Hitachi Chemical Company, Ltd.

Resonac Corporation

Showa Denko Materials Co., Ltd.

Masayuki Hanano

Toshio Takizawa

Hisato Takahashi

Haruaki Sakurai

Masaya Nishiyama

Munehiro Oota

Kouji Mishima

Naomi Watanabe

Eiichi Satou

Tomohiro Iwano

Satoyuki Nomura

Shigeru Nobe

Makoto Mizutani

Kanshi Chinone

Shigeru Yoshikawa

Masahiro Sakashita

Yutaka Goh

A polishing liquid includes abrasive grains containing at least one selected from the group consisting of cerium oxide and silicon oxide; a nitrogen-containing compound; and water. The nitrogen-containing compound contains nicotinamide. A polishing liquid set includes constituent components of a polishing liquid stored while being divided into a first liquid and a second liquid. A polishing method includes a step of polishing a surface to be polished by using a polishing liquid.

Polishing liquid, polishing liquid set, polishing method, and defect suppression method

A polishing liquid containing: abrasive grains; a first nitrogen-containing compound; a second nitrogen-containing compound; and water, in which the first nitrogen-containing compound contains at least one selected from the group consisting of (I) a compound having an aromatic ring containing one nitrogen atom in the ring and a hydroxyl group, (II) a compound having an aromatic ring containing one nitrogen atom in the ring and a functional group containing a nitrogen atom, (III) a compound having a 6-membered ring containing two nitrogen atoms in the ring, (IV) a compound having a benzene ring and a ring containing a nitrogen atom in the ring, and (V) a compound having a benzene ring to which two or more functional groups containing a nitrogen atom are bonded, and an HLB value of the second nitrogen-containing compound is 7 or more.

Polishing solution, polishing solution set, polishing method, and defect suppressing method

Provided is a CMP polishing liquid used for removing a part of an insulating portion of a base substrate, which includes a substrate, a stopper provided on one surface of the substrate, and the insulating portion provided on a surface of the stopper opposite to the substrate, by CMP to expose the stopper, the polishing liquid containing: abrasive grains containing cerium; a nonionic water-soluble compound A; a polymer compound B having at least one selected from the group consisting of carboxylic acid groups and carboxylate groups; a basic pH adjusting agent which is optionally contained; and water, in which a content of the basic pH adjusting agent is less than 1.3&#xd7;10mol/kg based on the total mass of the polishing liquid.

Polishing liquid, polishing liquid set and polishing method

A polishing agent containing abrasive grains and water, in which the abrasive grains contain silica particles, an average particle diameter Rof the abrasive grains is 50 nm or more, a ratio R/Rof the average particle diameter Rto an average minor diameter Rof the abrasive grains is 1.0 to 2.0, and a zeta potential of the abrasive grains in the polishing agent is positive.

Polishing agent, stock solution for polishing agent, and polishing method

A polishing agent for polishing a resin comprises abrasive grains, a water-soluble polymer having an ether bond, an organic solvent and water, wherein the abrasive grains have a positive charge in the polishing agent and an average particle diameter of the abrasive grains is larger than 20 nm.

An embodiment of the present invention relates to a CMP polishing liquid used for polishing a polishing target surface having at least a cobalt-containing portion and a metal-containing portion that contains a metal other than cobalt, wherein the CMP polishing liquid contains polishing particles, a metal corrosion inhibitor and water, and has a pH of 4.0 or less, and when the corrosion potential Eof cobalt and the corrosion potential Eof the metal are measured in the CMP polishing liquid, the absolute value of the corrosion potential difference E&#x2212;Ebetween the corrosion potential Eand the corrosion potential Eis 0&#x2dc;300 mV.

CMP polishing liquid and polishing method

A polishing agent for chemomechanically polishing a base having a carbon-based material and an insulating material to remove at least a part of the carbon-based material, the carbon-based material having a carbon content of 60 to 95 atm % as measured by X-ray photoelectron spectroscopy, the polishing agent comprising: an abrasive grain comprising silica; an allylamine-based polymer; and water, wherein a mass ratio of a content of the allylamine-based polymer with respect to a content of the abrasive grain is 0.002 to 0.400, and the abrasive grain has a positive charge in the polishing agent.

Polishing agent, storage solution for polishing agent and polishing method

An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for an ILD film, aggregation of an abrasive grain is difficult to occur, and high flatness is obtained, and provide a polishing method using the same. The polishing liquid for CMP according to the present invention is a polishing liquid for CMP containing an abrasive grain, an additive, and water, wherein the abrasive grain comprises a cerium-based particle, and the additive comprises a 4-pyrone-based compound and at least one of a nonionic surfactant or a cationic surfactant: [wherein X, X, and Xeach independently represent a hydrogen atom or a monovalent substituent].

Polishing liquid for CMP and polishing method using the same

The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

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Tokyo, Japan

Masayuki Hanano