Nichia Chemical Industries, Limited

Nichia Corporation

Masayuki Senoh

Shuji Nakamura

Motokazu Yamada

Takao Yamada

Kanji Bando

Shinichi Nagahama

Naruhito Iwasa

Akiyoshi Kinouchi

Masanao Ochiai

Yoshihiko Furukawa

Makoto Shimada

A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Nitride semiconductor light-emitting devices

Superlattice nitride semiconductor LD device

A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Gallium nitride based III-V group compound semiconductor device and method of producing the same

Nitride semiconductor device

A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

A semiconductor laser device have, on a substrate, a semiconductor layer including an active layer sandwiched between an n-type layer and a p-type layer, the semiconductor layer having a sonator face formed by etching and a projection projecting out in an emission direction relatively to the resonator face, wherein a protective film is formed to extend from the resonator face to an end face of the projection, and, an emission critical angle, which is the largest angle at which light emitted from the resonator face can be radiated without being blocked by the projection and the protective film formed on the projection, is larger than an emission half-angle of an emission distribution in a vertical direction of a laser beam emitted from the resonator face.

Semiconductor laser device and its manufacturing method

Gallium nitride-based III-V group compound semiconductor

Gallium nitride-based III-V group compound semiconductor device and method of producing the same

Nitride semiconductor light-emitting and light-receiving devices

Growing community of inventors

Anan, Japan

Masayuki Senoh