National Institute of Advanced Industrial Science and Technology

Funai Electric Advanced Applied Technology Research Institute Inc.

Funai Electric Company Ltd.

Masayo Horikawa

Tetsuo Shimizu

Yasuhisa Naitoh

Shigeo Furuta

Tsuyoshi Takahashi

Masatoshi Ono

Yuichiro Masuda

Hidekazu Abe

Yasuhisa Naitou

Hiroshi Suga

Wataru Mizutani

Yukinori Morita

Yasushisa Naitoh

The present invention is contemplated for providing a resistance switching device having a very small device size of approximately 20 nm&#xd7;20 nm in its entirety, by taking advantage of a small diameter of a multilayered carbon nanotube or a multilayered carbon nanofiber per se, via a simpler manner that does not require any molecule inclusion step, with an excellent electric conductivity. Provided is a two-terminal resistance switching device, which has multilayered carbon nanofibers or multilayered carbon nanotubes disposed with a nano-scale gap width therebetween.

Two-terminal resistance switching device and semiconductor device

A switching element comprising: an insulative substrate; a first electrode and a second electrode provided on one surface of the insulative substrate; and an interelectrode gap which is provided between the first electrode and the second electrode, and which has a gap on the order of nanometers in which switching phenomenon of resistance occurs by applying predetermined voltage between the first electrode and the second electrode, wherein the one surface of the insulative substrate contains nitrogen.

Switching element

A switching elementincludes an insulating substrate, a first electrodeprovided on the insulating substrate, a second electrodeprovided on the insulating substrate, and an interelectrode gapprovided between the first electrodeand the second electrode, a distance G between the first electrodeand the second electrodebeing 0 nm&#x3c;G&#x2266;50 nm.

Switching element relying on nanogap electrodes

A two-terminal resistance switching element, wherein two silicon films each doped with an impurity are arranged with a gap width in the order of nanometers. The gap width is in the range of from 0.1 nm to 100 nm. A semiconductor device can be obtained by providing the two-terminal resistance switching element in a memory, a storage device or other device.

Two-terminal resistance switching element with silicon, and semiconductor device

A nanogap switching element is equipped with an inter-electrode gap portion including a gap of a nanometer order between a first electrode and a second electrode. A switching phenomenon is caused in the inter-electrode gap portion by applying a voltage between the first and second electrodes. The nanogap switching element is shifted from its low resistance state to its high resistance state by receiving a voltage pulse application of a first voltage value, and shifted from its high resistance state to its low resistance state by receiving a voltage pulse application of a second voltage value lower than the first voltage value. When the nanogap switching element is shifted from the high resistance state to the low resistance state, a voltage pulse of an intermediate voltage value between the first and second voltage values is applied thereto before the voltage pulse application of the second voltage value thereto.

Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element

A non-volatile memory devicecontains: an insulating substrate; a first electrodeprovided on the insulating substrate; a second electrodeprovided on the insulating substrate; and a gapset between the first electrodeand the second electrode, in which a distance G between the first electrodeand the second electrodeis: 0 nm&#x3c;G&#x2266;50 nm.

Growing community of inventors

Tsukuba, Japan

Masayo Horikawa