Taiyo Yuden Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Masayuki Fujimoto

Kiyoshi Murase

Nobutatsu Yamaoka

Toshimasa Suzuki

Kenji Ikeda

Kazuyoshi Kobayashi

Hiroshi Takahashi

Kazutaka Suzuki

Keizo Sakiyama

Nobuyoshi Awaya

Yoshiki Iwazaki

Kenichi Ota

Kentaro Morito

Kohji Inoue

Yuji Nishi

Koichiro Isuzuku

Matsuo Nakazawa

Shoichi Sekiguchi

Manabu Satomi

Syuusaku Ueda

There are provided a magnetic thin film utilizing a granular film and having excellent high frequency characteristics and a method of manufacturing the same, and a multilayered magnetic film and magnetic components and electronic equipment utilizing the same. A nonreactive sputtering is performed so that there is no oxidation of a magnetic metal, and a saturation magnetization is increased to increase a resonant frequency of permeability. Also, a multi-target simultaneous sputtering is combined with the nonreactive sputtering so that in a granular structure including magnetic grains and an insulating layer a size of the magnetic grains and a thickness of the insulating layer are optimized thereby ensuring a proper magnitude for a crystalline magnetic anisotropy within the grains and excellent soft magnetic properties. Further, the optimization of the thickness of the insulating layer has the effect of improving a resistivity, decreasing an eddy current and improving an exchange interaction between the magnetic grains.

Granular magnetic thin film and method for making the same, multilayered magnetic film, magnetic components and electronic equipment

There is provided an EPIR device which is excellent in mass productivity and high in practical utility. The EPIR device includes a lower electrode layer, a CMR thin film layer and an upper electrode layer which are laminated in this order on any of various substrates. A Pt polycrystal thin filmforming the lower electrode layer includes columnar Pt crystal grainsA,B,C, . . . and over 90% of these crystal grains is oriented to a (1 1 1) face. Columnar PCMO crystal grain groupsA,B,C, . . . are respectively locally grown epitaxially on the respective outermost surfaces of the Pt crystal grainsA,B,C, . . . . Then, the crystal faces of the crystal grains included in the PCMO crystal grain groupsA,B,C, . . . and vertical in the substrate surface normal direction are any one of (1 0 0), (1 1 0)and (1 1 1)planes.

EPIR device and semiconductor devices utilizing the same

Dielectric thin film, method for making the same and electric components thereof

A composite module and its production process which allow multiple functions, miniaturization, low power consumption and low costs without requiring any external chip parts at all. A high-frequency integrated circuit is embedded in a silicon substrate, a high-frequency high-capacity bypass capacitor and a matching coil using thin films of different types of materials are also formed on the silicon substrate, a high-frequency high-capacity bypass capacitor is further formed with an interlayer insulation film between them, and these elements and the high-frequency integrated circuit are connected via a wiring layer.

Composite module and process of producing same

The present invention relates to a method of manufacturing a circuit module through the use of a wireless bonding technique. In this invention, in order to achieve component assembly without experiencing thermal and mechanical stresses, in the circuit module manufacturing method in which an external electrode of a component and a conductor of a substrate are connected with each other according to the wireless bonding technique, the substrate has a laser beam transmissible property, and after the component is placed on an assembly surface of the substrate, a laser beam is applied from a surface of the substrate opposite to the assembly surface thereof to a connecting spot. The laser beam passing through the substrate heats the connecting spot so that the connection between the external electrode of the component and the conductor of the substrate is made by phase transition or diffusion.

Method of manufacturing circuit module

There is first prepared a mixture of a nitride ceramic material (e.g. aluminum nitride) and a sintering aid (e.g. calcium carbonate), both in finely divided form. Admixed with a binder, the mixture is pressed into moldings of desired shape. The moldings are sintered to maturity in a nitrogenous atmosphere. The sintered moldings are subsequently aftertreated by being exposed to fluorine or its compound at a reduced temperature in the range of, typically, 1000.degree. to 1600.degree. C. The aftertreatment eliminates undesired intergranular substances from the sintered moldings and thus improves their thermal conductivity.

Process for production of nitride ceramic shapes

A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 95.18-99.65 wt. % SrTiO.sub.3, 0.33-3.32 wt. % Ta.sub.2 O.sub.5, and 0.02-1.50 wt. % CuO. The secondary ingredients comprise 0.02-0.10 wt. % part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.50 to 5.0. The insulating substances comprise 0.03-2.75 wt. % PbO, 0.11-4.22 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.

Dielectric ceramic materials with insulated boundaries between crystal

A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative porportions, 94.50-99.62 wt. % SrTiO.sub.3, 0.33-3.00 wt. % Ta.sub.2 O.sub.5, and 0.05-2.50 wt. % ZnO. The secondary ingredients comprise 0.02-0.10 wt. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.03-2.80 wt. % PbO, 0.11-4.38 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.

A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise in relative proportions, 96.70-99.83 wt. % SrTiO.sub.3, 0.15-2.30 wt. % WO.sub.3, and 0.02-1.00 wt. % CuO. The secondary ingredients comprise 0.02-0.10 wt %. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.003-2.83 wt. % PbO, 0.10-4.30 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.

A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 91.18-99.82 wt. % SrTiO.sub.3, 0.13-5.32 wt. % Nb.sub.2 O.sub.5, and 0.05-3.50 wt. % ZnO. The secondary ingredients comprise 0.02-0.10 wt. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.03-2.90 wt. % PbO, 0.11-4.28 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.

A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increse in apparent relative dielectric constant. The primary ingredients comprise in relative proportions, 94.50-99.82 wt. % SrTiO.sub.3, 0.13-2.50 wt. % WO.sub.3 and 0.05-3.00 wt. % GeO.sub.2. The secondary ingredients comprise 0.02-0.10 wt. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.03-2.90 wt. % PbO, 0.10-4.28 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.

A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 90.68-99.88 wt. % SrTiO.sub.3, 0.07-5.32 wt. % Nb.sub.2 O.sub.5, and 0.05-4.00 wt. % GeO.sub.2. The secondary ingredients comprise 0.02-0.10 wt. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.03-2.90 wt. % PbO, 0.11-4.34 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.

A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 95.20-99.80 wt. % SrTiO.sub.3, 0.15-2.30 wt. % WO.sub.3, and 0.05-2.50 wt. % ZnO. The seconary ingredients comprise 0.02-0.10 wt. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.03-2.75 wt. % PbO, 0.11-4.23 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.

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Gunma, Japan

Masayuki Fujimoto