Sony Corporation

Masayoshi Kanazawa

Kazuhiko Ueda

Yuichi Takagi

Shigeo Ikeda

Makoto Tsuchimochi

Akiyasu Ishitani

Tsuneyoshi Aoki

At least a solid-state imaging device and one or a plurality of bare ICs that are disposed on the back face or on the back face side of the solid-state imaging apparatus and serve as peripheral circuits. The bare ICs are sealed by a resin. A circuit board may be interposed between the solid-state imaging device and the bare ICs, or the solid-state imaging device and the ICs are directly bonded together. According to another aspect, IC chips and other parts as peripheral circuits of a solid-state imaging device are disposed on the inner surface, mainly the ceiling surface, of a light-shielding case. According to a further aspect, a solid-state imaging apparatus for photoelectrically converting, with an imaging device, an image formed by introducing imaging light into the inside of the apparatus is provided with a package having a dark space in itself and accommodating the imaging device in the dark space, and a pinhole for introducing imaging light into the dark space and forming an image of an imaging object on the imaging face of the imaging device.

Solid-state imaging apparatus and camera using the same

At least a solid-state imaging device and one or a plurality of bare ICs that are disposed on the back face or on the back face side of the solid-state imaging apparatus and serve as peripheral circuits are provided. The bare ICs are sealed by a resin. A circuit board may be interposed between the solid-state imaging device and the bare ICs, or the solid-state imaging device and the ICs are directly bonded together. According to another aspect, IC chips and other parts as peripheral circuits of a solid-state imaging device are disposed on the inner surface, mainly the ceiling surface, of a light-shielding case. According to a further aspect, a solid-state imaging apparatus for photoelectrically converting, with an imaging device, an image formed by introducing imaging light into the inside of the apparatus is provided with a package having a dark space in itself and accommodating the imaging device in the dark space, and a pinhole for introducing imaging light into the dark space and forming an image of an imaging object on the imaging face of the imaging device.

A semiconductor device, such as a GaAs FET, has low-noise, ultra-high frequency operation. The semiconductor device has at least one bonding pad for applying potential to the gate electrode lying outside of the source region. In practice, one or more bonding pads are deposited in the general vicinity of the gate electrode and outside of the source region. This allows the number of supply points P to be increased without lengthening the source region and thus expanding the chip. With regard to the drain-gate capacitance, the bonding pad or pads can be surrounded by an electrode other than the drain region electrode or the gate electrode to ensure that the drain-gate capacitance is not increased.

Semi-conductor device

A dual gate field-effect transistor with two diffusion regions of the same conductivity type and a semi-conductive layer of the opposite conductivity type. Each of the diffusion regions has a second diffusion region thereon of the opposite conductivity type diffused at least partly through the same mask to create narrow, controlled channels but with one of the upper diffused regions extending over the edge of the diffused regions below it. The other upper diffused region has an ohmic contact and serves as a source. Two other ohmic contacts are placed on the metal deposited on thin insulating layers directly over edge parts of the first diffused regions to serve as first and second gate electrodes. Another semi-conductive portion, which may be a diffused region of the other conductivity, has an ohmic contact and serves as a drain.

Growing community of inventors

Kanagawa, Japan

Masayoshi Kanazawa