Hitachi, Ltd.

Masayoshi Shinoda

Asao Nishimura

Kazuya Takahashi

Toshiaki Morita

Ryoichi Kajiwara

Masahiro Koizumi

Kazutoshi Itou

Akihiko Narisawa

A semiconductor device includes a semiconductor chip and a printed circuit board. Metal electrodes of the semiconductor chip and the internal connection terminals of the printed circuit board are electrically connected through the metallic joining via precious metal bumps. A melting point of a metal material constituting each of the metallic joining parts is equal to or higher than 275 degrees, and a space defined between the chip and the board is filled with resin (under fill) containing 50 vol % or more inorganic fillers.

Flip chip assembly structure for semiconductor device and method of assembling therefor

In a semiconductor device in which an LSI chip comprising electrodes with a 100 &mgr;m pitch or less and 50 or more pins is mounted directly on an organic substrate, a mounting structure and a manufacturing method thereof are provided excellent in the solder resistant reflow property, temperature cycle reliability and high temperature/high humidity reliability of the semiconductor device. Electrode Au bumps of the chip and an Au film at the uppermost surface of connection terminals of the substrate are directly flip-chip bonded by Au/Au metal bonding and the elongation of the bonded portion of the Au bump is 2 &mgr;m or more. The method of obtaining the bonded structure involves a process of supersonically bonding both of the bonding surfaces within 10 min after sputter cleaning, under the bonding conditions selected from room temperature on the side of the substrate, room temperature to 150&deg; C. on the side of the chip, a bonding load of &frac12;S&times;100 MPa to S&times;180 MPa (S: contact area between bump and chip), a loading mode increasing during bonding, and supersonic application time of 50 to 500 ms.

Semiconductor device and manufacturing method thereof

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Kodaira, Japan

Masayoshi Shinoda