Kabushiki Kaisha Toshiba

Masayuki Onuma

Hiroshi Yamaguchi

Hiroyuki Hasebe

Masahiro Sekino

Kaoru Koiwa

Asako Satoh

Mitsuhiro Tomita

Masahiko Yoshiki

Masayuki Oguchi

Masaru Hayashi

Hideki Matsunaga

Fuminobu Tezuka

Masashi Fujiwara

Nao Shimura

Yuki Tomioka

Shoji Kozuka

Seizou Doi

Motonaka Yabuki

Disclosed is a nonaqueous electrolyte secondary battery, comprising a case having a wall thickness not larger than 0.3 mm, a positive electrode provided in the case, a negative electrode provided in the case and the negative electrode containing a carbonaceous material capable of absorbing-desorbing lithium ions, and a nonaqueous electrolyte provided in the case and the nonaqueous electrolyte containing a nonaqueous solvent including &#x3b3;-butyrolactone and a solute dissolved in the nonaqueous solvent, wherein after being discharged to 3V with a current of 0.2 C at room temperature, the voltage reduction caused by the self-discharge at 60&#xb0; C. is not larger than 1.5V in 3 weeks.

Nonaqueous electrolyte secondary battery having a carbonaceous material containing negative electrode and a nonaqueous electrolyte containing a nonaqueous solvent

Disclosed is a method of recovering lithium from a battery containing lithium such as a lithium ion secondary battery. The lithium-containing member of the battery is dissolved with an acidic liquid, and an alkaline material is added to the obtained lithium solution to transform a transition metal which may be dissolved in the lithium solution into a metal hydroxide precipitation, whereby the metal hydroxide precipitate is separated from the lithium solution. The lithium solution is then dried to obtain a solid containing the lithium, and the lithium is eluted from the solid with a non-aqueous solvent. Retrieving lithium from the lithium eluate is accomplished by use of a cation exchanger.

Method of recovering lithium from batteries

The invention provides a method for concentrating impurity contained in a semiconductor crystal sample 11 by irradiating repeatedly a specified position of the semiconductor crystal sample 11 with a laser beam having a specified intensity by means of a laser oscillator 13. Then the invention provides a method for analyzing impurity contained in the impurity concentrated area of the semiconductor crystal sample 11 in high sensitivity by means of a specified physical analyzing means. According to demand, a method of the invention concentrates impurity by means of a laser beam after forming an insulating film such as an oxide film and the like transparent to the laser beam on the surface of the semiconductor crystal sample. At the same time, the invention provides a concentrator and an analyzer to be used for these concentrating method and analyzing method.

Impurity concentrator and analyzer

Growing community of inventors

Kanagawa, Japan

Masayuki Onuma