Hitachi, Ltd.

Masayuki Nakata

Hiroshi Shinriki

Natsuki Yokoyama

Masayuki Suzuki

Tsuyoshi Tamaru

Shinpei Iijima

Ryo Haruta

Kiichiro Mukai

A dynamic random access memory or the like, in which in order to prevent the breakdown voltage deterioration of a capacitive element when a TiN film of an electrode material is deposited by the CVD method over a tantalum film constituting the capacitor insulating film of the capacitive element, a passivation film is formed in advance over the surface of the tantalum oxide film to prevent the tantalum oxide film from contacting a nitrogen-containing reducing gas, when the TiN film is deposited over the tantalum oxide film by the CVD method using a titanium-containing source gas and the nitrogen-containing reducing gas.

Method for manufacturing semiconductor integrated circuit device having

Herein disclosed is a process for manufacturing a semiconductor device, which comprises: a step of forming a first electrode composed of tantalum and tungsten over a semiconductor substrate; a step of depositing a dielectric film of tantalum oxide on the first electrode; a step of oxidizing the first electrode and the dielectric film of tantalum oxide; and a step of forming a second electrode over the dielectric film.

Process for manufacturing semiconductor devices

When a MOSFET containing a tantalum pentoxide film as a gate insulating film is formed, ion implantation is applied such that the end of an insulating film containing a tantalum pentoxide film situates to the outside of a gate electrode to thereby form source and drain regions. This can effectively prevent troubles such as short-circuitting due to tantalum pentoxide film and a highly reliable MOSFET can be obtained without applying light oxidation.

Method of manufacturing a semiconductor device

Growing community of inventors

Kokubunji, Japan

Masayuki Nakata