Applied Materials, Inc.

Masayuki Hashimoto

Yuji Maeda

Nobuo Tokai

Kunio Kurihara

An object of the present invention is to provide a film-forming method, a film-forming system, etc. capable of achieving adequate thickness repeatability and uniformity and sufficiently large film-forming rates in film formation of a thin film on a substrate to be treated and also capable of simplifying a system configuration. A thermal treatment system according to the present invention is a system for forming a thin film of SiO on an Si wafer W and is provided with a reactant gas exhaust system for reducing the pressure around the Si wafer W, a reactant gas supply system for supplying hydrogen gas Gh and oxygen gas Go so as to mix them, onto the Si wafer W, and a chamber having a lamp group G for heating the Si wafer W, and a wafer support member The Si wafer W is set in the chamber the interior of the chamber is depressurized, the Si wafer W is mounted on the wafer support member the reactant gases X as a mixture of hydrogen gas Gh and oxygen gas Go are supplied into a space Sb in the chamber to flow, and the Si wafer W is heated by the lamp group G.

Method and system for forming film, semiconductor device and fabrication method thereof

A wafer support device which supports a wafer horizontally from below in the process chamber of the semiconductor production device. A plate-shaped susceptor is placed below the wafer so that the plate surface is parallel to the wafer and has at least three through holes passing through it vertically. Lift pins which can each move axially pass through each of the through holes in the susceptor. Protrusions which support the wafer from its lower surface and which form a space between the wafer and the susceptor are installed on the upper ends of the lift pins. In this way reaction gas can flow between the wafer (2) and the susceptor (21) and form a thin film on the bottom surface of the wafer (2) as well as on the top surface.

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Narita, Japan

Masayuki Hashimoto