Tokyo Electron Limited

Masayuki Hirose

Shigeyuki Okura

Daisuke Morisawa

A source gas supply unit includes a carrier gas supply unit for supplying a carrier gas into a raw material tank, and a control unit. The control unit executes steps of: supplying the carrier gas to the raw material tank while varying a flow rate of the carrier gas without forming a film on a substrate, and storing a vaporization flow rate table showing the correspondence between a vaporization flow rate of the vaporized raw material contained in a source gas and a carrier gas flow rate set value; obtaining a carrier gas flow rate set value corresponding to a specified vaporization flow rate set value by using the vaporization flow rate table; and generating the source gas by supplying the carrier gas into the raw material tank based on the obtained carrier gas flow rate set value and supplying the generated source gas to a film forming unit.

Source gas supply unit, film forming apparatus and source gas supply method

A control device is provided that flexibly controls a substrate processing apparatus for each product process. Four process recipes PMto PMare stored in a first storage unit. Corresponding to each of the process recipes, a high temperature, a medium temperature, and a low temperature pre-recipe are stored in a second storage unit. A process recipe determination unitdetermines, in response to a recipe specified by the operator, a process recipe corresponding to the specified recipe from the first storage unit. A stage temperature acquisition unitacquires, from the determined process recipe, a stage temperature. A pre-recipe selection unitselects, from the three types of pre-recipes stored in the second storage unit, one pre-recipe corresponding to the stage temperature. Before the wafer W is deposition-processed, therefore, the PM may be well-conditioned according to the selected pre-recipe.

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Yamanashi, Japan

Masayuki Hirose