Sanyo Electric Co., Ltd.

Masayoshi Ono

Hiroyuki Mori

Tsuyoshi Takahama

Youhei Murakami

Nobuo Hanehira

Shingo Okamoto

Toshio Yagiura

Atsushi Nakauchi

Teruhiko Ienaga

Yoshinobu Takabatake

Takaaki Nakajima

Hidekazu Shuto

Wataru Shinohara

Yasuaki Yamamoto

Takahiro Haga

Masato Nishikuni

Masanori Kaji

Yoshinori Wakamiya

A method for manufacturing a solar cell () includes the steps of removing a resist film () and removing a part of an n-type amorphous semiconductor layer ().

Method of manufacturing solar cell and solar cell

A solar cell () includes a p-type amorphous semiconductor layer (), an n-type amorphous semiconductor layer (), and a recombination layer (R) interposed between the p-type amorphous semiconductor layer () and the n-type amorphous semiconductor layer ().

Solar cell

A method for manufacturing a solar cell () includes the steps of: a step of cleaning an exposed region (R) on a rear surface of an n-type crystalline silicon substrate (), wherein the step is carried out subsequent to a step of patterning an i-type amorphous semiconductor layer () and a p-type amorphous semiconductor layer () and prior to a step of forming an i-type amorphous semiconductor layer ().

Method of manufacturing solar cell

Solar power cell

Solar power module

In this method of solar battery output section fabrication, a metal foil is attached to an output terminal on a substrate surface, or a resin film is disposed over a conductive paste as the output terminal on the substrate surface. Subsequently, an opening is cut-out from the back side of the substrate to the metal foil or the conductive paste with a periphery cutter. Or, after the metal foil and a front side protective film is provided over the output terminal on the substrate surface, an opening is cut-out from the surface of the front side protective film to the metal foil with a periphery cutter.

Method of solar battery output section fabrication

This invention manufactures a photovoltaic device by the following process steps: a step to form a first electrode layer and a light-active semiconductor layer on an insulating surface of the substrate; a step to form a transparent conducting film over most of the insulating surface including the light-active semiconductor layer; a step to establish a patterned transparent protective layer on the transparent conducting film over power generating regions; and a step to irradiate ultraviolet laser light over most of the substrate to remove exposed portions of the transparent conducting film not masked by the pattered transparent protective layer and form a transparent conducting layer corresponding to the pattered transparent protective layer. The patterned transparent protective layer serves a dual purpose as masking material for removing the specified areas of the transparent conducting film by ultraviolet laser and as a transparent protective layer. Accordingly, material that is passed by visible light but not passed by ultraviolet light is used as the patterned transparent protective layer.

Method of manufacturing a photovoltaic device

The solar battery output section has a hole provided through the substrate and through an output terminal formed on the front-side of that substrate. Metal foil is applied covering the hole on the backside of the substrate. The inside of the hole is filled with conducting material to electrically connect the output terminal and the metal foil. Finally, a protective resin film is applied over the substrate, and a wire lead is solder attached to the metal foil on the backside of the substrate.

Solar battery output section and its method of manufacture

A method of manufacturing a photovoltaic device in which a plurality of photovoltaic cells are connected in series on an insulative substrate, includes the steps of: forming on said insulating substrate a plurality of first electrodes (13a, 13b, 13c; 23a, 23b, 23c) having respective first extended portions (13ae, 13be, 13ce; 23ae, 23be, 23ce) (11; 21); covering the plurality of first electrodes with a photo-active semiconductor layer (14; 24); forming a plurality of second electrodes (15a, 15b, 15c; 25a, 25b, 25c) on the semiconductor layer. The second electrodes have respective second extended portions (15ae, 15be, 15ce; 25ae, 25be, 25cd) which overlap the corresponding first extended portions, to thereby the corresponding first electrodes; series connections are formed by causing an energy beam to irradiate regions where the second extended portions overlap the first extended portions.

Growing community of inventors

Sumoto, Japan

Masayoshi Ono