Idemitsu Kosan Company, Limited

Masayuki Itose

Koki Yano

Mami Nishimura

Masashi Kasami

Misa Sunagawa

Hirokazu Kawashima

Makoto Ando

Shigekazu Tomai

Shigeo Matsuzaki

Kazuaki Ebata

A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 &#x3bc;mor more in an amount of 0.03 vol % or less.

Sintered material, and process for producing same

A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X,

[object Object]

A sputtering target including an oxide A and InGaZnO, the oxide A having a diffraction peak in regions A to K at 2&#x3b8;=7.0&#xb0; to 8.4&#xb0;, 30.6&#xb0; to 32.0&#xb0;, 33.8&#xb0; to 35.8&#xb0;, 53.5&#xb0; to 56.5&#xb0;, 56.5&#xb0; to 59.5&#xb0;, 14.8&#xb0; to 16.2&#xb0;, 22.3&#xb0; to 24.3&#xb0;, 32.2&#xb0; to 34.2&#xb0;, 43.1&#xb0; to 46.1&#xb0;, 46.2&#xb0; to 49.2&#xb0;, and 62.7&#xb0; to 66.7&#xb0;.

In&#x2014;Ga&#x2014;Zn oxide sputtering target and method for producing same

A thin film transistor including an active layer, and has a field-effect mobility of 25 cm/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58&#x2266;In/(In+Ga+Zn)&#x2266;0.68 and 0.15&#x3c;Ga/(In+Ga+Zn)&#x2266;0.29, the region 2 being defined by 0.45&#x2266;In/(In+Ga+Zn)&#x3c;0.58 and 0.09&#x2266;Ga/(In+Ga+Zn)&#x3c;0.20, and the region 3 being defined by 0.45&#x2266;In/(In+Ga+Zn)&#x3c;0.58 and 0.20&#x2266;Ga/(In+Ga+Zn)&#x2266;0.27.

Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn

An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3):0.10&#x2266;In/(In+Ga+Sn)&#x2266;0.60&#x2003;&#x2003;(1)0.10&#x2266;Ga/(In+Ga+Sn)&#x2266;0.55&#x2003;&#x2003;(2)0.0001&#x3c;Sn/(In+Ga+Sn)&#x2266;0.60&#x2003;&#x2003;(3).

In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor element

A sputtering target including an oxide sintered body which includes In, Ga and Zn and includes a structure having a larger In content than that in surrounding structures and a structure having larger Ga and Zn contents than those in surrounding structures.

In&#x2014;Ga&#x2014;Zn&#x2014;O type sputtering target

An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2&#x3b8;) of 7.0&#xb0; to 8.4&#xb0;, 30.6&#xb0; to 32.0&#xb0;, 33.8&#xb0; to 35.8&#xb0;, 53.5&#xb0; to 56.5&#xb0; and 56.5&#xb0; to 59.5&#xb0; in an X-ray diffraction measurement (CuK&#x3b1; rays), and one of diffraction peaks observed at positions corresponding to incident angles (2&#x3b8;) of 30.6&#xb0; to 32.0&#xb0; and 33.8&#xb0; to 35.8&#xb0; is a main peak and the other is a sub peak.

In-Ga-Zn-type oxide, oxide sintered body, and sputtering target

A sputtering target including oxide A shown below and indium oxide (InO) having a bixbyite crystal structure: Oxide A: an oxide which includes an indium element (In), a gallium element (Ga) and a zinc element (Zn) in which diffraction peaks are observed at positions corresponding to incident angles (2&#x3b8;) of 7.0&#xb0; to 8.4&#xb0;, 30.6&#xb0; to 32.0&#xb0;, 33.8&#xb0; to 35.8&#xb0;, 53.5&#xb0; to 56.5&#xb0; and 56.5&#xb0; to 59.5&#xb0; in an X-ray diffraction measurement (CuK&#x3b1; rays).

In&#x2014;Ga&#x2014;Zn type oxide sputtering target

A sintered body including an oxide that includes In, Ga and Zn at the following atomic ratio and includes a compound having as a main component a homologous crystal structure represented by InGaO(ZnO):0.28&#x2266;Zn/(In+Zn+Ga)&#x2266;0.380.18&#x2266;Ga/(In+Zn+Ga)&#x2266;0.28.

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Sodegaura, Japan

Masayuki Itose