Ebara Corporation

Ebara Technologies Incorporated

Masayuki Kumekawa

Hozumi Yasuda

Itsuki Kobata

Mitsuhiko Shirakashi

Takayuki Saito

Yasushi Toma

Tsukuru Suzuki

Kaoru Yamada

Yuji Makita

Osamu Nabeya

Kenichi Kobayashi

Mitsuru Miyazaki

Junji Kunisawa

Seiji Katsuoka

Kazuto Hirokawa

Toshio Yokoyama

Masahiko Sekimoto

Teruyuki Watanabe

Satoshi Sendai

Kenya Tomioka

Katsumi Tsuda

Koji Mishima

Naoaki Ogure

Akihisa Hongo

Nobuyuki Takada

Kaori Yoshida

Koichi Fukaya

Ikutaro Noji

Huey-Ming Wang

Takeshi Iizumi

Kenichi Sasabe

Norio Kimura

A method and device for regenerating an ion exchanger can regenerate an ion exchanger easily and quickly, and can minimize a load upon cleaning of the regenerated ion exchanger and disposal of waste liquid. A method for regenerating a contaminated ion exchanger includes: providing a pair of a regeneration electrode and a counter electrode, a partition disposed between the electrodes, and an ion exchanger to be regenerated disposed between the counter electrode and the partition; and applying a voltage between the regeneration electrode and the counter electrode while supplying a liquid between the partition and the regeneration electrode and also supplying a liquid between the partition and the counter electrode.

Method for regenerating ion exchanger

A substrate polishing apparatus includes a substrate holding mechanism having a head for holding a substrate to be polished, and a polishing mechanism including a polishing table with a polishing pad mounted thereon. The substrate held by the head is pressed against the polishing pad on the polishing table to polish the substrate by relative movement of the substrate and the polishing pad. The substrate polishing apparatus also includes a substrate transfer mechanism for delivering the substrate to be polished to the head and receiving the polished substrate. The substrate transfer mechanism includes a substrate to-be-polished receiver for receiving the substrate to be polished, and a polished substrate receiver for receiving the substrate which has been polished.

Substrate polishing apparatus and method

This invention relates to an electrolytic processing apparatus and method useful for processing a conductive material formed in the surface of a substrate, or for removing impurities adhering to the surface of a substrate. An electrolytic processing apparatus, including, a processing electrode that can come close to a workpiece, a feeding electrode for feeding electricity to the workpiece, an ion exchanger disposed in the space between the workpiece and the processing and the feeding electrodes, a fluid supply section for supplying a fluid between the workpiece and the ion exchanger, and a power source. The processing electrode and/or the feeding electrode is electrically divided into a plurality of parts, and the power source applies a voltage to each of the divided electrode parts and can control voltage and/or electric current independently for each of the divided electrode parts.

Electrolytic processing apparatus and method

An electrolytic processing apparatus which, while eliminating a CMP processing entirely or reducing a load on a CMP processing to the least possible extent, can process and flatten a conductive material formed in the surface of a substrate, or can remove (clean) extraneous matter adhering to the surface of a workpiece such as a substrate. The present invention includes an electrode section including a plurality of electrode members disposed in parallel, each electrode member including an electrode and an ion exchanger covering the surface of the electrode, a holder for holding a workpiece, which is capable of bringing the workpiece close to or into contact with the ion exchanger of the electrode member, and a power source to be connected to the electrode of each electrode member of the electrode section. The ion exchanger of the electrode member includes an ion exchanger having an excellent surface smoothness and an ion exchanger having a large ion exchange capacity.

Electrolytic processing apparatus and electrolytic processing method

The present invention replaces all or a portion of substrate processing by chemical-mechanical polishing with electrolytic processing using deionized water, ultrapure water or the like. An electrolytic processing apparatus comprises: a chemical-mechanical polishing section for chemically-mechanically polishing a surface of a substrate; an electrolytic processing section having a processing electrode and a feeding electrode, and also having an ion exchanger provided at least either between the substrate and the processing electrode or between the substrate and the feeding electrode, for electrolytically processing a surface of a workpiece under existence of a solution by applying a voltage between the processing electrode and the feeding electrode; and a top ring capable of freely moving between the chemical-mechanical polishing section and the processing electrode section.

Electrolytic processing apparatus and substrate processing apparatus and method

Method and device for regenerating ion exchanger, and electrolytic processing apparatus

A substrate processing apparatus can perform an electrolytic processing, which is different from a common, conventional etching, to remove (clean off) a conductive material (film) formed on or adhering to a bevel portion, etc. of a substrate, or process a peripheral portion of a substrate through an electrochemical action. The substrate processing apparatus includes: an electrode section having a plurality of electrodes which are laminated with insulators being interposed, and having a holding portion which is to be opposed to a peripheral portion of a substrate; an ion exchanger disposed in the holding portion of the electrode section; a liquid supply section for supplying a liquid to the holding position of the electrode section; and a power source for applying a voltage to the electrodes of the electrode section so that the electrodes alternately have different polarities.

Substrate processing apparatus and method

A plating apparatus and method which smoothly perform contact of a plating liquid with a surface of the substrate and which can prevent air bubbles from remaining on the surface to be plated. The plating apparatus includes a plating bath containing a plating liquid in which an anode is immersed, a head portion for holding a substrate detachably and bringing a lower surface, to be plated, of the substrate into contact with an overflow surface of the plating liquid held in the plating bath, a drive mechanism for rotating the head portion, and a tilt mechanism for tilting the head portion so that the substrate held by the head portion is inclined relative to a horizontal plane.

Plating apparatus and method

There is provided an electrolytic processing device including: a processing electrode to be brought into contact with or close to a workpiece; a feeding electrode for supplying electricity to the workpiece; an ion exchanger disposed in at least one of spaces between the workpiece and the processing electrode, and between the workpiece and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a liquid supply section for supplying a liquid to the space between the workpiece and at least one of the processing electrode and the feeding electrode, in which the ion exchanger is present. A substrate processing apparatus having the electrolytic processing device is also provided.

Electrolytic processing device and substrate processing apparatus

A substrate processing apparatus comprises a plating section having a plating bath for holding a plating liquid therein, and a head assembly for holding a substrate and immersing the substrate in the plating liquid in the plating bath. A plated film is formed on a surface of the substrate in the plating liquid. The substrate processing apparatus further comprises a cleaning section for cleaning a peripheral edge of the plated substrate and a substrate contact portion held in contact with the substrate, and a drive mechanism for moving the head assembly between the plating section and the cleaning section.

Substrate processing apparatus

The system includes a polishing pad, a pad height sensor; a window; and a window raising mechanism. The polishing pad has an aperture with the window vertically moveable therein. The pad height sensor is positioned above the polishing pad and measures the vertical position of the pad before polishing. The window raising mechanism adjusts the vertical position of the window based on information from the pad height sensor. An endpoint measurement sensor can be disposed beneath the window for in-situ measurement of the polishing process.

Chemical mechanical polishing endpoint detection system and method

A substrate such as a semiconductor wafer is plated to fill a metal such as copper (Cu) or the like in interconnection grooves defined in the substrate. An apparatus for plating such a substrate has a plating chamber for holding a plating solution, the plating chamber housing an anode that is immersible in the plating solution held by the plating chamber. A plating solution ejector pipe produces an upward jet of plating solution from a plating solution supplied to the plating chamber from an external source, and a substrate holder removably holds a substrate and positions the substrate such that a surface to be plated of the substrate is held in contact with the jet of plating solution. The plating chamber has a plating solution outlet defined in a bottom thereof for discharging a portion of the supplied plating solution via through-holes defined in the anode and/or around the anode out of the plating chamber.

Method and apparatus for plating substrate and plating facility

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Tokyo, Japan

Masayuki Kumekawa