Kabushiki Kaisha Daini Seikosha

Resonac Corporation

Mitsubishi Gas Chemical, Inc.

Hitachi Chemical Company, Ltd. (fipas)

Masayuki Kojima

Nobuhito Komuro

Shinya Oosaki

Shinji Irizawa

Yuta Daijima

Tetsuo Aoyama

Ryuji Hasemi

Ryuji Sotoaka

Hideto Gotoh

Hidetoshi Ikeda

Fukusaburo Ishihara

Tsuyoshi Matsui

Yoshikazu Ohira

Kazusato Hara

Takafumi Tokunaga

Kazuhisa Usuami

Shunji Sasabe

Yoshimi Torii

There are provided a photosensitive resin composition which can be applied to either a projection exposure or direct-write exposure machine without fine adjustment of the composition, and can form a resist pattern having an excellent cross-sectional shape in which an undercut in which the bottom portion of the resist pattern is hollowed and omission of the top of the resist pattern are less likely to occur, and a line width of an intermediate portion (central portion) and a deepest portion (bottom portion) in the depth direction of the cross section of the resist pattern is less likely to be larger than a line width of the surface portion (that is, linearity in the depth direction of the resist pattern contour is favorable), and which has excellent insulation reliability and crack resistance reliability, and a dry film using the same, a printed wiring board, and a printed wiring board manufacturing method. The photosensitive resin composition includes an acid-modified vinyl group-containing epoxy resin (A), a photopolymerization initiator (B), a photopolymerization sensitizer including a benzophenone compound (C), and a photopolymerizable compound (D).

Photosensitive resin composition, dry film using same, printed wiring board, and printed wiring board manufacturing method

There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

Cleaning liquid for semiconductor devices

In a Static Induction Transistor Logic (or an Integrated Injection Logic) semiconductor device having a lateral PNP transistor used as an injector and a longitudinal field effect transistor (or a longitudinal NPN transistor) used as a driving transistor, a collector of a transistor for a level-converter which converts a signal level from an upper layer or first logic level to a lower layer or second logic level is connected to a gate (or a base) of a driving transistor placed in the lower layer through a current limiting element integrated on the same chip to effectively use an injection current in a signal-level converting circuit used in a Static Induction Transistor Logic or in an Integrated Injection Logic which is constructed by using a laminated circuit construction.

Interlevel interface for series powered IIL or SITL

Growing community of inventors

Tokyo, Japan

Masayuki Kojima