National Institute of Advanced Industrial Science and Technology

Kla Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Futaba Corporation

Shizuoka University

Masayoshi Nagao

Makoto Yamamoto

Keisuke Koga

Akinori Shiota

Seigo Kanemaru

Yung-Ho Alex Chuang

John Fielden

Yinying Xiao-Li

Katsuhisa Murakami

Shigeo Itoh

Masateru Taniguchi

Edgardo Garcia Berrios

Tomoya Yoshida

Yoichiro Neo

Lavinia Ghirardini

Edgardo García Berríos

An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A contiguous TiN layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the TiN layer.

Electron gun and electron microscope

An electron emission device having a narrow electron energy range and excellent electron emitting efficiency, and an electron microscope using the electron emission device. An electron emission device having a laminated structure in which a first electrode, an electron accelerating layer made of an insulating film, and a second electrode are laminated in this order, in which the second electrode through which electrons transmit and from whose surface electrons emit, and the energy width of the emitted electrons is 100 meV or more and 600 meV or less. For example, graphene having one or more layers and 20 layers or less can be used as the second electrode, and hexagonal boron nitride can be used as the insulating film.

Electron emission device and electron microscope

Provided in the present disclosure is an electron emitting elementincluding a laminated structure in which a first electrode, an electron accelerating layermade of an insulation film, a second electrode, and a cover filmare laminated in that order, in which the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface

Electron emitting element and method for manufacturing same

An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped.

In a field emission device, the fundamental cause of spherical aberration in an emitted electron beam trajectory is eliminated or mitigated. An aberration suppressor electrodeis provided at a lower vertical position than an extraction gate electrodeso its opening inner peripheral edgefaces a position near an emitter tip. The vertical position of the opening inner peripheral edgeof the aberration suppressor electrodeis made lower than the vertical position of the emitter tip. An aberration suppressing voltage Vsp is applied to the aberration suppressor electrodethat is a lower voltage than the potential of the emitterand controls equipotential lines near the emitter tipto make them parallel.

Field emission device

A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.

Field-emission electron source, method of manufacturing the same, and image display apparatus

An image display device is provided in which the overall brightness of an image can be varied without adversely affecting hue and contrast. The image display device includes emittersconnected to a cathode electrode, a gate electrode, an anode electrode, transistors Trand Tr, and a capacitor. A voltage applied to the capacitoris varied to display an image. A constant voltage is applied to the gate electrodeto change a time ratio Du. Thus, the overall brightness of an image can be adjusted.

Field emission display device

A field emission electron source capable of achieving large current density is provided at low cost with good productivity. An insulating layer is formed on a substrate and has one or more openings; and an extraction electrode is formed on the insulating layer. In one or more of the openings, a plurality of emitters, each of which emits an electron by an electric field from the extraction electrode, are formed on the substrate.

Growing community of inventors

Tsukuba, Japan

Masayoshi Nagao