Sharp Kabushiki Kaisha Corporation

Masayuki Ohta

Atsushi Yamashita

Masatsugu Masuda

Toyonori Uemura

Masanobu Okano

Tomoshi Kimura

Masahiro Konishi

Shinji Yamaguchi

Yoshiki Sota

Kazuo Tamaki

Masaki Tatsumi

Takanobu Matsuo

Shin Ito

Shinji Kaneiwa

Toshiyuki Kawakami

Shin Itoh

Masamichi Harada

Yasuji Takenaka

Noboru Oshima

Yutaka Okada

Yoshinori Ohitsu

Satofumi Kinei

Takahiro Hashimoto

Ryota Kawamura

Yoshifumi Inada

Hiroyuki Tsujii

A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.

Semiconductor laser device, manufacturing method thereof, and light emitting device

A light emitting device which emits a secondary light with high color purity and has a fast response speed is obtained. A KSF phosphor () which absorbs a part of blue light and emits red light and a CASN phosphor () are distributed in a resin () which seals an LED chip () which emits the blue light. The KSF phosphor () absorbs the blue light and emits the red light by forbidden transition, and the CASN phosphor () absorbs the blue light and emits the red light by allowed transition.

Light emitting device that emits secondary light with a fast response

A light emitting device includes: a substrate having a main surface; a phosphor layer provided on the main surface and containing an LED element that emits primary light and a fluorescent particle that absorbs a part of the primary light and emits secondary light; and a transparent resin layer having a refractive index n and covering the phosphor layer. The transparent resin layer has an outer circumferential surface that forms a boundary between the transparent resin layer and the atmosphere. When a minimum circumference that includes the overall phosphor layer and is concentric with the outer circumferential surface has a radius r in a cut surface where at least a part of the outer circumferential surface takes a shape of an arc having a radius R, a relationship of R&#x3e;r&#xb7;n is satisfied. With such configuration, the light extraction efficiency is enhanced.

Light emitting device, surface light source, liquid crystal display device, and method for manufacturing light emitting device

Light emitting device and illumination device

Improves light extraction efficiency. A light emitting deviceusing a white resin molding packageintegrally molded with lead framesconstituting an electrode corresponding to one or a plurality of light emitting elementand white resin, wherein an area in a plane view of a white resin surface on a reflective surface that is level with amounting surface of the light emitting elementis configured to be larger than total area in a plane view occupied by surfaces of the lead framesand the light emitting element. Further, a step section is formed on the surfaces of lead frames, white resin is filled in the step section, and the area of white resin surface on a reflective surface where the light emitting elementis mounted is increased.

Light-emitting device with reflective resin

A semiconductor apparatus according to the present invention with a semiconductor element implemented on an insulated substrate comprises: a substrate front surface electrode formed on a front surface side of the insulated substrate and connected with an element electrode of the semiconductor element; a substrate back surface electrode formed on a back surface side of the insulated substrate and electrically connected with the substrate front surface electrode; and a plurality of connection electrodes, extending in a thickness direction of the insulated substrate from one side to the other side of a front surface and a back surface thereof, for electrically connecting the substrate front surface electrode with the substrate back surface electrode, where the substrate front surface electrode or the substrate back surface electrode is formed to have a plane pattern separated for each of the plurality of connection electrodes.

Semiconductor apparatus, inspection method thereof and electric device

A light emitting apparatus is provided, and the light emitting apparatus has a light emitting device mounted on a substrate or a resin package where a substrate surface or the resin package is resin-encapsulated by an encapsulating resin section added with a phosphor in such a manner to cover the light emitting device. A surface resin layer of a different color from that of the encapsulating resin section is provided on a surface side of the encapsulating resin section.

Light emitting apparatus, method for manufacturing the light emitting apparatus, electronic device and cell phone device

There is provided a light emitting device which makes it possible to reduce optical loss and improve brightness by increasing a ratio of fluorescent light that is not reabsorbed by a light emitting element while decreasing a ratio of scattered light that is reabsorbed by the light emitting element. Individual faces forming outer faces of the light emitting elementare in contact with a bonding memberor sealing member. The bonding memberand the sealing membercontain a fluorophor. Emitted light emitted from the faces of the light emitting elementis transformed into fluorescent light by the fluorophor. Therefore, the ratio of scattered light that is not transformed from the emitted light into the fluorescent light can be decreased while the ratio of fluorescent light is increased.

Light emitting device

A semiconductor laser element comprising: a clad layer of a first conductivity type; an active layer; a first clad layer of a second conductivity type; a ridge made of a second clad layer of the second conductivity type and a cap layer of the second conductivity type, which are layered on the first clad layer of the second conductivity type, in this order starting from the first clad layer side; a dielectric film formed on ridge sides other than a top portion of the ridge; and a metal electrode layer that covers the ridge, wherein the width of the bottom of the cap layer and the width of the top surface of the second clad layer are approximately equal.

Semiconductor laser element and manufacturing method for the same

A semiconductor laser element that has window regions at its opposite end faces and an electrode portion superposed on an inner portion of the upper surface thereof to include covering an inner portion of the upper surfaces of the window regions without covering the entire upper surfaces of the window regions, by aligning a photomask for forming electrode pattern segments at a predetermined position over a laser substrate, which includes a plurality of element regions in a matrix pattern and a plurality of window region pattern stripes corresponding to the window regions of the element regions, the electrode pattern segments being used for forming electrodes at predetermined positions between the adjacent window region pattern stripes, wherein the photomask includes: an electrode pattern region for forming the electrode pattern segments; and an auxiliary mask having a scale section for measuring the amount of alignment deviation of the electrode pattern segments with respect to the window region pattern.

Semiconductor laser element produced by aligning a photomask to pattern an electrode portion superposed on inner portions of upper surfaces of window regions at opposite end faces

A method with which all semiconductor lasers can be used as products is provided by regulating reflectance variations of all the semiconductor laser end faces arranged in an electron beam deposition apparatus after completion of deposition to a predetermined range when semiconductor laser end faces are coated. An end face ( ) that is placed at a position at which the film thickness is made relatively thicker than those of other coat batches due to the large flux of a deposition beam is inclined by an angle &bgr; to adjust the incident angle of the deposition beam. The relationship, actual film thickness ( )&equals;film thickness ( ) in direction of deposition beams central axis ( )&times;cos &bgr;, is utilized to reduce the film thickness of the end face ( ) to the predetermined range.

Growing community of inventors

Osaka, Japan

Masayuki Ohta