Sony Corporation

Suzhou Institute of Nano-tech and Nano-bionics

Masayuki Arimochi

Masao Ikeda

Hiroshi Yoshida

Hui Calvin Yang

Tomonori Hino

Shiro Uchida

Akira Ohmae

Shulong Lu

Xinhe Zheng

Masaru Kuramoto

Katsunori Yanashima

Noriyuki Futagawa

Jugo Mitomo

Nobuhiro Suzuki

Michinori Shiomi

Tomomasa Watanabe

Kota Tokuda

Takashi Tange

Ichiro Nomachi

A light receiving/emitting elementincludes: a light receiving/emitting layerin which a plurality of compound semiconductor layers are stacked; and an electrodehaving a first surfaceA and a second surfaceB and made of a transparent conductive material, in which the second surface faces the first surfaceA, and the electrode is in contact, at the first surfaceA, with the light receiving/emitting layer. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surfaceA of the electrodeis higher than concentration of the additive contained in the transparent conductive material near the second surfaceB of the electrode

Light receiving/emitting element, solar cell, optical sensor, light emitting diode, and surface emitting laser element

A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer.

Multi-junction solar cell, photoelectric conversion device, and compound-semiconductor-layer lamination structure

In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than &#x2212;0.5&#xb0; and not more than 0&#xb0; from an R-plane with respect to a direction of a C-axis.

Method for manufacturing semiconductor device and semiconductor device

Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure.

Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device

Growing community of inventors

Kanagawa, Japan

Masayuki Arimochi