Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Hokuriku Electric Industry Co., Ltd.

Techno Quartz Inc.

Masayoshi Minami

Kazuhiro Harada

Shintaro Kogura

Kazuyuki Okuda

Shogo Otani

Yasuhiro Inokuchi

Yuji Urano

Syuzo Sakurai

Shinya Morita

Yoshitomo Hashimoto

Ryota Sasajima

Kosuke Takagi

Yoshinobu Nakamura

Shingo Nohara

Yasunobu Koshi

Hiromi Okada

Akihito Yoshino

Satoshi Aizawa

Masaya Nishida

Naoko Kitagawa

Masayuki Yamada

Naonori Akae

Takafumi Sasaki

Yuji Takebayashi

Masato Terasaki

Yukinao Kaga

Masayuki Asai

Kazuhiro Yuasa

Yasuhiro Megawa

Risa Yamakoshi

Toshiki Fujino

Masanao Fukuda

Tsutomu Sawai

Toru Harada

Kazuhisa Osaka

There is included (a) loading a substrate where a conductive metal-element-containing film is exposed on a surface of the substrate into a process chamber under a first temperature; (b) supplying a reducing gas to the substrate while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber; (c) forming a first film on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber; and (d) forming a second film on the first film such that the second film is thicker than the first film, by supplying a second process gas, which includes an oxidizing gas, to the substrate under a third temperature higher than the first temperature in the process chamber.

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.

Method of cleaning, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is included (a) forming a film on a substrate by supplying a first processing gas to the substrate in a process container; (b) forming a first pre-coated film, which has a first thickness and has a material different from a material of the film formed in (a), in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and (c) forming a second pre-coated film, which has a second thickness smaller than the first thickness and has the same material as the material of the film formed in (a), on the first pre-coated film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.

Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus and recording medium

There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying an oxygen-containing gas from a pipe made of metal to the substrate in the process container; supplying a nitrogen-and-hydrogen-containing gas from the pipe to the substrate in the process container; and (b) forming a layer on an inner surface of the pipe by supplying a surface treatment gas into the pipe such that the surface treatment gas chemically reacts with the inner surface of the pipe.

Method of manufacturing semiconductor device, surface treatment method, substrate processing apparatus, and recording medium

Method of manufacturing semiconductor device, substrate processing apparatus, recording medium and method of processing substrate

There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas from a first pipe made of metal and a first nozzle to the substrate in the process container; supplying an oxygen-containing gas from a second pipe made of metal and a second nozzle to the substrate in the process container; and supplying a nitrogen-and-hydrogen-containing gas from the second pipe and the second nozzle to the substrate in the process container; and (b) forming a continuous fluorine-containing layer on an inner surface of the second pipe by supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe.

A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.

Gas supply nozzle, substrate processing apparatus, and non-transitory computer-readable recording medium

A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber through a first nozzle; supplying an oxygen-containing gas to the substrate in the process chamber through a second nozzle made of quartz and differing from the first nozzle; and supplying a hydrogen-containing gas to the substrate in the process chamber through the second nozzle. The method further includes, prior to performing the act of forming the film, etching a surface of the second nozzle to a depth which falls within a range of 15 &#x3bc;m or more and 30 &#x3bc;m or less from the surface of the second nozzle.

A force detector capable of preventing short-circuit fault between electrodes and allowing for downsizing. A prescribed region encompasses a projection region defined by projecting a deformation region of a force sensor element, which is deformed when a force transmission member applies a force to the force sensor element, onto a base substrate. A plurality of terminals are provided by four soldering land electrodes formed, respectively, at four corners of the base substrate. The soldering land electrodes are shaped such that a portion of each soldering land electrode is located within the projection region to form a soldering portion.

Force detector

Growing community of inventors

Toyama, Japan

Masayoshi Minami