Kyocera Corporation

Masayuki Moriyama

Yuusaku Ishimine

Kiyotaka Nakamura

Kazuhiko Fujio

Hidehiro Takenoshita

Keiichi Sekiguchi

Kenji Komatsubara

Chisato Ishida

Yuuya Nakao

Yoshinori Hirano

Chigusa Onishi

The bonded ceramic assembly of the present disclosure includes a first substrate made of ceramic, a second substrate made of ceramic, and a bonding layer positioned between the first substrate and the second substrate. The bonding layer contains aluminum, at least one of calcium and magnesium, a rare earth element, silicon, and oxygen. Out of a total 100 mass % of all of the components making up the bonding layer, the bonding layer contains from 33 mass % to 65 mass % aluminum in terms of oxide, a total of from 27 mass % to 60 mass % calcium and magnesium in terms of oxide, and from 2 mass % to 12 mass % rare earth element in terms of oxide. The silicon content, in terms of oxide, of the surface of the bonding layer is greater than the silicon content, in terms of oxide, of the interior of the bonding layer.

Bonded ceramic assembly

A ceramic bonded body of the disclosure includes a first silicon carbide ceramics, a second silicon carbide ceramics, and a bonding layer positioned between the first silicon carbide ceramics and the second silicon carbide ceramics. The bonding layer contains 25 mass % or more metallic silicon, and 25 mass % or more silicon carbide assuming all components constituting the bonding layer as 100 mass %, and a total of the metallic silicon and the silicon carbide is 75 mass % or more, and the bonding layer further contains at least one of nickel silicide and chromium silicide.

Ceramic bonded body

In the present disclosure, a flow path member includes a substrate, a flow path and a first oxide layer. The substrate contains non-oxide ceramics, and includes an outer surface. The flow path is in the substrate, and includes an inlet and an outlet. The first oxide layer is disposed on the outer surface.

Flow path member

A flow channel member according to the present invention includes a ceramic substrate, a flow channel inside the ceramic substrate through which a fluid flows, and multiple protrusions on an outer surface of the substrate.

Flow channel member, and heat exchanger and semiconductor module each using same

A silicon nitride substrate comprises a substrate comprising a silicon nitride sintered body, and a plurality of granular bodies containing silicon and integrated to a principal surface of the substrate, wherein a plurality of needle crystals or column crystals comprising mainly silicon nitride are extended from a portion of the granular bodies. A brazing material is applied to a principal surface of the substrate, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies integrated to the principal surface of the substrate, and a plurality of the needle crystals or the column crystals extended from a portion of the granular bodies, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate.

Silicon nitride substrate, circuit substrate and electronic device using the same

A ferrite core comprising a sintered oxide containing at least 48.6 to 53.9 mol % of Fe on FeObasis, 12.3 to 35.2 mol % of Ni on NiO basis and 16.4 to 37.0 mol % of Zn on ZnO basis as metal elements, and contains a crystal phase comprising two or more kinds of solid solutions selected from NiFeO, ZnFeOand FeFeO, wherein full width at half maximum of a diffraction peak, of crystal phase of which diffraction angle 2&#x3b8; is in a range from 34.6 to 36.4&#xb0; as measured by X-ray diffraction analysis using Cu&#x2014;K&#x3b1; beam, is 0.4&#xb0; or less.

Growing community of inventors

Kirishima, Japan

Masayuki Moriyama