Denso Corporation

Toyota Jidosha Kabushiki Kaisha

Masayoshi Nishihata

Takuya Kadoguchi

Tomomi Okumura

Takahiro Hirano

Kuniaki Mamitsu

Hiroyuki Wado

Keita Fukutani

Takahisa Kaneko

Chikage Noritake

Toshiki Itoh

Masaya Tonomoto

Eiji Nomura

Takanori Kawashima

Arata Harada

Yuu Yamahira

Kazuya Takeuchi

Shingo Iwasaki

Nobumasa Ueda

Yasushi Ookura

Hiromi Ichijyo

Hiroki Kiyose

Masanori Sakata

Tetsuo Fujii

Takanori Teshima

Noriyuki Kakimoto

Shinji Hiramitsu

Akira Tai

Kazuo Akamatsu

Daisuke Fukuoka

Shota Yoshikawa

Syunsuke Arai

Tomohiro Miyazaki

Syun Sugiura

Ken Sakamoto

A semiconductor device has a joint part in which a first conducting part and a second conducting part are joined by a joint material. The first conducting part has a high wettability region and a low wettability region in a surface opposite to the second conducting part. The low wettability region is adjacent to the high wettability region to define an outer periphery of the high wettability region and has wettability lower than the high wettability region to the joint material. The high wettability region has an overlap region overlapping a formation region of the joint part in the second conducting part in a planar view, and a non-overlap region connected to the overlap region and not overlapping the formation region of the joint part in the second conducting part. The non-overlap region includes a holding region capable of holding the joint material that is surplus for the joint part.

Semiconductor device

In a semiconductor device, a first metal plate faces a first semiconductor element and a second semiconductor element and is electrically connected to a second terminal. A second metal plate faces the first metal plate while interposing the first semiconductor element between the first and second metal plates, and is electrically connected to a first terminal. A third metal plate faces the first metal plate while interposing the second semiconductor element between the first and third metal plates. The first semiconductor element has an electrode on a surface adjacent to the second metal plate and electrically connected to the second metal plate, and an electrode on a surface adjacent to the first metal plate and electrically connected to the third metal plate. The first semiconductor element is thermally connected to the first metal plate while being electrically insulated from the first metal plate by an insulator.

A first module includes a first switch having a first electrode and a second electrode; a second switch having a third electrode and a fourth electrode; a second internal bus bar connecting the second electrode with the third electrode; and a first resin member encapsulating those components. A second module with includes a third switch having a fifth electrode and a sixth electrode; a fourth switch having a seventh electrode and an eighth electrode; a fifth internal bus bar connecting the sixth electrode with the seventh electrode; and a second resin member encapsulating those components. At least one of a first terminal of the second internal bus bar exposed from the first resin member and a second terminal of the fifth internal bus bar exposed from the second resin member extends toward the other and are directly joined with each other.

Power conversion apparatus

First switches include first electrodes, which are mutually connected with each other via a first internal bus bar, and second electrodes, which are mutually connected with each other via a second internal bus bar. A first resin member encapsulates the first switches and the first and second internal bus bars. Second switches include third electrodes, which are mutually connected with each other via a third internal bus bar, and fourth electrodes, which are mutually connected with each other via a fourth internal bus bar. A second resin member that encapsulates the second switches and the third and fourth internal bus bars. The second module is arranged alongside with the first module. The second internal bus bar and the third internal bus bar are partially exposed from the first resin member and the second resin member, respectively, and are directly joined with each other.

A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part.

Semiconductor package having an additional material with a comparative tracking index (CTI) higher than that of encapsulant resin material formed between two terminals

A semiconductor device includes: a plurality of control modules that controls a rotating electric machine. Each control module includes at least two sets of arms, each set including high-side and low-side switching elements that provide an inverter. A plurality of arms of each control module are coupled in parallel to each other with respect to a bus bar coupled to one power source. Each control module includes a metal plate on which the high-side and low-side switching elements are mounted, and mediates an electric coupling with the power source. Each metal plate includes a first metal plate on which one set of arms is disposed, a second metal plate on which another set of arms is disposed, and a coupling plate that couples the first and second metal plates.

A semiconductor device includes: a plurality of control modules to control a rotating electric machine. The plurality of control modules are circularly arranged around a rotary shaft of the rotating electric machine. Each control module includes at least one switching element supplied with a current from a bus bar coupled to a power source. The at least one switching element in one of the control modules under a structural condition of arrangement has a lower resistance than another switching element.

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

A semiconductor device includes: opposed first and second metal plates; a plurality of semiconductor elements each interposed between the first metal plate and the second metal plate; a metal block interposed between the first metal plate and each of the semiconductor elements; a solder member interposed between the first metal plate and the metal block and connecting the first metal plate to the metal block; and a resin molding sealing the semiconductor elements and the metal block. A face of the first metal plate, which is on an opposite side of a face of the first metal plate to which the metal block is connected via the solder member, is exposed from the resin molding. The first metal plate has a groove formed along an outer periphery of a region in which the solder member is provided, the groove collectively surrounding the solder member.

A terminal connection structure includes a male terminal; and a female terminal having an elasticity and configured to have the male terminal fitted therein such that the female terminal sandwiches the male terminal from opposite sides; wherein the male includes a base material, a first primary coat coated on the base material, a second primary coat coated on the first primary coat, and a surface layer coated on the second primary coat, and the first primary coat and the second primary coat have different hardnesses.

Terminal connection structure and semiconductor apparatus

According to the disclosure, a lead frame is provided, which includes: a first island and a second island that are arranged side by side; an outer peripheral frame; first leads that extend in a second direction perpendicular to the first direction; second leads that extend in the second direction; a first coupling portion that couples the first leads to the frame; a second coupling portion that couples the second leads to the frame; an intermediate portion formed between the first and second coupling portions in the first direction such that it extends in the second direction to terminate before the space between the first and second islands; and a deformation restraining portion formed or provided in at least one of the first leads, the second leads, the first and the second coupling portions and configured to restrain deformations of the first and second leads during a molding process.

Lead frame, electric power converting device, semiconductor apparatus and method of manufacturing semiconductor apparatus

A semiconductor apparatus is disclosed, which includes a semiconductor element provided on a plane; a sealing resin that seals the semiconductor element; a terminal that is electrically connected to the semiconductor element and includes a part that projects from a predetermined surface of the sealing resin; and a concave portion that is recessed toward a side of the semiconductor element from the predetermined surface, when viewed in a direction perpendicular to the plane. A side of the concave portion on the side of the semiconductor element includes a rounded shape, when viewed in the direction perpendicular to the plane.

Semiconductor apparatus

A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

Semiconductor device including cooler

A semiconductor device includes a plurality of semiconductor elements each having a front surface and a back surface; a front surface-side heatsink that is positioned on a front-surface side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a back surface-side heatsink that is positioned on a back surface-side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a sealing material that covers the semiconductor device except for a front surface of the front surface-side heatsink and a back surface of the back surface-side heatsink; a primer that is coated on at least one of the front surface-side heatsink and the back surface-side heatsink and improves contact with the sealing member; and a protruding portion positioned between the plurality of semiconductor elements, on at least one of the back surface of the front surface-side heatsink and the front surface of the back surface-side heatsink.

Growing community of inventors

Chiryu, Japan

Masayoshi Nishihata