Mitsubishi Electric Corporation

Masayuki Funakoshi

Kenji Ogawa

Takashi Nagao

Kensuke Takeuchi

Katsuhiko Omae

Yusuke Kobayashi

Yuki Okabe

Masaki Matsushita

Hiroyuki Kozuki

Takahiro Okanoue

Norihiro Yamaguchi

Takanobu Kajihara

Atsuki Fujita

Takashi Yagihara

Norio Emi

Takuya Kimura

Takayasu Narukawa

Masaya Tsuneoka

Kento Ogiwara

Takahiro Kunimitsu

A semiconductor module includes a semiconductor switching element, a multiple of bases, on at least one of which the semiconductor switching element is mounted, a molded resin that seals the semiconductor switching element and the multiple of bases, a multiple of terminals formed integrally with each one of the multiple of bases and provided extending from an outer periphery side face of the molded resin, and a recessed portion or a protruding portion having a depth or a height such that creepage distance between the multiple of terminals is secured, and formed so as to cross an interval between the multiple of terminals, in one portion of the outer periphery side face of the molded resin between the multiple of terminals.

Semiconductor module

A semiconductor module such that warping or distortion is prevented, and reliability can be increased, is obtained. The semiconductor module includes a base configuring a multiple of terminals or wires, a semiconductor switching element mounted on a mounting portion of the terminal, and a molded resin that seals the semiconductor switching element, wherein a wide portion having a width greater than that of the terminal or the wire is formed in one portion of the terminal or the wire in an outer peripheral side end portion of the molded resin, and the wide portion is embedded and fixed in an interior of the molded resin in a state extended toward the interior from the outer peripheral side end portion of the molded resin.

A semiconductor device is provided with a heat dissipating face side skirt portion, which is a frame-form projection, on a heat dissipating face of a lead frame. Because of this, creepage distance increases with a small increase in an amount of resin, and insulating properties improve. Also, the heat dissipating face side skirt portion is molded via two transfer molding steps, wettability of the second molding resin with respect to a first molding resin and the lead frame increases, and adhesion improves. Furthermore, an end face of an inner lead is exposed in an element sealing portion on a mounting face side, and covered with a second thin molded portion molded using the second molding resin, whereby heat generated in a semiconductor element can efficiently be caused to escape from faces of both a first thin molded portion and the second thin molded portion, because of which heat dissipation improves.

Semiconductor device, and power conversion device including the semiconductor device

Lands (and) are parts of base plates (and), and electrodes of a shunt resistor (U) are put on and connected to the lands (and). Slits (and) are formed in the lands (and) to separate a main electric circuit in which a main current flows and control terminals (and) with which the electric potentials of the electrodes of the shunt resistor (U) are detected. Leading end portions of the slits (and) extend to the vicinity of the electrodes of the shunt resistor (U).

Semiconductor module having slits and shunt resistor

A first mode in which to output analog electricity quantities of objects one by one independently to an A/D converter, a second mode in which to output none of the analog electricity quantities of the objects, a third mode in which to output none of the analog electricity quantities of the objects and cause the output to the A/D converter to be resistor, and a fourth mode in which to output to the A/D converter a plurality of the analog electricity quantities of the objects at the same time, are caused to be generated, thus acquiring the A/D conversion values of the objects individually when in the first mode, and detecting an anomaly of the A/D converter itself or a device connected to the A/D converter when in the second mode to the fourth mode.

A/D conversion device

Growing community of inventors

Tokyo, Japan

Masayuki Funakoshi