Screen Holdings Co., Ltd.

Osaka University

Dainippon Screen Mfg. Co., Ltd.

Aisin Seiki Kabushiki Kaisha

Riken Corporation

Nec Electronics Corporation

Masayoshi Tonouchi

Hidetoshi Nakanishi

Iwao Kawayama

Akira Ito

Kodo Kawase

Tomoya Hirosumi

Makoto Yoshida

Kiyoshi Nikawa

Hideyuki Ohtake

Masatsugu Yamashita

Yuji Sakai

Toshihiro Kiwa

Ryoichi Fukusawa

An inspection apparatus inspects a solar cell. The inspection apparatus includes: a short-circuiting element that electrically connects an anode as a p-type semiconductor layer and a cathode as an n-type semiconductor layer of the solar cell to short-circuit the solar cell; an irradiation part that irradiates the solar cell short-circuited by the short-circuiting element with pulse light; and a detection part that detects an electromagnetic wave emitted from the solar cell in response to the irradiation of the solar cell with pulse light from the irradiation part.

Inspection apparatus and inspection method

There is provided a technique for easily inspecting the modification state of a film in a semiconductor substrate. A modification processing device modifies a film by irradiating a semiconductor substrate with pulsed light emitted from a light irradiation part. The modification processing device includes an electromagnetic wave detection part for detecting an electromagnetic wave pulse including a millimeter wave or a terahertz wave radiated from the semiconductor substrate in response to the irradiation with the pulsed light. The modification processing device further includes a modification determination part for determining the modification state, based on the intensity of the electromagnetic wave pulse.

Modification processing device, modification monitoring device and modification processing method

A photo device inspection apparatus is an apparatus for inspecting a solar cell panel, which is a photo device. The photo device inspection apparatus includes an irradiation part configured to irradiate the solar cell panel with pulsed light radiated from a femtosecond laser, which is a light source, an electromagnetic wave detection part configured to detect a pulse of an electromagnetic wave radiated from the solar cell panel in response to irradiation with the pulsed light, and a current detection part configured to detect a current generated by the solar cell panel in response to irradiation with the pulsed light.

Photo device inspection apparatus and photo device inspection method

An inspecting device includes: an irradiation part for dividing pulsed light emitted from a femtosecond laser into measurement pump light and measurement probe light, to irradiate a solar cell; a detection part for detecting an electromagnetic wave emitted from the solar cell in accordance with the irradiation with the measurement probe light; and a measurement delay part for delaying the time of arrival of the measurement probe light at the solar cell relatively to the measurement pump light. The irradiation part is provided with a galvano mirror for scanning with the measurement probe light a wide range which is wider than an irradiated range (pump light spot) being irradiated with the measurement pump light in a solar cell.

Inspecting device and inspecting method

An inspection apparatus includes an irradiation part that emits plural pieces of pulse light having different wavelengths to irradiate a multi-junction type solar cell; a wavelength setting part that sets the wavelengths of the plural pieces of pulse light with which the multi-junction type solar cell is irradiated by the irradiation part; and a detection part that detects an electric field intensity of an electromagnetic wave emitted from the multi-junction type solar cell in response to the plural pieces of pulse light with which the multi-junction type solar cell is irradiated by the irradiation part. The irradiation part includes a delay element that delays a time the multi-junction type solar cell is irradiated with the pulse light by a time &#x394;trelative to the pulse light.

An inspection apparatus according to an aspect of the present invention inspects a solar cell that is of a photo device. The inspection apparatus includes: an irradiation part that irradiates the solar cell with pulse light emitted from a femtosecond laser that is of a light source; an electromagnetic wave detection part that detects an electromagnetic wave pulse emitted from the solar cell in response to the irradiation of the solar cell with the pulse light; and a PL light detection part that detects photoluminescence light generated in the solar cell in response to the irradiation of the solar cell with the pulse light.

An inspection apparatus is an apparatus for inspecting a solar cell panel. The inspection apparatus includes: an excitation light irradiation part for irradiating the solar cell panel with pulsed light for causing the solar cell panel to radiate an electromagnetic wave pulse; a detection part for detecting the electromagnetic wave pulse radiated from the solar cell panel in response to irradiation with the pulsed light; and a temperature changing part for changing a temperature of the solar cell panel at a part irradiated with the pulsed light.

An inspecting device serves to inspect a solar cell. The inspecting device includes an irradiation part for irradiating with pulsed light and a detection part having a detector for detecting an electromagnetic wave pulse radiated from the solar cell depending on the irradiation with the pulsed light. The detector detects an electric field intensity of the electromagnetic wave pulse depending on irradiation with probe light emitted from a light source (a femtosecond laser) of the pulsed light. Moreover, the inspecting device includes a delay part for delaying a timing for detecting the electromagnetic wave pulse in the detector. Furthermore, the inspecting device includes an electromagnetic wave pulse analysis part for detecting a negative peak of the electric field intensity in a temporal waveform of the electromagnetic wave pulse.

An inspecting device inspects an inspecting target that is a semiconductor device or a photo device. The inspecting device includes: a stage for holding an inspecting target; a femtosecond laser for emitting pulsed light; a galvano mirror for obliquely irradiating the inspecting target with the pulsed light, while changing an optical path of the pulsed light, to scan the inspecting target with the pulsed light; and a detection part for detecting an electromagnetic wave emitted non-coaxially with the pulsed light from the inspecting target in accordance with the illumination with the pulsed light.

An inspection apparatus inspects a photovoltaic cell panel in which the photo device is formed. The inspection apparatus includes: an irradiation part that irradiates the photovoltaic cell panel with pulsed light (pump light) emitted from a femtosecond laser; a detecting part that detects an electromagnetic wave pulse, which is generated from the photovoltaic cell panel according to the irradiation of the pump light; and a continuous light irradiation part that irradiates a portion, which is irradiated with the pump light in the photovoltaic cell panel, with continuous light.

A semiconductor inspection apparatus () is an apparatus for inspecting a semiconductor device. The semiconductor inspection apparatus () includes a pulsed laser light source () for emitting pulsed laser light () toward a substrate () with a semiconductor device formed thereon, an electromagnetic wave pulse application part () for applying a reverses-biasing electromagnetic wave pulse () for applying a reverse bias to an application position () which receives the pulsed laser light (), and a detection part () for detecting an electromagnetic wave pulse () emitted from the application position () in response to the application of the pulsed laser light ().

Semiconductor inspection method and semiconductor inspection apparatus

A technology of inspecting a photoexcited carrier generation area of a photo device in a non-contact manner is provided. An inspection apparatus inspects a photovoltaic cell panel in which the photo device is formed. The inspection apparatus includes an irradiation part that irradiates the photovoltaic cell panel with pulsed light from a light receiving surface side and a detecting part (detector) that detects electric field intensity of a terahertz wave pulse, which is generated according to the irradiation of the pulsed light.

An electromagnetic radiation generating device is a device that generates electromagnetic wave pulses from a plane surface. The electromagnetic radiation generating device includes an electromagnetic radiation generating element, a light irradiating unit. The electromagnetic radiation generating element includes: a depletion layer forming body formed by stacking a p-type silicon layer and an n-type silicon layer in a planar pattern; a light receiving surface electrode formed on one surface of the depletion layer forming body, the light receiving surface electrode including a plurality of parallel electrode parts that are equally spaced while a forming distance is maintained between the parallel electrode parts, the forming distance corresponding to the wavelength of the electromagnetic wave pulses generated from the depletion layer forming body; and a rear surface electrode formed on the opposite surface of the depletion layer forming body.

Electromagnetic radiation generating element, electromagnetic radiation generating device, and method of generating electromagnetic radiation

It comprises a voltage-application apparatusfor applying a predetermined voltage to a semiconductor device, and holding it therein; a laser apparatusfor generating a laser beamhaving a predetermined wavelength; an irradiation apparatusfor irradiating the laser beamonto the two-dimensional circuit of the semiconductor device, which is held in the applied state, so as to scan it two-dimensionally; an electromagnetic-wave detection/conversion apparatusfor detecting an electromagnetic wave, which is radiated from the laser-beam irradiation position, and converting the electromagnetic wave into an electric-field signal, which changes temporally; and phase-judgement means, to which the temporally-changing electric-field signal output from the detection/conversion apparatusis input, for judging the phase of the electric-field signal.

Electric-field distribution measurement method and apparatus for semiconductor device

An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.

Growing community of inventors

Suita, Japan

Masayoshi Tonouchi