Sharp Kabushiki Kaisha Corporation

Kubota Corporation

Kobata Gauge Manufacturing Co., Ltd.

Masayuki Nakano

Hiroshi Iwata

Seizo Kakimoto

Toshimasa Matsuoka

Kouichiro Adachi

Seizou Kakimoto

Akihide Shibata

Tomohisa Yoshie

Shigeki Hayashida

Daisuke Toyoshima

Kotaro Kataoka

Satoshi Shimizu

Yuki Watanabe

Satoshi Morishita

Masato Sasaki

Masataka Takagi

Atsushi Fukui

Yoshiyuki Nakai

Kenzo Ushiro

Yutaka Inubushi

Eiji Miyazaki

Naoya Muramoto

Arinobu Ishida

Takashi Fukushima

Kouichirou Adachi

Koichi Kawaguchi

Fumiyoshi Yoshioka

Iwao Kobata

Kohichiro Adachi

Tetsuya Ikemoto

A solar battery unit () is provided that includes: a substrate (); a solar battery () attached to a back face of the substrate (); and a communications module () attached to the substrate (). The communications module () includes an antenna () disposed so as not to overlap solar cells () in the solar battery () in a front view.

Solar battery unit and wireless transmitter including solar battery unit

Data transmitter with solar cell and sensor

Communication module with solar cell

To provide a semiconductor storage unit that has a simple structure requiring only a small number of processes to produce, and is provided with a gate insulating film having a memory function. The semiconductor storage unit has a semiconductor layer, two diffusion layer regions forming a source region and a drain region, which are formed on the semiconductor layer, a channel region fixed between the two diffusion layer regions, a gate insulating film that is formed on the channel region, and made of a silicon oxide film containing carbon atoms of 0.1 to 5.0 atomic percent, and a gate electrode formed on the gate insulating film.

Semiconductor storage unit, semiconductor device and display device as well as liquid crystal display and image receiving apparatus

A work vehicle operable in a rearward facing position using a simple construction is disclosed. The work vehicle includes a hydrostatic stepless change speed device for transmitting power from an engine to a traveling device, a change speed pedal mechanism operable in a forward facing position for changing speeds in the hydrostatic stepless change speed device, and a travel-control lever provided at a rear position of a vehicle body and operable in the rearward facing position. The travel-control lever and the change speed pedal mechanism are linked to each other through a mechanical interlocking mechanism so as to control the hydrostatic stepless change speed device by the travel-control lever through the change speed pedal mechanism.

Work vehicle with drive operation device

A semiconductor storage device has a semiconductor layer having a first conductivity type region and two second conductivity type regions separated from each other by the first conductivity type region, a memory function body formed on a surface of the semiconductor layer, and a gate electrode. The memory function body has a charge storage insulator and a charge retention insulator positioned between the charge storage insulator and the semiconductor layer, and doubles as a gate insulating film. The charge retention insulator contains such impurity atoms (phosphorus) as would cause an intrinsic semiconductor to be of the second conductivity type.

Semiconductor storage device, manufacturing method therefor, and portable electronic equipment

A work vehicle with a front loader is disclosed. The work vehicle includes a traveling control section having an operator's seat, a hood provided forwardly of the traveling control section, a pair of masts provided on right and left sides of the hood, a pair of booms projecting forwardly from upper ends of the masts and an implement detachably connected to the booms. An upper face of the hood is inclined downwardly from its rear upper portion to its front upper portion. The inclined upper face is located adjacent a downward line of sight from an operator's space in the traveling control section to a connecting portion between each boom and the implement.

Work vehicle having front loader

A semiconductor storage device has a single gate electrode formed on a semiconductor substrate through a gate insulation film. First and second memory function bodies formed on both sides of the gate electrode. A P-type channel region is formed in a surface of the substrate on the side of the gate electrode. N-type first and second diffusion regions are formed on both sides of the channel region. The channel region is composed of an offset region located under the first and second memory function bodies and a gate electrode beneath region located under the gate electrode. The concentration of a dopant which imparts a P-type conductivity to the offset region is effectively lower than the concentration of a dopant which imparts the P-type conductivity to the gate electrode beneath region. This makes it possible to provide the semiconductor storage device which is easily shrunk in scale.

Semiconductor storage device, manufacturing method therefor and portable electronic equipment

A semiconductor devicecomprises a semiconductor substrateincluding an isolation regionand an active region, a gate electrodeprovided on the active regionvia a gate insulating film, part of a side of the gate electrodebeing covered with a gate electrode side wall insulating film, and a source regionand a drain regionprovided on opposite sides of the gate electrodevia the gate electrode side wall insulating film. At least one of the source regionand the drain regionhas a second surface for contacting a contact conductor. The second surface is tilted with respect to a first surface A&#x2013;A'. An angle between the second surface and a surface of the isolation region is 80 degrees or less.

Semiconductor device, method for producing the same, and information processing apparatus

By removing halogen atoms existing on the surface of the silicon layer and in the subsurface thereof so that the concentration of halogen atoms becomes 100 ppm or lower and forming an electrode on the resulting silicon layer, the electrode which has a low resistance can be produced, and a highly reliable semiconductor device can be produces as well.

Process for fabricating a semiconductor device

A semiconductor device of the present invention includes: a semiconductor substrate; a deep well region of a first conductivity type, formed in the semiconductor substrate; a plurality of shallow well regions of a second conductivity type, formed in the deep well region; a source region and a drain region of the first conductivity type, respectively formed in the plurality of shallow well regions; a channel region formed between the source region and the drain region; a gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film, wherein the gate electrode is electrically connected to a corresponding one of the shallow well regions, and the shallow well region is electrically separated from the adjacent shallow well region.

Semiconductor device and method for fabricating the same

A semiconductor device comprises a semiconductor substrate including an isolation region and an active region a gate electrode provided on the active region via a gate insulating film part of a side of the gate electrode being covered with a gate electrode side wall insulating film and a source region and a drain region provided on opposite sides of the gate electrode via the gate electrode side wall insulating film At least one of the source region and the drain region has a second surface for contacting a contact conductor. The second surface is tilted with respect to a first surface A-A&prime;. An angle between the second surface and a surface of the isolation region is 80 degrees or less.

Semiconductor device, method of manufacture thereof, and information processing device

A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen atoms and silicon atoms from the silicon nitride film are incorporated into the surface of the silicon semiconductor substrate together with introduction of impurity ions. The silicon semiconductor substrate has a minimized content of oxygen mixed thereinto and restored crystal defects filled by nitrogen atoms upon implanting of impurity ions. The fabricated semiconductor device is free from a trade-off relation between gate-electrode depletion and junction current leakage, and short-channel effects.

Semiconductor device having junction depths for reducing short channel effect

A semiconductor device according to the present invention includes a semiconductor substrate; device isolation regions provided in the semiconductor substrate; a first conductivity type semiconductor layer provided between the device isolation regions; a gate insulating layer provided on an active region of the first conductivity type semiconductor layer; a gate electrode provided on the gate insulating layer; gate electrode side wall insulating layers provided on side walls of the gate electrode; and second conductivity type semiconductor layers provided adjacent to the gate electrode side wall insulating layers so as to cover a portion of the corresponding device isolation region, the second conductivity type semiconductor layers acting as a source region and/or a drain region. The gate electrode and the first conductivity type semiconductor layer are electrically connected to each other. The second conductivity type semiconductor layers are provided above the first conductivity type semiconductor layer and have a thickness which gradually increases from the device isolation region toward the gate electrode.

Semiconductor device and method for producing the same

A gate oxide film ( ), a gate electrode ( ) and a gate cap insulating film ( ) are stacked on an active region of a p-type semiconductor substrate ( ), and an insulating side wall ( ) is formed, followed by BF ion implantation. Thus, a surface of the p-type semiconductor substrate becomes amorphous so that single-crystal silicon is prevented from epitaxially growing in the next process of depositing polysilicon ( ). Halo regions ( ) are formed using the BF ions having the opposite conductivity to a source/drain to reduce the short-channel effect. The substrate is then passed through a nitrogen purge chamber having a dew point kept at &minus;100&deg; C. to remove water molecules completely, and polysilicon ( ) is deposited. Because native oxide is prevented from growing at an interface between the active region and the polysilicon, source/drain regions ( ) formed later by implantation and diffusion of n-type impurity ions achieve a uniform junction depth.

Growing community of inventors

Nara, Japan

Masayuki Nakano