Yamaha Corporation

Masayoshi Omura

Hideki Sato

Yukio Wakui

Kenichi Shirasaka

Hiroshi Saitoh

Hiroshi Adachi

Takayuki Kamiya

Makoto Kaneko

Tamito Suzuki

Kiyoshi Yamaki

Hiroshi Naito

Yukitoshi Suzuki

Satoshi Nihashi

Yuusaku Ebihara

Chihiro Osuga

Tetsuya Mabuchi

Toshihisa Suzuki

Toshiyuki Oohashi

Shoji Yasui

Seiji Hirade

Masaharu Sasaki

Yukio Wakul

A magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming X-axis and Y-axis sensors are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels in the thick film. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.

Magnetic sensor and manufacturing method therefor

An identification mark constituted of irregularities is formed on the surface of a wafer, which is sealed with a resin layer and a dicing tape may be adhered to the backside. Multiple infrared units irradiate infrared rays towards the surface of the wafer from the backside thereof, wherein they transmit through the wafer and are then reflected at the interface between the resin layer and the surface of the wafer, thus producing reflected rays. An image pickup device picks up an image of the interface including the identification mark based on reflected rays. Optical axes of the infrared units extend to cross the surface of the wafer in different directions; hence, the image pickup device receives only a part of reflected rays, which are reflected at the interface in a prescribed direction. A polarizer can be arranged in proximity to the infrared unit or the image pickup device.

Method and apparatus for reading identification mark on surface of wafer

There is provided a small-size magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming an X-axis sensor and a Y-axis sensor are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels formed in the thick film. Regarding the channel formation, it is possible to use the reactive ion etching and high-density plasma CVD methods. In addition, an insulating film is formed between the thick film and passivation film and is used as an etching stopper. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.

An upper electrode of a capacitor has a two-layer structure of first and second upper electrodes. A gate electrode of a MOS field effect transistor and a fuse are formed by patterning conductive layers used to form the lower electrode, first upper electrode and second upper electrode of the capacitor. In forming a capacitor and a fuse on a semiconductor substrate by a conventional method, at least three etching masks are selectively used to pattern respective layers to form the capacitor and fuse before wiring connection. The number of etching masks can be reduced in manufacturing a semiconductor device having capacitors, fuses and MOS field effect transistors so that the number of processes can be reduced and it becomes easy to improve the productivity and reduce the manufacture cost.

Semiconductor device with capacitor and fuse and its manufacture

A magnetic sensor is constituted using magnetic sensor chips mounted on stages supported by interconnecting members and a frame having leads in a lead frame. Herein, the stages are inclined upon plastic deformation of the interconnecting members. When the frame is held in a metal mold and the stages are pressed, the interconnecting members are elastically deformed, so that the magnetic sensor chips are bonded onto the stages placed substantially in the same plane and are then wired with the leads. Thereafter, the stages are released from pressure, so that the interconnecting members are restored from the elastically deformed states thereof. When the magnetic sensor chips are combined together to realize three sensing directions, it is possible to accurately measure three-dimensional bearings of magnetism, and the magnetic sensor can be reduced in dimensions and manufactured with a reduced cost thereof.

Manufacturing method for magnetic sensor and lead frame therefor

The present invention provides a condenser microphone, in which, with a simple manufacturing process, vibration characteristics of a diaphragm are improved, and a parasitic capacitance occurring between the diaphragm and a back plate is reduced, thus improving sensitivity. Specifically, the diaphragm having a gear-like shape including a center portion and a plurality of arms and the back plate having a gear-like shape including a center portion and a plurality of arms are positioned opposite to each other above a substrate, wherein the arms of the diaphragm and the arms of the back plate are not positioned opposite to each other. Alternatively, it is possible to independently support the diaphragm and the back plate above the substrate. Furthermore, it is possible to support the back plate above the substrate by means of a plurality of supports inserted into a plurality of holes formed in the center portion of the diaphragm.

Condenser microphone

An azimuth processing device is designed for outputting azimuth data based on measurement data sequentially output from a compass sensor. In the device, an accumulation section selectively accumulates substantially new pieces of the measurement data. An offset data updating section updates offset data of the compass sensor based on plural pieces of the measurement data accumulated by said accumulation section. An azimuth data output section outputs the azimuth data based on substantially newest measurement data and the offset data.

Azimuth processing device, azimuth processing method, azimuth processing program, direction finding device, tilt offset correcting method, azimuth measuring method, compass sensor unit, and portable electronic device

An electroacoustic transducer serving as a speaker or a microphone is reduced in size and weight and is capable of generating sound with relatively high sound pressure. It is constituted of a housing having a cavity having an opening in the exterior, a fixed electrode positioned opposite to the opening of the housing, a diaphragm having an electrode positioned between the opening and the fixed electrode, and an elastic deformation portion for supporting the diaphragm with respect to the housing and for allowing the diaphragm to vibrate in the thickness direction. The fixed electrode is electrically insulated from the electrode of the diaphragm. The diaphragm is distanced from the fixed electrode by means of the elastic deformation portion placed in the balanced state. When the elastic deformation portion is subjected to elastic deformation, the diaphragm vibrates with relatively large amplitude such that it comes in contact with the fixed electrode.

Electroacoustic transducer

An MEMS transducer is constituted of a diaphragm, a plate, a support structure for supporting the diaphragm and the plate with a gap layer surrounded by an interior wall, an electrode film (e.g. a pad conductive film) for covering a contact hole formed in the support structure, and a protective film (e.g. a pad protective film) which is formed on the support structure externally of the interior wall so as to cover the side surface of the electrode film having low chemical stability. The protective film is formed in the limited area including a part of the surface of the electrode film except for its center portion and the surrounding area of the electrode film. This allows the protective film to use materials having high membrane stress such as silicon nitride or silicon nitride oxide.

MEMS transducer

A physical quantity sensor is constituted using a lead frame having at least one stage and a plurality of leads whose bases are arranged in the same plane, wherein at least one physical quantity sensor chip having a plurality of electrode pads is mounted on the stage and is inclined so that the electrode pads are disposed in the inclination direction and are connected to the leads by use of wires whose lengths substantially match distances between the electrode pads and leads. This prevents the leads and wires from being unexpectedly broken, and it is possible to avoid the occurrence of separation of the leads from the physical quantity sensor chip. In addition, the tip ends of the leads are disposed along the surface of the inclined stage before wire bonding; hence, it is possible to easily connect the tip ends of the leads to the physical quantity sensor chip.

Physical quantity sensor, lead frame, and manufacturing method therefor

A magnetic sensor includes a single substrate, a conventional GMR element formed of a spin-valve film including a single-layer-pinned fixed magnetization layer, and a SAF element formed of a synthetic spin-valve film including a plural-layer-pinned fixed magnetization layer. When the spin-valve film intended to act as the conventional GMR element and the synthetic spin-valve film intended to act as the SAF element are subjected to the application of a magnetic field oriented in a single direction at a high temperature, they become giant magnetoresistive elements whose magnetic-field-detecting directions are antiparallel to each other. Since films intended to act as the conventional GMR element and the SAF element can be disposed close to each other, the magnetic sensor which has giant magnetoresistive elements whose magnetic-field-detecting directions are antiparallel to each other can be small.

Magnetic sensor using giant magnetoresistive elements and methods for manufacturing the same

Semiconductor device with capacitor and fuse and its manufacture method

With regard to a temperature sensor, a control logic circuit conducts control of the temperature sensor. During preparation of the temperature sensor, the control logic circuit reads the result of measurement of the property pertaining to the ambient temperature from the temperature sensor circuit, obtains the initial value and correction value from the result, and stores the pertinent values in the fuse memory. At times of operation of the temperature sensor, the control logic circuit reads the initial value and correction value from the fuse memory, and corrects the measurement values of the temperature sensor circuit using the pertinent values.

Geomagnetic sensor and geomagnetic sensor correction method, temperature sensor and temperature sensor correction method, geomagnetism detection device

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Hamamatsu, Japan

Masayoshi Omura