Japan Energy Corporation

Nippon Mining Co., Ltd.

Masayuki Mori

Takayuki Tsukada

Osamu Oda

Hiroki Koyama

Naoharu Igarashi

Hideaki Kumagai

Kenji Nakamura

Motoi Saito

Hiromasa Yamamoto

A method for producing a hydrorefining catalyst of the present invention has a step of preparing an aluminum solution containing phosphorus in a molar ratio of 0.001 to 0.05 with respect to aluminum; a step of neutralizing the prepared aluminum solution to produce a pseudo-boehmite powder; a step of forming the pseudo-boehmite powder followed by performing calcination at a temperature of not less than 650&#xb0; C. to obtain a carrier; and a step of carrying a hydrogenation-active metal on the pseudo-boehmite powder or the carrier. The dispersion of the concentration distribution of phosphorus in the carrier of the obtained catalyst is within 10%. This method makes it possible to obtain the hydrorefining catalyst which has a practically sufficient mechanical strength and which has an excellent activity.

Hydro-refining catalyst, carrier for use therein and method for production thereof

A heavy oil hydrorefining catalyst of the present invention is such that the total volume of pores with a diameter of 60 nm or less is at least 0.5 mL/g, and the pore diameter distribution has a broad band over a pore diameter range of 8 to 30 nm. The hydrorefining catalyst has excellent desulfurization characteristics and excellent demetalization characteristics, and its performance can be maintained over an extended period. When this catalyst is used in a hydrorefining apparatus equipped with a plurality of catalyst layers, the apparatus can be operated stably at a higher temperature than in the past without decreasing the desulfurization performance, and this also enhances the demetalization characteristics.

Hydrofining catalyst and hydrofining process

A method for producing compound semiconductor single crystal substrates which comprises the following steps, wafers of a compound semiconductor single crystal grown by the LEC method are installed in an evacuated and sealed quartz ampoule and subjected to a first annealing step at the predetermined temperature for the predetermined period, then the wafers are gradually cooled down to room temperature at the predetermined cooling speed, the cooled wafers are then subjected to etching, the etched wafers are subjected to a second annealing step at the predetermined temperature for the predetermined period in a non-oxidizing atmosphere, and finally, the wafers are gradually cooled down to room temperature.

Method for producing compound semiconductor single crystal substrates

Growing community of inventors

Toda, Japan

Masayuki Mori