Dowa Electronics Materials Co., Ltd.

Nec Corporation

Other

Dena Co., Ltd.

Onoda Cement Co., Ltd.

Nihon Dengyo Kosaku Co., Ltd.

Ido Corporation

Masayuki Nakano

Yoshikazu Oshika

Hiroyuki Togawa

Hidetaka Yamada

Munenori Hashimoto

Yasuhiro Watanabe

Yasushi Yamada

Hiroyuki Arai

Masatoshi Inagawa

Katsuaki Kaneko

Tohru Matsuoka

Toshio Satoh

Ryozo Kuramoto

Shigeo Otozaki

Hideo Shibasaki

Noritoshi Tamura

Provided is a reflective electrode for a deep ultraviolet light-emitting element that enables a balance of both high light emission output and excellent reliability. A method of producing the reflective electrode for a deep ultraviolet light-emitting element includes: a first step of forming Ni with a thickness of 3 nm to 20 nm as a first metal layer on a p-type contact layer having a superlattice structure; a second step of forming Rh with a thickness of not less than 20 nm and not more than 2 μm as a reflective metal on the first metal layer; and a third step of performing heat treatment of the first metal layer and the second metal layer at not lower than 300° C. and not higher than 600° C.

Method of producing reflective electrode for deep ultraviolet light-emitting element, method of producing deep ultraviolet light-emitting element, and deep ultraviolet light-emitting element

A contest providing systemaccording to an embodiment of the present invention has a function of providing a user of a user terminalwith a contest for an avatar image, and managing the evaluation of avatar images in this contest. This systemaccepts the evaluation of the registered avatar image, while providing an avatar stamp corresponding to the avatar image on the basis of at least this evaluation. Therefore, even after the end of the contest in which the evaluation of the avatar image is performed, the user can continue to enjoy using the corresponding avatar stamp provided on the basis of the evaluation.

System, method, and program for managing evaluation of avatar images

A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, wherein: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed, in a view obtained by projecting these electrode portions, on an imaginary plane in parallel with the upper surface of the support substrate, respectively, in a positional relationship that these electrode portions, are offset from each other.

Semiconductor light emitting diode and method of producing the same

A semiconductor light emitting diode including: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, where: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed in such a positional relationship that these electrode portions are in parallel with and offset from each other and a distance between the upper electrode portion and the intermediate electrode portion is within the range of 10 &#x3bc;m to 50 &#x3bc;m.

A solder layer and an electronic device bonding substrate having high bonding strength of a device and low bonding failure even by a simplified bonding method of a device to a substrate and a method for manufacturing the same are provided. A device bonding substrateincluding a substrateand a lead free solder layerformed on said substrate has a solder layerconsisting of a plurality of layers having mutually different phases, and oxygen concentration on the upper surface of the solder layer is lower than 30 atomic % of the concentration of the metal component which is the most oxidizable among the metal components making up the upper layer of the solder layer. Carbon concentration on the upper surface of the solder layermay be lower than 10 atomic % of the concentration of the metal component which is the most oxidizable among the metal components making up the upper layer of the solder layer.

Solder layer and device bonding substrate using the same and method for manufacturing such a substrate

A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount () for having a semiconductor device mounted thereon comprises a submount substrate (), a substrate protective layer () formed on a surface of the submount substrate (), an electrode layer () formed on the substrate protective layer () and a solder layer () formed on the electrode layer () wherein the electrode layer () is made having an average surface roughness of less than 1 &#x3bc;m. The reduced average surface roughness of the electrode layer () improves wettability of the solder layer (), allowing the solder layer () and a semiconductor device to be firmly bonded together without any flux therebetween. A submount () is thus obtained which with the semiconductor device mounted thereon is reduced in heat resistance, reducing its temperature rise and improving its performance and service life.

Submount

A solder layer, a substrate for device joining utilizing the same and a method of manufacturing the substrate are provided whereby the device joined remains thermally unaffected, an initial bonding strength in solder joint is enhanced and the device can be soldered reliably. The solder layer formed on a base substrate () consists of a plurality of layers () of a solder free from lead, which are different in its phase from one another. They are constituted by a layer of a phase that is completely melted, and a layer of a phase that is not completely melted at a temperature not less than a eutectic temperature of the solder. The solder layer () can be applied to a device joining substrate () comprising an electrode layer () formed on the base substrate () and the solder layer () formed on the electrode layer.

Solder layer, substrate for device joining utilizing the same and method of manufacturing the substrate

Submount and method of manufacturing the same

A solder layer and an electronic device bonding substrate using the layer are provided which avoid deteriorating qualities of the electronic device to be bonded. In a solder layerfree from lead and formed on a substrateor an electronic device bonding substratehaving such a solder layer, the solder layerhas a specific resistance of not more than 0.4 &#x3a9;&#xb7;&#x3bc;m. The electronic device bonding substratecan have a thermal resistance of not more than 0.5 K/W and a thickness of not more than 10 &#x3bc;m. Then, voids contained in the solder layerhave a maximum diameter of not more than 0.5 &#x3bc;m and the substrate can be a submount substrate.

Solder layer and electronic device bonding substrate and submount using the same

A heat sink () is disclosed which comprises a substrate (), an electrode layer () formed on the substrate () and a solder layer () formed on the substrate () wherein the solder layer () provides a bonding strength of not less than 30 MPa and a shear strain of not less than 0.07. The heat sink may be a sub-mount which comprises a sub-mount substrate (), an electrode layer () formed on the substrate () and a solder layer () formed on the substrate () wherein the electrode layer () is formed with a window portion (A) having the solder layer () embedded therein and is connected to an outer peripheral area of the solder layer (). A sub-mount that has a high strength of bonding between the solder layer () and a semiconductor device is provided at a reduced cost.

Solder layer, heat sink using such a solder layer and method for manufacturing such a heat sink

An optical module has a lever for bending a spring plate possessed by a cage for accommodating a case of the optical module in a direction in which a retaining hole formed through the spring plate comes off a latch formed on the case. The lever has a shaft pivotably supported on the case, a tongue disposed on one side of the shaft, and an actuator disposed on the opposite side of the shaft with respect to the tongue. The lever pivotally moves about the shaft in response to a movement of the tongue toward the case, causing the actuator to press the spring plate to bend in the foregoing direction. A user can readily release the latch by moving the tongue toward the case, and withdraw the optical module from the cage through a simple manipulation of pulling the case out while holding the case and tongue together.

Optical module with lever that abuts case to release latch from locking state with cage which accommodates optical module

A circuit for monitoring an optical signal level provided in an optical receiver includes a clock extraction circuit, a noise detection circuit, and an alarm circuit. The clock extraction circuit extracts a clock from an input signal. The noise detection circuit multiplies the clock, utilizes the multiplied clock to identify surge noises included in the input signal, and outputs noise pulses. The alarm circuit counts the noise pulses and outputs an alarm signal when the number of the pulses counted within a certain period reaches a preset value. The surge noise is a noise having a level which is relatively increased as the input signal level is lowered.

Circuit and method for monitoring optical signal level

An optical transmitter includes a light-emitting diode, a drive circuit for outputting a light signal while driving the light-emitting diode which is connected between two electrodes of an anode and a cathode of the light-emitting diode, a voltage applying terminal for a light-emitting diode which is arranged on a package on which the light-emitting diode and the drive circuit are mounted, for applying a voltage to one electrode of the light-emitting diode, and a current supplying terminal for screening a light-emitting diode and arranged on the package for applying a current to the other electrode of the light-emitting diode at a time of screening the light-emitting diode.

Optical transmitter

In a laser diode driving method, a bias current set about the light emission threshold current of a laser diode, and a pulse current for causing the laser diode to emit light are adjusted in accordance with the ambient temperature. The laser diode is driven by a current prepared by superposing the bias current and the pulse current, thereby controlling the optical output and extinction ratio of the laser diode at a constant level. A laser diode driving circuit is also disclosed.

Laser diode driving method and circuit

The reflector-provided dipole-antenna shows outstanding performance in a wide frequency range and allows simultaneous transmission and reception at different frequencies. A dipole antenna element is provided at the back of a dielectric substrate set to the reflector surface. A parasitic element is provided on the front of the dielectric substrate, which is constituted by forming and protruding the central portion of a linear conductor forward in an almost trapezoidal shape, for example. The protruded portion is set to a position corresponding to the front of the feed point of the dipole antenna element and the portions of the said parasitic element towards the ends are set to positions corresponding to the rear of the dipole antenna element. A feed circuit provided on the face side of dielectric substrate is connected to a coaxial connector provided at the back of the reflector.

Growing community of inventors

Tokyo, Japan

Masayuki Nakano