Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Masayoshi Hirao

Kazushige Matsuo

Shigeo Tooi

Katsumi Satou

Akira Okada

Kazutoyo Takano

Masaki Ueno

Junji Yahiro

Reona Furukawa

An input capacitance measurement circuit includes a transformer, a first capacitor, a second capacitor, and a third capacitor. A primary wire of the transformer has a first end provided so as to be connectable to an anode of the semiconductor device. The primary wire of the transformer has a second end connected to a first end of the first capacitor. A secondary wire of the transformer has a first end provided so as to be connectable to a cathode of the semiconductor device. The secondary wire of the transformer has a second end connected to a first end of the second capacitor. The third capacitor has a first end provided so as to be connectable to the cathode of the semiconductor device. A second end of the first capacitor, a second end of the second capacitor, and a second end of the third capacitor are electrically connected to each other.

Input capacitance measurement circuit and method of manufacturing semiconductor device

A semiconductor device according to the present invention includes a substrate having a cell portion and a terminal portion surrounding the cell portion, a surface structure provided on the substrate, and a back surface electrode provided on the back surface of the substrate, the surface structure includes a convex portion protruding upward above the cell portion, and at least a part of the cell portion is thinner than the terminal portion.

Semiconductor device and method for manufacturing same

A wound wire is wound around a core assembly so that both ends are short-circuited. In a coupling pin insertion state in which a coupling pin is inserted in a through hole of the core assembly, outer-peripheral space parts of respective divided core portions of the core assembly are disposed so as to overlap in plan view. Consequently, an air gap is formed in a part of a side surface of the core assembly. Before formation of a covering member, a main wire is caused to pass through the air gap and is thus disposed in a wiring hole of the core assembly. Then, the covering member for closing the air gap is provided on an outer peripheral surface side of the core assembly including the air gap so that a core structure is obtained.

Wiring core structure, semiconductor evaluation device and semiconductor device

A switching chip using silicon as the base material is located on the upper surface of a cooling mechanism formed of a heat sink, an insulating substrate and a conductive plate, with a first conductive layer sandwiched in between. Further, a diode chip having a smaller area than a cathode electrode and using a wide gap semiconductor as the base material is located on the cathode electrode which has a smaller area than an anode electrode, with a second conductive layer sandwiched in between. A closed container encloses every structural component except an exposed portion of a bottom surface in the interior space.

Semiconductor device with semiconductor chip formed by using wide gap semiconductor as base material

A switching chip () using silicon as the base material is located on the upper surface of a cooling mechanism formed of a heat sink (), an insulating substrate () and a conductive plate (), with a first conductive layer (A) sandwiched in between. Further, a diode chip () having a smaller area than a cathode electrode () and using a wide gap semiconductor as the base material is located on the cathode electrode () which has a smaller area than an anode electrode (), with a second conductive layer (B) sandwiched in between. A closed container () encloses every structural component except an exposed portion of a bottom surface (BS) in the interior space.

A switching chip ( ) using silicon as the base material is located on the upper surface of a cooling mechanism formed of a heat sink ( ), an insulating substrate ( ) and a conductive plate ( ), with a first conductive layer ( A) sandwiched in between. Further, a diode chip ( ) having a smaller area than a cathode electrode ( ) and using a wide gap semiconductor as the base material is located on the cathode electrode ( ) which has a smaller area than an anode electrode ( ), with a second conductive layer ( B) sandwiched in between. A closed container ( ) encloses every structural component except an exposed portion of a bottom surface ( BS) in the interior space.

A balance resistance is connected to each probe pin and a probe card check wire is provided on each probe pin, and thus a wafer test and chip test with application of high current can be performed, and further, a maintenance of a probe card is facilitated.

Growing community of inventors

Fukuoka, Japan

Masayoshi Hirao