Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Masayuki Sakakura

Shunpei Yamazaki

Junichiro Sakata

Yoshiaki Oikawa

Hongyong Zhang

Kengo Akimoto

Satoshi Murakami

Masashi Tsubuku

Akiharu Miyanaga

Miyuki Hosoba

Kenichi Okazaki

Hotaka Maruyama

Aya Anzai

Hideomi Suzawa

Hideyuki Kishida

Kaoru Tsuchiya

Hideaki Kuwabara

Hideto Ohnuma

Masaharu Nagai

Ritsuko Nagao

Toru Takayama

Yoshifumi Tanada

Takuya Hirohashi

Mitsuaki Osame

Masahiro Takahashi

Yutaka Matsuda

Hiroyuki Miyake

Hiromichi Godo

Tomoaki Atsumi

Tamae Takano

Noriko Miyagi

Ryosuke Watanabe

Junichi Koezuka

Yuugo Goto

Tatsuya Arao

Yu Yamazaki

Ryoji Nomura

Yoshitaka Yamamoto

Yoshinobu Asami

Daisuke Kurosaki

Yosuke Tsukamoto

Yasuyuki Arai

Yukinori Shima

Tetsuhiro Tanaka

Motomu Kurata

Mitsuhiro Ichijo

Takeshi Noda

Takuya Matsuo

Takashi Ohtsuki

Yoshiyuki Kurokawa

Kiyoshi Kato

Hisao Ikeda

Masami Jintyou

Yasutaka Nakazawa

Motoki Nakashima

Tetsunori Maruyama

Yuki Imoto

Kosei Noda

Tetsuji Yamaguchi

Gen Fujii

Takashi Hamada

Yasumasa Yamane

Kazuya Hanaoka

Shigeki Komori

Yuhei Sato

Tomoya Futamura

Masatoshi Yokoyama

Shuhei Takahashi

Osamu Nakamura

Hiroki Ohara

Daisuke Matsubayashi

Takashi Shimazu

Hidehito Kitakado

Hirokazu Yamagata

Shinpei Matsuda

Ryo Tokumaru

Tsutomu Murakawa

Kazuaki Ohshima

Hiroshi Matsukizono

Misako Nakazawa

Yuko Tachimura

Keiko Saito

Jun Koyama

Yoshiharu Hirakata

Hisashi Ohtani

Yoshiyuki Kobayashi

Takeshi Nishi

Shuhei Nagatsuka

Yuta Endo

Akihiro Chida

Kaoru Hatano

Tetsuya Kakehata

Atsushi Hirose

Naoto Yamade

Masahiro Katayama

Shigeyasu Mori

Tomokazu Yokoi

Takaaki Nagata

Aya Miyazaki

Koji Moriya

The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Semiconductor device and manufacturing method thereof

A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part of a surface of the stack. The third oxide semiconductor layer includes a first layer in contact with the stack and a second layer over the first layer. The first layer includes a microcrystalline layer, and the second layer includes a crystalline layer in which c-axes are aligned in a direction perpendicular to a surface of the first layer.

Semiconductor device

A semiconductor device that is suitable for miniaturization and higher density is provided. A semiconductor device includes a first transistor over a semiconductor substrate, a second transistor including an oxide semiconductor over the first transistor, and a capacitor over the second transistor. The capacitor includes a first conductor, a second conductor, and an insulator. The second conductor covers a side surface of the first conductor with an insulator provided therebetween.

The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Semiconductor device having specified relative material concentration between In—Ga—Zn—O films

An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Display device and method for manufacturing the same

A transistor with small parasitic capacitance can be provided. A transistor with high frequency characteristics can be provided. A semiconductor device including the transistor can be provided. Provided is a transistor including an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor has a first region where the first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween; a second region where the first conductor overlaps with the second conductor with the first and second insulators positioned therebetween; and a third region where the first conductor overlaps with the third conductor with the first and second insulators positioned therebetween. The oxide semiconductor including a fourth region where the oxide semiconductor is in contact with the second conductor; and a fifth region where the oxide semiconductor is in contact with the third conductor.

Transistor and semiconductor device

A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.

An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Light-emitting device and method for manufacturing the same

It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

Semiconductor device and method for manufacturing the same

Semiconductor device having specified relative material concentration between In&#x2014;Ga&#x2014;Zn&#x2014;O films

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Kanagawa, Japan

Masayuki Sakakura