Adv Antest Corporation

Denka Company Limited

Denki Kagaku Kogyo Kabushiki Kaisha

Denko Company Limited

Masayoshi Ichikawa

Hideyuki Emoto

Takahiro Yamaguchi

Ryosuke Kondo

Kazuhiro Ito

Mani Soma

Tomohiro Nomiyama

Minako Yoshida

Shinichi Yanagi

Hiroki Ikeda

Yusuke Takeda

Kazuyuki Maruo

Aritomo Kikuchi

Suzuya Yamada

Ryozo Nonogaki

Go Takeda

Shunsuke Mitani

Katsuhiko Ikeda

Motoi Tanaka

Hisayuki Hashimoto

Hironori Nagasaki

Motonori Kino

Ryosuke Konda

Kiyoshi Fujiwara

Provided is a fluoride phosphor that has a good external quantum efficiency and is suitable for stably producing white LEDs. The fluoride phosphor has a composition represented by a general formula (1) and a repose angle of 30&#xb0; or more and 60&#xb0; or less. general formula: AMF:Mn(1), wherein 0&#x3c;n&#x2264;0.1, the element A is one or more alkali metal elements including at least K, and the element M is a simple substance of Si, a simple substance of Ge, or a combination of Si and one or more elements selected from the group consisting of Ge, Sn, Ti, Zr, and Hf.

Fluoride phosphor and light-emitting device using same

Provided is a fluoride phosphor that has a good external quantum efficiency and is suitable for stably producing white LEDs. The fluoride phosphor having a composition represented by a general formula (1), a bulk density of 0.80 g/cmor more, and a mass median diameter (D50) of 30 &#x3bc;m or less: general formula: AMF:Mn

The purpose of the present invention is to provide a fluoride phosphor (represented by the general formula ASiF:Mn) having high luminescence intensity and reliability, a high-luminance light-emitting device using this phosphor, and a production method for this phosphor. The production method for a fluoride phosphor represented by the general formula ASiF:Mn (where element A is an alkali metal element including at least potassium), wherein the fluoride phosphor production method comprises: a step of preparing an aqueous solution wherein element A and fluorine are dissolved in a solvent; and a step of adding, to the aqueous solution, solid silicon dioxide and a manganese compound that supplies manganese having a valence other than +7; wherein an added amount of the manganese compound is within a range such that an Mn content in the fluoride phosphor becomes at least 0.1 mass % and at most 1.5 mass %; and the fluoride phosphor precipitates as the silicon dioxide concurrently dissolves into the aqueous solution.

Fluorescent fluoride, light-emitting device, and process for producing florescent fluoride

The present invention relates to a process for producing a composite-fluoride fluorescent material represented by the general formula AMF:Mn(wherein A is at least one alkali metal element including K; M is one or more metallic elements including at least Si or Ge and selected from among Si, Ge, Sn, Ti, Zr, and Hf; F is fluorine; and Mn is manganese). With the production process, it is possible to obtain a fluorescent material which is high in absorptance, internal quantum efficiency, and external quantum efficiency and has excellent optical properties.

Process for producing fluorescent material

The purpose of the present invention is to provide a potassium fluoromanganate for use as a raw material for a manganese-activated complex fluoride phosphor, from which a manganese-activated complex fluoride phosphor having good fluorescence properties and reliability can be produced. The potassium fluoromanganate of the present invention is characterized in that, in an orbital electron binding energy spectrum diagram for manganese obtained by X-ray photoelectron spectroscopy, a ratio (signal intensity value A/signal intensity value B) between a signal intensity value A obtained by subtracting a background value from a maximum signal intensity value for binding energy values within the range from 643.0 eV or more to 644.0 eV or less, and a signal intensity value B obtained by subtracting the background value from a maximum signal intensity value for binding energy values within the range from 645.0 eV or more to 646.0 eV or less, is greater than 0 and no greater than 0.9.

Potassium fluoromanganate for use as raw material of manganese-activated complex fluoride phosphor and manganese-activated complex fluoride phosphor production method using same

Provided is a fluoride phosphor having a composition represented by the general formula (1):ASiF:Mn&#x2003;&#x2003;(1)in which A represents at least one alkali metal comprising at least K. The fluoride phosphor has a ratio (A1/A2) of an area (A1) of a spectrum in a range of from 637 eV or more to less than 645 eV in XPS measurement to an area (A2) of a spectrum in a range of from 682.8 eV or more to less than 690 eV in XPS measurement, of 0.0008 to 0.0025.

Fluoride phosphors and light emitting devices using the same

Provided is a method for producing a phosphor, using a nitride raw material, that gives a high-reliability (Sr,Ca)AlSiN-based nitride phosphor at a productivity higher than before. The method comprises a mixing step of mixing raw materials and a calcining step of calcining the mixture obtained in the mixing step and, in producing the phosphor having a crystalline structure substantially identical with that of (Sr,Ca)AlSiNcrystal as the host crystal, a strontium nitride containing SrN, SrN, or the mixture thereof as the main crystalline phase, as determined by crystalline phase analysis by powder X-ray diffractometry, and having a nitrogen content of 5 to 12 mass % is used as part of the raw materials.

Method for producing phosphor

The present invention relates to an Mn-activated complex fluoride phosphor with improved moisture resistance due to modification of the particle surface, and a light emitting element and light emitting device having excellent color rendering properties and stability due to the use of this phosphor. The phosphor of the present invention is characterized in that it is represented by the general formula: AMF:Mn, wherein element A is an alkali metal element comprising at least K, element M is one or more metal elements chosen from among Si, Ge, Sn, Ti, Zr and Hf, F is fluorine, and Mn is manganese, wherein the phosphor comprises Ca in a concentration range of at least 20 ppm and at most 10,000 ppm or Cl in a concentration range of at least 20 ppm and at most 300 ppm.

Phosphor, light emitting element, and light emitting device

The present invention relates to an Mn-activated complex fluoride phosphor with improved moisture resistance due to modification of the particle surface, and a light emitting element and light emitting device having excellent color rendering properties and stability due to the use of this phosphor. The phosphor of the present invention is characterized in that it is represented by the general formula: AMF:Mn, wherein element A is an alkali metal element comprising at least K, element M is one or more metal elements chosen from among Si, Ge, Sn, Ti, Zr and Hf, F is fluorine, and Mn is manganese, wherein the phosphor comprises a Ca-containing compound on a particle surface.

&#x3b2;-SiAlON represented by a general formula SiAlONwith Eu dissolved therein, whose spin density corresponding to absorption g=2.00&#xb1;0.02 at 25&#xb0; C. obtained by the electron spin resonance method is equal to or lower than 6.0&#xd7;10spins/g. A method of manufacturing the &#x3b2;-SiAlON includes: a mixing step of mixing &#x3b2;-SiAlON materials; a baking step of baking the &#x3b2;-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500&#xb0; C. to a baking temperature of the baking step at a rate equal to or lower than 2&#xb0; C./min.; an annealing step of annealing the &#x3b2;-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the &#x3b2;-SiAlON having undergone the annealing step. The objective of the present invention is to provide &#x3b2;-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the &#x3b2;-SiAlON, and a light-emitting device using the &#x3b2;-SiAlON.

&#x3b2;-sialon and method of manufacturing thereof, and light-emitting device

A method of producing &#x3b2;-SiAlON includes a sintering process, in which &#x3b2;-SiAlON starting materials, a mixture of silicon nitride, aluminum nitride, optically active element compound, and at least one compound selected from aluminum oxide and silicon oxide, are sintered at temperatures ranging from 1820&#xb0; C. to 2200&#xb0; C. The method provides new &#x3b2;-SiAlON low in carbon content and having high luminescence intensity by placing a plurality of boron nitride vessels in a graphite box to allow the &#x3b2;-SiAlON starting materials packed in the plurality of boron nitride vessels to easily come in contact with nitrogen gas, and performing sintering in nitrogen atmosphere.

Method of producing &#x3b2;-SiAION, &#x3b2;-SiAION, and products using the same

Provided is a production method of a &#x3b2;-type sialon fluorescent substance, where luminescence intensity can be improved without adding a metal element other than elements composing a &#x3b2;-type sialon fluorescent substance. Namely, in a production method of a fluorescent substance containing an optically-active element as the luminescence center in a crystal of nitride or acid nitride, a &#x3b2;-type sialon fluorescent substance is produced by a burning process for heat-treating a mixture including metal compound powder and an optically-active element compound; a high-temperature annealing process for heat-treating the burned product after cooling under a nitrogen atmosphere; a rare-gas annealing process for heat-treating the high-temperature annealed product under a rare gas atmosphere; and a process for treating the rare-gas treated product with an acid.

Process for producing &#x3b2;-sialon fluorescent material

An abnormality detecting apparatus includes an imaging device for obtaining image data of a TIM, a failure detecting section for detecting appearance failures of the TIM on the basis of the image data of the TIM obtained by the imaging device, and a determining device for determining whether an abnormality occurs at the TIM on the basis of a detection result by the failure detecting section.

Abnormality detecting apparatus for detecting abnormality at interface portion of contact arm

An electronic device testing apparatus for conveying electronic devices to be tested to sockets of a contact portion and bringing the electronic devices to be tested electrically contact with the sockets to conduct a test of electric characteristics of the electronic devices to be tested, comprising an image pickup portion that takes an image of the sockets; a memory portion that stores reference image data of the sockets in a state of not being attached with any electronic devices to be tested obtained by taking images by the image pickup portion; and a mislay determination portion that obtains check image data of the sockets from the image pickup portion, reads the reference image data from the memory portion, compares the check image data with the reference image data and determines whether any of the electronic devices to be tested remain on the sockets.

Electronic device testing apparatus

There is provided a position detection apparatus for detecting position of an image pickup device that outputs an output signal corresponding to intensity of detected light, having a light source for generating light, an illumination lens for illuminating the light generated by the light source onto the image pickup device, a position detecting section for detecting relative position of the image pickup device with respect to the illumination lens based on the output signal outputted out of the image pickup device corresponding to the light received via the illumination lens and a moving section for changing the relative position of the image pickup device to position set in advance by moving at least one of the image pickup device and the illumination lens based on the relative position detected by the position detecting section.

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Tokyo, Japan

Masayoshi Ichikawa