Ntn Corporation

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Masayuki Kuroda

Masahiro Ozawa

Hisaaki Kura

Tetsuzo Ueda

Yuichi Asano

Manabu Yanagihara

Tatsuro Sugiyama

Tohru Nakagawa

Hiroshi Kawamura

Eiji Tajima

Akira Torii

Keisuke Sone

Shigeaki Fukushima

Shin Tomogami

Nobuyoshi Yamashita

Motoharu Niki

Koji Sahashi

Kazuhiko Hozumi

Yoshikazu Fukumura

Masuo Takaki

Yutaka Yamauchi

Kenichiro Tanaka

Hidetoshi Ishida

Mitsuru Umekida

Kiyoshige Yamauchi

Saichirou Kaneko

Hiroto Yamagiwa

Haruo Nagatani

Ayanori Ikoshi

Tetsuyuki Fukushima

Masahiro Hikita

Takahiro Sato

Kenji Terada

Tomohiro Murata

Hideyuki Okita

Shinichi Oki

A semiconductor device includes: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer; finger-shaped source electrodes on the second nitride semiconductor layer; finger-shaped drain electrodes disposed so as to be spaced apart from the source electrodes; and finger-shaped gate electrodes respectively disposed between the source electrodes and the drain electrodes. The gate electrodes are electrically connected, via a first gate integrated wiring, a plurality of second gate integrated wirings and a third gate integrated wiring, to gate pads located on one or both ends of the third gate integrated wiring. A plurality of source pads and the plurality of second gate integrated wirings are formed alternately in a first direction perpendicular to the longitudinal direction of the gate electrodes.

Semiconductor device and semiconductor component including the same

In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

Semiconductor device

A nitride semiconductor device includes a transistor having a semiconductor stacked body formed on a substrate, and a pn light-emitting body formed on the semiconductor stacked body. The semiconductor stacked body includes a first nitride semiconductor layer, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than that of the first nitride semiconductor layer. The transistor includes: the semiconductor stacked body; a source electrode and a drain electrode formed away from each other on the semiconductor stacked body; and a gate electrode provided between the source electrode and the drain electrode and formed away from the source electrode and the drain electrode. The pn light-emitting body includes a p-type nitride semiconductor layer and an n-type nitride semiconductor layer to emit a light beam having an energy value higher than an electron trapping level existing in the semiconductor stacked body, in which the p-type nitride semiconductor layer of the pn light-emitting body is electrically connected to the gate electrode, and functions as a gate of the transistor.

Nitride semiconductor device

A bearing device for a wheel has a hub wheel and a constant velocity universal joint with an outer joint member. Projecting portions extending in an axial direction are provided on one of an outer surface of a shaft section of the outer joint member and an inner surface of a hole portion of the hub wheel. The projecting portions are press-fitted into the other along the axial direction, and recessed portions are formed in the other through press-fitting of the projecting portions. Thus, a recess-projection fitting structure is formed, in which the projecting portions and the recessed portions are held in close contact with each other through an entire region of fitting contact regions therebetween.

Bearing device for wheel, and axle module

A bearing device for a wheel is capable of suppressing radial play and allowing firm and easy connection between a hub and an outer ring of a constant velocity universal joint. Axially extending projections are provided on a shaft portion of a joint outer ring, and the shaft portion is press-fitted into a hole of a hub. Through this press-fitting, recesses held in close fit-engagement with the projections are formed by the projections in an inner diameter surface of the hub, forming a recess/projection fit-engagement structure in which the projections and the recesses are held in close contact with each other over an entire fit-engagement region thereof. A press-fitting margin (&#x394;d) of the projections with respect to the hub and a height (h) of the projections are set to the following range: 0.3&#x3c;&#x394;d/2 h&#x3c;0.86.

Bearing device for a wheel

A bearing device for a driving wheel includes an outer race having an inner periphery in which double-row outer raceway surfaces are formed; a hub wheel and an inner race having outer peripheries in which double-row inner raceway surfaces opposed to the outer raceway surfaces are formed; and double-row rolling elements interposed between the outer raceway surfaces and the inner raceway surfaces. A shaft hole of the hub wheel is formed into a cylindrical shape, and a male spline is formed on an outer periphery of a stem section of the outer joint member so that the stem section of the outer joint member is press-fit into the shaft hole of the hub wheel. With this, recesses caused to fit on the male spline with interference are formed in the shaft hole of the hub wheel, whereby the hub wheel and the outer joint member are separably coupled to each other.

Bearing device for driving wheel, and its assembling method

A bearing device for a wheel is capable of suppressing radial play and allowing firm and easy connection between a hub and an outer ring of a constant velocity universal joint. Axially extending projections are provided on a shaft portion of a joint outer ring, and the shaft portion is press-fitted into a hole of a hub. Through this press-fitting, recesses held in close fit-engagement with the projections are formed by the projections in an inner diameter surface of the hub, forming a recess/projection fit-engagement structure in which the projections and the recesses are held in close contact with each other over an entire fit-engagement region thereof. A press-fitting margin (&#x394;d) of the projections with respect to the hub and a height (h) of the projections are set to the following range: 0.3&#x3c;&#x394;d/2h&#x3c;0.86.

A bearing device for a wheel suppresses backlash in a circumferential direction, has excellent coupling workability with a hub wheel and an outer joint member of a constant velocity universal joint, and has excellent strength owing to stable fitting between the hub wheel and the outer joint member. Projecting portions extending in an axial direction are provided on one of an outer surface of a shaft section of the outer joint member and an inner surface of a hole portion of the hub wheel. The projecting portions are press-fitted into the other along the axial direction, and recessed portions are formed in the other through press-fitting of the projecting portions. Thus, a recess-projection fitting structure is formed, in which the projecting portions and the recessed portions are held in close contact with each other through an entire region of fitting contact regions therebetween.

A bearing unit for driving wheels, and a manufacturing method thereof, includes a hub, a bearing, and a constant velocity universal joint, such that a process for assembling the bearing unit to a knuckle member is simplified. In order to achieve this, a hub () and an outer joint member () of an out-board side constant velocity universal joint () are plastically joined together. An outer peripheral surface () of an outer member () is press-fitted into an inner peripheral surface of the knuckle member, and a maximum diameter dimension (D) of the out-board side constant velocity universal joint () is set smaller than a minimum diameter dimension (Dn) of the knuckle member (). Also, a maximum diameter dimension (D) of an in-board side constant velocity universal joint () is set smaller than the minimum diameter dimension (Dn) of the knuckle member ().

Bearing unit for driving wheels

A cylindrical pilot portion () to be fitted to an inner periphery of a wheel () is formed at an inner diameter part of a brake rotor (). A shape of a hub wheel, in particular, the shape on an outboard side is thus simplified, and the hub wheel can be formed at low cost through cold forging or the like.

Bearing unit for wheel

A normally-off type field effect transistor includes: a first semiconductor layer which is made of a first hexagonal crystal with 6 mm symmetry and has a main surface including a C-axis of the first hexagonal crystal; a second semiconductor layer which is formed on the main surface of the first semiconductor layer and is made of a second hexagonal crystal with 6 mm symmetry having a band gap different from a band gap of the first hexagonal crystal; and a gate electrode, a source electrode and a drain electrode that are formed on the second semiconductor layer. Here, the film thickness of the first nitride semiconductor layer is 1.5 &#x3bc;m or less and the second semiconductor layer is doped with impurities at a dose of 1&#xd7;10cmor more.

Field effect transistor with main surface including C-axis

A field effect transistor includes: a first nitride semiconductor layer having a plane perpendicular to a (0001) plane or a plane tilted with respect to the (0001) plane as a main surface; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider bandgap than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer; and a source electrode and a drain electrode formed so as to contact at least a part of the second nitride semiconductor layer or the third nitride semiconductor layer. A recess that exposes a part of the second nitride semiconductor layer is formed between the source electrode and the drain electrode in the third nitride semiconductor layer. A gate electrode is formed in the recess and an insulating film is formed between the third nitride semiconductor layer and the gate electrode.

Field effect transistor

It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of semiconductor and metal. The nitride semiconductor device includes a GaN layer, a device isolation layer, an ohmic electrode, an n-type AlGaN layer, a sapphire substrate, and a buffer layer. A main surface of the n-type AlGaN layer is on (0 0 0 1) plane as a main surface, and concaves are arranged in a checkerboard pattern on the surface. The ohmic electrode contacts the sides of the concaves of the n-type AlGaN layer, and the sides of the concaves are on non-polar surfaces such as (1 1 &#x2212;2 0) plane or (1 &#x2212;1 0 0) plane.

Nitride semiconductor device and manufacturing method thereof

A semiconductor device includes: a first semiconductor layer which is made of a first group III nitride semiconductor; a cap layer which is formed on the first semiconductor layer, which is made of a second group III nitride semiconductor, and which has an opening for exposing the first semiconductor layer; and a source electrode and a drain electrode which are formed on the cap layer so as to oppose to each other with the opening interposed. A gate electrode is formed on the bottom face of the opening with an insulating film interposed. The insulating film is formed on at least a part of the first semiconductor layer which is exposed through the opening.

Growing community of inventors

Osaka, Japan

Masayuki Kuroda