Kabushiki Kaisha Toshiba

Masayuki Dohjo

Akira Kubo

Yasuhisa Oana

Makoto Shibusawa

Tetsuya Iizuka

Mitsushi Ikeda

Kazushige Mori

Hideo Kawano

Tamio Nakai

Katsuhiko Inada

Yasuharu Tanaka

Nobuki Ibaraki

Yoshitaka Kamata

An array substrate includes plural scanning lines (111); a thin film transistor (112) having a first dielectric film (115), (117), a semiconductor film (120) thereon, and a source electrode (126b) electrically coupled to the semiconductor film (120) and a drain electrode (126a); a signal line (110) as taken out of the drain electrode (126a) to extend at substantially right angles to the scanning lines (111); and a pixel electrode (131) electrically connected to the source electrode (126b), wherein the pixel electrode (131) is electrically connected to the source electrode (126b) through a second dielectric film (127) as disposed on at least the signal line (110) while the pixel electrode (131) overlaps an elongate region (113) from its neighboring scanning line (111) through the first and second dielectric films (115), (117), (127). With such an arrangement, an appropriate storage capacitor can be formed by causing the scanning lines and pixel electrode to overlap each other without having to decrease the manufacturing yield while enabling achievement of high aperture ratio.

Array substrate comprising semiconductor contact layers having same

Array substrate for display device and manufacturing method thereof

The present invention provides a display device substrate includes a first wiring layer formed on a substrate made of an insulating material, a second wiring layer formed to cross the first wiring layer, and an insulating film interposed between the first and second wiring layers at a cross point portion therebetween, wherein the first wiring layer is constituted by an electrode wiring layer made of a material containing aluminum as a main component and a surface covering layer formed by causing a refractory metal to denature the electrode wiring layer. The present invention also provides a method of manufacturing a display device substrate in which an electrode wiring layer made of a material containing aluminum as a main component is formed on a substrate made of an insulating material, a thin film made of a refractory metal is formed on the electrode wiring layer, and heat treatment is performed to cause the refractory metal to denature a surface portion of the electrode wiring layer, thereby forming a surface covering layer.

Display device substrate and method of manufacturing the same

Array substrate for displaying device with capacitor lines having

Array substrate with bus lines takeout/terminal sections having multiple

A liquid crystal display device having an array substrate. The substrate has: (1) an insulating transparent substrate that has a pixel region and a non-pixel region, (2) a plurality of thin film transistors disposed in a matrix pattern on a display screen, each thin film transistor having a gate insulating film that is produced by an atmosphere pressure chemical vapor deposition; (3) a plurality of display pixel electrodes formed on the pixel region of the insulating transparent substrate, each display pixel electrode being connected to each of the thin film transistors; and (4) a protecting film formed on the non-pixel region of the insulating transparent substrate, the protecting film extends from the non-pixel region and overlaps a peripheral portion of each of the display pixel electrodes that are disposed in a portion of the display screen by a width of 2 .mu.m to 7 .mu.m. The display also has a counter substrate that is disposed apart from and facing the array substrate. A sealant layer is disposed at peripheries of the array substrate and the counter substrate so as to seal a space between the array substrate and the counter substrate and is provided with a liquid crystal-inlet port. A liquid crystal layer fills in a space between the array substrate and the counter substrate. The liquid crystal layer being injected in the space from the liquid crystal-inlet port. A closing layer is used to close the liquid crystal-inlet port.

Liquid crystal display device with a protecting film that partially

There is provided a semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent. Using this Mo-Ta alloy, there is provided an electrode interconnection material comprising a multi-layered structure having an underlying metal film having a crystalline form of a body-centered cubic system and overlying a molybdenum-tantalum alloy film having a tantalum composition ratio of above 84 atomic percent. Further using this Mo-Ta alloy, there is provided a display device driving circuit substrate comprising an insulating substrate, a plurality of address lines and data lines intersecting each other on the substrate, the address line being formed of a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent, a plurality of thin-film transistors each formed at an intersection of said address and data lines and having its gate electrode connected to an address line and its source electrode connected to data line, and a plurality of display electrodes connected to the drain electrode of the thin-film transistor.

Electrode interconnection material, semiconductor device using this

A thin-film transistor comprising a substrate, a gate electrode formed on said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode, semiconductor film formed on said gate insulation film and contacting the silicon nitride film, and source and drain electrodes formed on the semiconductor film.

Thin-film transistor

Growing community of inventors

Yokohama, Japan

Masayuki Dohjo