Stella Chemifa Kabushiki Kaisha

Other

Stella Chemifa Corporation

Tohoku University

Frontec Incorporated

Stella Chemifa Coporation

Masayuki Miyashita

Hirohisa Kikuyama

Tadahiro Ohmi

Takanobu Kujime

Yasuhiko Kasama

Akinobu Teramoto

Tatsuhiro Yabune

Toshirou Fukudome

Hirofumi Fukui

Masahide Waki

Chisato Iwasaki

Matagoro Maeno

Hitoshi Seki

Hiroto Izumi

Tomohiko Satonaga

Satoshi Miyazawa

Kazuhiko Shogami

Rui Hasebe

Jun Takano

Keiichi Nii

Provided is a fine-processing agent which, when fine-processing a laminated film stacked at least with a silicon dioxide film and a silicon nitride film, can selectively fine-process the silicon dioxide film. Also provided is a fine-processing method utilizing the fine-processing agent. The fine-processing agent is characterized by including: (a) 0.01-15.0 weight % hydrogen fluoride and/or 0.1-40.0 weight % ammonium fluoride, (b) water, and (c) 0.001-10.00 weight % water-soluble polymer selected from among a group consisting of acrylic acid, ammonium acrylate, acrylic acid ester, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.

Fine-processing agent and fine-processing method

A production method of high purity silver tetrafluoroborate, capable of producing silver tetrafluoroborate (AgBF) at purity higher than the conventional, without using an organic solvent. The production method of the present invention is characterized in that the method comprises the step of: reacting silver fluoride with boron trifluoride in the presence of anhydrous hydrofluoric acid. Boron trifluoride is delivered into a solution obtained by dissolving or suspending silver fluoride in an anhydrous hydrofluoric acid solution.

Production method of high purity silver tetrafluoroborate

A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NHF), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.

Surface treatment solution for the fine surface processing of a glass substrate containing multiple ingredients

Disclosed is a method for cleaning a semiconductor substrate that can solve a problem of a conventional cleaning method which should include at least five steps for cleaning a substrate such as a semiconductor substrate. The method for cleaning a semiconductor substrate comprises a first step of cleaning a substrate with ultrapure water containing ozone, a second step of cleaning the substrate with ultrapure water containing a surfactant, and a third step of removing an organic compound derived from the surfactant, with a cleaning liquid containing ultrapure water and 2-propanol. After the third step, plasma of noble gas such as krypton is applied to the substrate to further remove the organic compound derived from the surfactant.

Method for manufacturing semiconductor device and method for cleaning semiconductor substrate

A method for removing calcium from water containing a high concentration of calcium bicarbonate, permitting a reduction of the calcium bicarbonate equivalent to 200-500 ppm calcium to the level in accordance with the water quality standards for industrial use, not by a method using a large amount of heat and power as heating and deairing, but by a simple chemical treatment. Calcium hydroxide is added to waste water containing a high concentration of calcium in a form of calcium bicarbonate for making them react with each other, and removing calcium by fixing it to calcium bicarbonate.

Method of removing calcium from water containing calcium hydrogen carbonate in high concentration

An etching agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.

Etchant

The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1% by weight.

Surface treating for micromachining and method for surface treatment

A stainless steel with a passive state fluorinated film formed thereon, which is easy to construct and does not produce particles even when it is welded, and a device using the same. The stainless steel does not cause leakage even when said film is formed on a sealing surface of a joint and a valve seat surface. The stainless steel is characterized in that at least a part of the surface coated with a passive state fluorinated film not thicker than 190&angst; consisting of a metal fluoride as a main component.

Stainless steel having passive fluoride film formed thereon and equipment manufactured therefrom

A method is provided for fixing and eliminating fluorine and phosphorus in waste water wherein the waste water includes a fluorophosphate compound in which hydrochloric acid is added to the waste water including the fluorophosphate compound. The waste water to which hydrochloric acid has been added is heated in order to decompose the fluorophosphate compound into hydrogen fluoride and phosphoric acid, while hydrogen chloride gas located within a treating vessel in which the waste water is contained is introduced into a condenser provided outside of the treating vessel, and then a calcium salt is added to the waste water after decomposition in order to fix and eliminate fluorine and phosphorus.

Method for fixing fluorine and phosphorus in waste water containing fluorophosphoric acid-derived compound to remove them

An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.

Surface treatment for micromachining

An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 or 6, p is 1, 2 or 3), at a concentration of at least 0.01 mol/l. An electronic device manufactured using the etching agent requires only a single etching step to etch both conductive layers (such as aluminum) as well as ohmic contact layers (a-Si).

Growing community of inventors

Osaka-fu, Japan

Masayuki Miyashita