Tokyo Electron Limited

Shin-etsu Handotai Co., Ltd.

Tokyo Electron Kabushiki Kaisha

Tokyo Electron Tohoku Limited

Tokyo Electron Tohoku Kabushiki

Masayuki Imai

Genji Nakamura

Yoshihide Tada

Kazuhide Hasebe

Norihiro Kobayashi

Hiroji Aga

Isao Yokokawa

Hiroshi Takeno

Shingo Hishiya

Toshiharu Nishimura

Masahiro Kato

Tatsuo Enomoto

Tsukasa Yonekawa

Anri Nakajima

Takeshi Kurebayashi

Norihito Kaneko

Masaaki Amemiya

Shin Yokoyama

Asami Suemura

A method for manufacturing an SOI wafer includes performing a flattening heat treatment on an SOI wafer under an atmosphere containing an argon gas, in which conditions of SOI wafer preparation are set so that a thickness of an SOI layer of the SOI wafer to be subjected to the flattening heat treatment is 1.4 or more times thicker than that of a BOX layer, and the thickness of the SOI layer is reduced to less than a thickness 1.4 times the thickness of the BOX layer by performing a sacrificial oxidation treatment on the SOI layer of the SOI wafer after the flattening heat treatment.

Method for manufacturing SOI wafer

A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index nof SiOas 1.5, refractive index nof Si as 3.5, and optical thickness tof the silicon oxide filmand the SOI layerin the infrared wavelength region as t=n&#xd7;t+n&#xd7;t, the thickness tof the silicon oxide filmand thickness tof the SOI layer so as to satisfy a relation of 0.1&#x3bb;&#x3c;t&#x3c;2&#x3bb;, and so as to make (tn)/(t&#xd7;n) fall within 0.2 to 3. By nuclei killer annealing carried out before the bonding annealing, density of formation of oxygen precipitate in the base wafer after the bonding annealing is adjusted to less than 1&#xd7;10/cm. This configuration successfully provides a method of manufacturing the SOI wafer having the thin silicon oxide film and the SOI layer, and being less likely to cause warping.

Method of manufacturing SOI wafer and thus-manufactured SOI wafer

The present invention provides a wafer support tool for heat treatment easy in working and capable of realizing reduction in cost without generating damages or slip dislocations that would be otherwise caused by high temperature heat treatment and a heat treatment apparatus. The present invention is directed to a wafer support tool for heat treatment comprising: a plurality of wafer support members for supporting a wafer to be heat treated; and a support member holder for holding the wafer support members, wherein the wafer support members each has a contact portion with the wafer, at least one of the contact portions being movable relative to the support member holder.

Wafer support tool for heat treatment and heat treatment apparatus

A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.

Method of fabricating semiconductor device

A method of forming an insulating film containing silicon oxy-nitride includes a loading step, temperature raising step, oxidation step, cycle purge step, and annealing step, in this order. The temperature raising step is performed while supplying nitrogen gas and oxygen gas for preventing a silicon layer surface from being nitrided, at a supply ratio 100:1 to 1000:1. The oxidation step is performed at a temperature of 700 to 950&deg; C. while supplying a gas that contains 1 to 5 vol % of water vapor and 95 to 99 vol % of nitrogen gas, to form a silicon oxide film. The annealing step is performed at a temperature of 800 to 950&deg; C. while supplying a gas that contains 10 to 100 vol % of nitrogen monoxide gas, to convert a portion of the silicon oxide film into silicon oxy-nitride.

Method and apparatus for forming insulating film containing silicon oxy-nitride

A sample is placed on a sample receiving stage for receiving the sample. The sample is transferred one at a time to a measuring table, and a thickness of a thin film formed on a surface of the sample is measured by irradiating the surface of the sample with a measuring light beam. A covering structure is disposed between the sample receiving stage and the measuring table to define a sample transfer space and a measuring space in which the measuring table is disposed. A high-purity purging gas containing only a very small amount of contaminants is supplied through purging gas supply devices into the transfer space and the measuring space covered with the covering structure.

Film thickness measuring apparatus

A film is formed on a substrate by supplying a plurality of processing gases into a processing container and forming the film on the substrate from the processing gases while exhausting a portion of the gases out of the processing container. Before a partial pressure of a byproduct in the processing container produced through chemical reaction of the processing gases reaches an equilibrium state, the partial pressure of the byproduct in the processing container is temporarily reduced by temporarily suppressing or stopping the supply of at least one of the processing gases into the processing container and exhausting gas from the processing container.

Film forming method wherein a partial pressure of a reaction byproduct

A heat treatment boat for mounting a number of disc-shaped objects to be treated at a vertical interval for heat treatment thereof in a vertical heat treatment furnace comprises arcuate or ring-shaped support members provided on support rods at a vertical interval for supporting the objects to be treated in surface contact with the undersides of peripheral parts of the objects to be treated. The heat treatment boat is disposed on a ring-shaped intermediate member of high radiant heat absorption disposed on a heat insulating cylinder. The heat treatment boat comprises support rods which are planted on an annular support member circumferentially in accordance with a contour of the objects to be treated and whose upper ends are secured to an annular fixation member. The heat treatment boat of such constitution can reduce occurrences of slips in the disc-shaped objects when heat treated.

Heat treatment boat

Growing community of inventors

Annaka, Japan

Masayuki Imai