Sanyo Electric Co., Ltd.

Masayuki Kawaguchi

Hirotsugu Hata

Satoru Kaneko

Akira Hatsugai

Yasunari Tagami

A lead electrode is formed to expose an active base region. A lead electrode for an emitter electrode is formed on the lead electrode in an emitter region, through an insulating film. The insulating film on the lead electrode is then etched to form a contact hole. After that, the emitter contact hole is formed to expose the lead electrode. Also, a silicon nitride film SN is interposed between the lead electrode and insulating film and between the lead electrode and LOCOS oxide film each to decrease resistance of the lead electrodes.

Semiconductor integration device and fabrication method of the same

A lead electrode (57) is formed to expose an active base region (61). On the lead electrode (57) is formed a lead electrode (64) for an emitter electrode via an insulation film (56). When a base contact hole (65') for exposing the lead electrode (57) and an emitter contact hole for exposing the lead electrode (64) are formed at the same time, total thickness of the insulation film on the lead electrode (64) is thinner than that of the insulation layer on the lead electrode (57), which results in excessive etching on a part of the surface of the lead electrode to form recess. The lead electrode (64) is led out to a LOCOS film to form the emitter contact hole in a region on the LOCOS film to expose the lead electrode (64). Therefore, the recess having been formed on the lead electrode (64) upon forming the emitter contact hole is made to form on the LOCOS film outside the emitter region. The recess prevents depth of the emitter region from dispersing.

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Gunma, Japan

Masayuki Kawaguchi