Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Shin-etsu Chemical Co., Ltd.

Central Glass Company, Limited

Other

Wako Pure Chemical Industries, Inc.

Matsushita Electronic Industrial Co., Ltd

Shin-estu Chemical Co., Ltd.

Atsushita Electric Industrial Co., Ltd.

Pd Service Corporation

Masayuki Endo

Masaru Sasago

Shinji Kishimura

Jun Hatakeyama

Yuji Harada

Kazuhiko Maeda

Yoshio Kawai

Michitaka Ootani

Haruhiko Komoriya

Takahiro Matsuo

Masamitsu Shirai

Masahiro Tsunooka

Satoru Miyazawa

Kazufumi Ogawa

Mitsuru Ueda

Akiko Katsuyama

Kentaro Tsutsumi

Fumiyoshi Urano

Jun Watanabe

Hirokazu Imori

Toshiaki Fukuhara

Noboru Nomura

Takeshi Ishihara

Kazuhiro Yamanaka

Hiromi Ohsaki

Kazuhiko Hashimoto

Kousaku Yano

Yoshiyuki Tani

Kazuhiro Yamashita

Tomoyasu Murakami

Tsuyohiko Fujigaya

Kiyoshi Morimoto

Kiyoyuki Morita

Ichiro Yamashita

Shin Hashimoto

Koichiro Yuki

Mikio Nishio

Keiji Oono

Taichi Koizumi

Kiyoshi Araki

Akemi Kawaguchi

Kazuyasu Adachi

Hiroshi Matsuda

Satoshi Kobayashi

Satoko Nakaoka

Toshinobu Ishihara

Katsuya Takemura

Hideo Nakagawa

Tetsuya Ueda

Satoshi Ueda

Teruhito Ohnishi

Masafumi Kubota

Hiroshi Imai

Kenichi Takeyama

Yoshihiko Hirai

Motoshige Sumino

Tsuneaki Maesawa

Hirotoshi Fujie

Yuka Terai

Naoto Matsuo

Michinari Yamanaka

Koji Matsuoka

Masaaki Nakahata

Takaaki Negishi

Takanori Yasuda

Toru Fukumoto

Tokushige Hisatsugu

Keiji Ohno

Toru Kubota

Staoshi Ueda

Takaai Negishi

Ken Ishihara

Mamoru Nagoya

After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.

Pattern formation method

An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.

Exposure system and pattern formation method

After forming a resist film made from a chemically amplified resist material pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that is, an acid generator, and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

After forming an underlying layer film and an intermediate layer film are formed over a substrate, a resist pattern formed by first pattern exposure using a first resist film and second pattern exposure using a second resist film is transferred onto the intermediate layer film. Furthermore, the underlying layer film is etched using the intermediate layer pattern as a mask, thereby obtaining an underlying layer film pattern. The underlying layer film includes as an adduct a fluorine-based surfactant or inorganic nano particles and is provided with a resistance against oxygen-based plasma.

After formation of an underlayer film and an intermediate layer film, a resist pattern formed by the first pattern exposure with the first resist film and the second pattern exposure with the second resist film is transferred to the intermediate layer film. The underlayer film is etched using an intermediate layer pattern as a mask to form an underlayer film pattern. Herein, the first and second resist films are chemically amplified resist films. The second resist film contains a greater amount of additive which improves the sensitivity of the resist or which improves the alkaline solubility of resist exposed part.

A barrier film material includes, in addition to an alkali-soluble polymer, a multivalent carboxylic acid compound having a plurality of carboxyl groups or a multivalent alcohol compound. Thus, the multivalent carboxylic acid compound or the multivalent alcohol compound is adhered onto the surface of a resist film, and hence, particles having been adhered to the surface of the resist film are removed in removing the barrier film. Also, in the case where the barrier film is removed simultaneously with development, the resist film can be prevented from remaining partly undissolved.

Barrier film material and pattern formation method using the same

A resist film is formed on a substrate, and a barrier film including a compound whose alkali-insoluble property is changed to an alkali-soluble property through molecular structure change caused by an alkaline solution is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is performed by selectively irradiating the resist film through the barrier film with exposing light. After the pattern exposure, the barrier film is removed and the resist film is developed. Thus, a resist pattern made of the resist film is formed.

In a pattern formation method employing immersion lithography, after a resist film is formed on a wafer, pattern exposure is performed by selectively irradiating the resist film with exposing light with a liquid including an unsaturated aliphatic acid, such as sunflower oil or olive oil including oleic acid, provided on the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.

Semiconductor manufacturing apparatus and pattern formation method

A resist film is first formed on a substrate. Subsequently, a barrier film including a basic compound of, for example, dicyclohexylamine is formed on the resist film. Thereafter, with an immersion liquid including cesium sulfate provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern in a good shape.

An exposure system includes a liquid supply section for supplying an immersion liquid onto a resist film formed on a substrate; and an exposure section for irradiating the resist film with exposing light through a mask with the immersion liquid provided on the resist film. The liquid supply section includes an immersion liquid tank for circulating the immersion liquid during exposure.

Exposure system and pattern formation method using the same

A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. Ris F or C-Cfluoroalkyl, Ris H or C-Calkyl, Ris O or C-Calkylene, Rand Reach are H or C-Calkyl or fluoroalkyl, and Ris H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer. 

Ester compound, polymer, resist composition, and patterning process

After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern.

In a pattern formation method, a resist film is formed on a substrate, an alkali-soluble first barrier film is formed on the resist film and an alkali-insoluble second barrier film is formed on the first barrier film. Subsequently, with a liquid provided on the second barrier film, pattern exposure is performed by selectively irradiating the resist film with exposing light through the second barrier film and the first barrier film. Then, after removing the second barrier film, the resist film having been subjected to the pattern exposure is developed, so as to remove the first barrier film and form a resist pattern made of the resist film.

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Masayuki Endo