Nuflare Technology, Inc.

Kabushiki Kaisha Toshiba

Masayoshi Yajima

Kunihiko Suzuki

Takuto Umetsu

Yoshikazu Moriyama

Katsumi Suzuki

Kazukuni Hara

Hiroaki Fujibayashi

Shinya Higashi

Hironobu Hirata

Hideki Arai

Kaori Deura

Naohisa Ikeya

Hideki Matsuura

Cover ring of top plate for semiconductor manufacturing apparatus

Top plate for semiconductor manufacturaing equipment

A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.

Film forming apparatus

According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.

Film forming apparatus and film forming method

A manufacturing method for a semiconductor device, including: loading a wafer into a reaction chamber; placing the wafer on a push-up shaft moved up; preheating the wafer under controlling an in-plane temperature distribution of the wafer to be a recess state under a state of placing the wafer on the push-up shaft moved up; lowering the push-up shaft with the wafer kept in the recess state to hold the wafer on a wafer holding member; heating the wafer to a predetermined temperature; rotating the wafer; and supplying a process gas onto the wafer.

Manufacturing method for semiconductor device

A method for manufacturing a susceptor includes: forming a concave pattern in a surface of a substrate to be processed; applying a SiC paste containing a SiC powder and a sintering agent to the surface of the substrate to be processed to fill the concave pattern to form a SiC coating layer; laminating a SiC substrate on the SiC coating layer; and firing the SiC coating layer to form a SiC layer having at least one convex section on the surface of the SiC substrate.

Method for manufacturing susceptor

A manufacturing apparatus for a semiconductor device, includes: a reaction chamber to which a wafer w is loaded; a gas supply port for supplying first process gas including source gas from an upper portion of the reaction chamber; a first rectifying plate for supplying the first process gas onto the wafer in a rectifying state; a first gas exhaust port for exhausting gas from a lower portion of the reaction chamber; a second gas exhaust port for exhausting gas from the upper portion of the reaction chamber; a heater for heating the wafer w; a susceptor for retaining the wafer w; and a rotation drive unit for rotating the wafer w.

Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device

A manufacturing method for a semiconductor device includes retaining a wafer in a reaction chamber, supplying first process gas including source gas and second process gas containing Hor inert gas onto the wafer in a rectified state alternately in a predetermined cycle, rotating the wafer, and heating the wafer to form a film on the wafer.

Growing community of inventors

Kanagawa-ken, Japan

Masayoshi Yajima