Fuji Xerox Co., Ltd.

Masayuki Nishikawa

Shigeru Yagi

Yuzuru Fukuda

Noriyoshi Takahashi

Masato Ono

Ken-ichi Karakida

Kenichi Karakida

Yumiko Komori

Te Nam Roh

Yasuo Sakaguchi

Fumio Ojima

Takeshi Iwanaga

Hidemi Nukada

Taketoshi Hoshizaki

Nobuyuki Torigoe

Kohichi Yamamoto

Masaki Yokoi

Masahito Tokuhiro

Katsumi Nukada

Akira Imai

Hirofumi Nakamura

Katsumi Daimon

Kiyokazu Mashimo

Toru Ishii

Ryosaku Igarashi

Masakazu Iijima

Kazuyuki Nakamura

Kazuhiro Koseki

Daisuke Haruyama

Kazuo Yamasaki

Susumu Honma

Michiaki Takahashi

Tetsuya Ezumi

The present invention provides an electrophotographic photoreceptor having at least a photosensitive layer and a surface layer provided at a surface of the photosensitive layer. The surface layer contains a first layer which is provided at the photosensitive layer side and has a refractive index of n1 and a second layer which is provided at the opposite side of the first layer to the photosensitive layer and has a refractive index of n2. The refractive index of the photosensitive layer, the refractive index of the first layer, the refractive index of the second layer, the film thickness of the first layer, an integer of 0 or more, and the wavelength of light with which the surface of the photoreceptor is irradiated when an electrostatic latent image is formed satisfy specific relationships.

Electrophotographic photoreceptor, and image forming apparatus and process cartridge using the same

An electrophotographic photoreceptor includes a conductive support; a photosensitive layer; and a surface protective layer as an outermost layer of the electrophotographic photoreceptor, wherein the electrophotographic photoreceptor satisfies following formulas (a) and (b):3.6&#x2266;()/&#xd7;100&#x2266;6&#x2003;&#x2003;(a)B&#x2266;0.3&#x2003;&#x2003;(b) wherein A (&#x3bc;m) represents a ten-point-averaged surface roughness Rof the conductive support, B (&#x3bc;m) represents a ten-point-averaged surface roughness Rof the surface protective layer, and C (%) represents a reflectivity of the surface protective layer against the conductive support.

Electrophotographic photoreceptor, process cartridge and image forming apparatus

An electrophotographic photoreceptor includes a conductive substrate, and a photosensitive layer, an intermediate layer having a thickness of 2 nm to 70 nm, and a surface layer, which are disposed in this order on the conductive substrate. The refractive index n1 of the photosensitive layer, the refractive index n2 of the intermediate layer, and the refractive index n3 of the surface layer satisfy an inequality, n2&#x3e;n3&#x3e;n1.

A novel titanyl phthalocyanine crystal, a photoconductive material comprising the same, and an electrophotographic photoreceptor using the same are disclosed. The titanyl phthalocyanine crystal has a primary particle diameter ranging from 0.03 to 0.15 &mgr;m, shows a maximum X-ray diffraction peak at a Bragg angle (2&thgr;&plusmn;0.2&deg;) of 27.3&deg;, has a ellipsoidal tabular form, and has a BET specific surface area of not less than 35 m,/g. The crystal has improved crystal form stability against solvents and holds its crystal form for an extended period of time in a dispersed and coated state. An electrophotographic photoreceptor using the crystal as a photoconductive material is excellent in sensitivity, stability, and durability.

Titanyl phthalocyanine crystal and electrophotographic photoreceptor using the same

A process for producing an electrophotographic photoreceptor comprising the steps of forming a photoconductive layer on a conductive substrate in a reaction chamber, and after the photoconductive layer is formed, forming a surface protection layer on the photoconductive layer by introducing into the reaction chamber a gaseous mixture comprising (i) a first component, fluorohydrocarbon gas, and (ii) a second component silicon, hydride gas, or a hydrocarbon gas and/or hydrogen gas and decomposing the gaseous mixture by glow discharge, wherein the surface protection layer thus formed comprises amorphous silicon carbide when the second component is a silicon hydride gas or amorphous carbon when the second component is a hydrocarbon gas and/or hydrogen gas. The surface protection layer exhibits sufficient hardness to protect the photoconductive layer from frictional scratches and other related damage.

Process for making an electrophotographic photoreceptor having

A novel titanyl phthalocyanine crystal, a photoconductive material comprising the same, and an electrophotographic photoreceptor using the same are disclosed. The titanyl phthalocyanine crystal has a primary particle diameter ranging from 0.03 to 0.15 .mu.m, shows a maximum X-ray diffraction peak at a Bragg angle (2.theta..+-.0.2.degree.) of 27.3.degree., has a ellipsoidal tabular form, and has a BET specific surface area of not less than 35 m.sup.2 /g. The crystal has improved crystal form stability against solvents and holds its crystal form for an extended period of time in a dispersed and coated state. An electrophotographic photoreceptor using the crystal as a photoconductive material is excellent in sensitivity, stability, and durability.

Titanyl phthalocyanine crystal

Crystals of hydroxygallium phthalocyanine, a method of preparing the crystals, a photoconductive material containing the crystals, and an electrophotographic photoreceptor having the material. The photoreceptor has excellent electrophotographic characteristics. The crystals of hydroxygallium phthalocyanine have distinct diffraction peaks at (i) 7.5.degree., 9.9.degree., 12.5.degree., 16.3.degree., 18.6.degree., 25.1.degree. and 28.3.degree., or (ii) 7.7.degree., 16.5.degree., 25.1.degree. and 26.6.degree., or (iii) 7.9.degree., 16.5.degree., 24.4.degree. and 27.6.degree., or (iv) 7.0.degree., 7.5.degree., 10.5.degree., 11.7.degree., 12.7.degree., 17.3.degree., 18.1.degree., 24.5.degree., 26.2.degree. and 27.1.degree., or (v) 6.8.degree., 12.8.degree., 15.8.degree. and 26.0.degree. or (vi) 7.4.degree., 9.9.degree., 25.0.degree., 26.0.degree., and 28.2.degree. of the Bragg angle (2.theta..+-.0.2) in the X-ray diffraction spectrum. The electrophotographic photoreceptor has a light-sensitive layer containing the photoconductive material of the crystals.

Electrophotographic photoreceptor

An electrophotographic photoreceptor having excellent dark resistance is disclosed, which comprises a photoconductive layer and a surface layer formed successively on a conductive substrate, wherein the photoconductive layer mainly comprises hydrogen-containing amorphous silicon, and the surface layer comprises amorphous carbon which contains not more than 50 atomic percent of hydrogen.

Electrophotographic photoreceptor having conductive layer and amorphous

An electrophotographic photoreceptor comprising a conductive support having thereon an amorphous silicon photoconductive layer and a surface protective layer is disclosed, the surface protective layer having a laminated structure comprised of a lower layer comprising nitrogen-containing amorphous silicon and an upper layer comprising amorphous carbon. The photoreceptor causes no image deletion even after repeated use under a high temperature and high humidity condition and exhibits excellent scratch resistance.

Electrophotographic photoreceptor with two part surface layer

An electrophotographic photoreceptor having a light-sensitive layer formed on an electrically conductive substrate is disclosed, which contains at least a layer chiefly made of a germanium-containing amorphous carbon as a light-sensitive layer or an anti-reflection layer.

Electrophotographic photoreceptor with amorphous carbon containing

A method for preparing an electrophotographic photoreceptor is disclosed, which comprises a substrate having thereon a charge generating layer containing an amorphous silicon as a main component and a charge transporting layer containing aluminum oxide as a main component, wherein the charge transporting layer is formed by an ion plating method while introducing oxygen gas.

Method for preparing an electrophotographic photoreceptor having a

An electrophotographic photoreceptor is disclosed which comprises a support having provided thereon a charge generating layer containing silicon as a main component and a charge transport layer containing as a main component an oxide of at least one element selected from aluminum, zirconium, and tantalum, said charge generating layer and charge transport layer being adjacent to each other. The photoreceptor has a charging capacity of about 50 V/.mu.m or more and a rate of dark decay of 15%/sec or less.

Electrophotographic photoreceptor with oxide of Al, Zr or Ta as charge

An electrophotographic photoreceptor having a photosensitive layer essentially made of amorphous silicon formed over a support, and a surface layer made of amorphous silicon formed over the photosensitive layer. The amorphous silicon of the photosensitive layer includes boron of 0.1-5 ppm, and the amorphous silicon of the surface layer includes nitrogen. The layers of material formed over the support include a charge blocking layer.

Electrophotographic photoreceptor with overlayer of amorphous Si with N

A photoreceptor for electrophotography, comprising: a photoconductive layer substantially composed of amorphous silicon, and first, second and third surface layers substantially composed of amorphous silicon added with nitrogen atom, those layers being formed on a support. The thickness d.sub.1, d.sub.2 and d.sub.3 of the first, second and third surface layers satisfies the following relation: d.sub.2 &gt;d.sub.1 and d.sub.2 &gt;d.sub.3, and the nitrogen concentrations c.sub.1, c.sub.2 and c.sub.3 of said first, second and third surface layers satisfy the following relation: c.sub.3 &gt;c.sub.2 &gt;c.sub.1.

Photoreceptor for electrophotography

An electrophotographic photoreceptor comprising a photoconductive layer, a first surface layer and a second surface layer formed in sequence on a support, said photoconductive layer being substantially composed of amorphous silicon, and each of said first and second surface layers being substantially composed of nitrogen-doped amorphous silicon, the concentration of nitrogen atoms in the second surface layer being higher than that in the first surface layer. The photoconductive layer is doped with atoms of an element of group III, or in at least a part of the photoconductive layer doped with germanium atoms in place of the element of group III.

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Kanagawa, Japan

Masayuki Nishikawa