-n junction interface responsible for light emission formed between a p-type GaAs P layer and an n-type GaAs P layer , and has a nitrogen-doped zone formed in a portion including the p-n junction interface between such p-type GaAs P layer and n-type GaAs P layer . Such element can be manufactured by fabricating a plurality of light emitting elements by varying nitrogen concentration Y of the nitrogen-doped zone while keeping a mixed crystal ratio a of the p-type GaAs P layer and n-type GaAs P layer constant; finding an emission luminance/nitrogen concentration relationship by measuring emission luminance of the individual light emitting elements; and adjusting the nitrogen concentration of the nitrogen-doped zone so as to fall within a range from 1.05Y to 1.5Y , where Y is defined as a peak nitrogen concentration whereat the emission luminance of the light emitting element will become maximum at a mixed crystal ratio a.

Light emitting element and method for manufacturing thereof

In the light emitting device having, a light emitting layer portion and a current spreading layer, respectively composed of a Group III-V compound semiconductor, formed on a single crystal substrate, the light emitting layer portion is formed on the single crystal substrate by the metal organic vapor-phase epitaxy process, and on such light emitting layer portion the current spreading layer is formed by the hydride vapor-phase epitaxy process. A high-concentration doped layer is also formed in a surficial area including the main surface on the electrode forming side of the current spreading layer, so as to have a carrier concentration of p-type dopant higher than that in the residual portion of the current spreading layer. A current blocking layer which comprises a Group III-V compound semiconductor having a conductivity type different from that of the current spreading layer is formed in the midway in the thickness-wise direction of the current spreading layer as being buried therein At least a portion of the current spreading layer covering the current blocking layer on the electrode side is formed by the hydride vapor-phase epitaxy process (the second vapor-phase growth step). The current spreading layer is composed of GaAs P (0.5&lE;a&lE;0.9). An off-angled substrate is available as the single crystal substrate.

Method of fabricating a light emitting device and light emitting device

Method for fabricating compound semiconductor epitaxial wafer and vapor phase growth apparatus using the same

A method for manufacturing compound semiconductor epitaxial wafer allowing sharp changes in alloy composition and growth of high-quality epitaxial layers. In a process for epitaxially growing a gallium arsenide phosphide GaAs,P,alloy composition gradient layer,on a compound semiconductor single-crystalline substrate made of gallium phosphide GaP or gallium arsenide GaAs, one group V gas as a source for the group V element not composing the single-crystalline substrate is varied in its supply volume in at least one cycle of sharp increase/moderate decrease, while the other group V gas as a source for the group V element composing the single-crystalline substrate is moderately decreased, thereby achieving at least one cycle of sharp increase/moderate decrease of a product of partial pressures of the group III and group V gases so that at least one set of an increasing zone and a decreasing zone of the alloy composition is formed within the gallium arsenide phosphide GaAs,P,alloy composition gradient layer

Method for manufacturing compound semiconductor epitaxial wafer

Compound semiconductor epitaxial wafer

A compound semiconductor epitaxial wafer added with nitrogen to provide a high luminous efficiency. Epitaxial layers are grown on a single crystalline substrate 4 made of gallium phosphide or gallium arsenide to form a compound semiconductor epitaxial wafer EW. The epitaxial layers include at least an nitrogen-added gallium phosphide arsenide mixed crystalline epitaxial layer having an n-type carrier concentration descending gradually toward the uppermost surface of the grown layer in a continuous or stepwise manner before p-type impurity is diffused, and contain an intermediate layer 83 with an n-type carrier concentration of 4.times.10.sup.14 /cm.sup.3 or more and less than 3.5.times.10.sup.15 /cm.sup.3, and a surface layer 84 having an n-type carrier concentration equals to or lower than that for the intermediate layer 83.

A method for a vapor-phase growth of a GaAs.sub.1-x P.sub.x epitaxial layer having a uniform thickness is disclosed. This method allows the GaAs.sub.1-x P.sub.x epitaxial layer (wherein x stands for an alloy composition satisfying the expression, 0.ltoreq.x.ltoreq.1) to be formed on a plurality of semiconductor single crystal substrates 1 by setting the semiconductor single crystal substrates 1 in place on a wafer holder 16 disposed inside a vapor-phase growth apparatus 30 in an amount of not less than 70% as the covering ratio of the total surface area of the substrates to the surface area of the wafer holder 16.

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Annaka, Japan

Masayuki Shinohara