Seiko Epson Corporation

Kabushiki Kaisha Toshiba

California Institute of Technology

Masayasu Miyata

Yuichiro Mitani

Tatsuo Shimizu

Yoshihiko Moriyama

Hirotaka Nishino

Masamitsu Uehara

Akira Takashima

Daisuke Matsushita

Yasushi Nakasaki

Koichi Kato

William A Goddard, Iii

Yuji Shinohara

Misako Morota

Izumi Hirano

Jamil Tamir-Kheli

A semiconductor device according to an embodiment includes a first electrode; a second electrode; a gate electrode; an n-type first silicon carbide region positioned between the first electrode and the second electrode and between the gate electrode and the second electrode; a p-type second silicon carbide region positioned between the first electrode and the first silicon carbide region; a third silicon carbide region of metal containing at least one element selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt), positioned between the first electrode and the second silicon carbide region and spaced apart from the first silicon carbide region; and a gate insulating layer positioned between the gate electrode and the second silicon carbide region.

Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

A semiconductor device according to an embodiment includes a metal layer; an n-type first silicon carbide region; and a second silicon carbide region of metal containing at least one element selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt) and positioned between the metal layer and the first silicon carbide region.

A nonvolatile semiconductor memory according to an embodiment includes: a semiconductor region; a first insulating film formed on the semiconductor region; a charge storage film formed on the first insulating film; a hydrogen diffusion preventing film formed on the charge storage film; a second insulating film formed on the hydrogen diffusion preventing film; a control gate electrode formed on the second insulating film; a hydrogen discharge film formed on the control gate electrode; and a sidewall formed on a side surface of a multilayer structure including the first insulating film, the charge storage film, the hydrogen diffusion preventing film, the second insulating film, and the control gate electrode, the sidewall containing a material for preventing hydrogen from diffusing.

Nonvolatile semiconductor memory

A semiconductor deviceincludes: a basemainly formed of a semiconductor material; a gate electrode; and a gate insulating filmprovided between the baseand the gate electrode. The gate insulating filmis formed of an insulative inorganic material containing silicon, oxygen and element X other than silicon and oxygen as a main material. The gate insulating filmis provided in contact with the base, and contains hydrogen atoms. The gate insulating filmhas a region where A and B satisfy the relation: B/A is 10 or less in the case where the total concentration of the element X in the region is defined as A and the total concentration of hydrogen in the region is defined as B. Further, the region is at least apart of the gate insulating filmin the thickness direction thereof.

Semiconductor device, an electronic device and an electronic apparatus

A light emitting device having excellent characteristics such as light emitting efficiency and the like and electrical equipment provided with such a light emitting device and having high reliability are provided. The light emitting device includes a light emitting layerformed of a first organic semiconductor material, a hole transport layer (carrier transport layer)formed of a second organic semiconductor material and provided in contact with the light emitting layer, and particlesprovided in contact with both the light emitting layerand the hole transport layer, wherein an entire of or a part of each of the particlesis embedded in the light emitting layer (the other layer)so that the particlescan contain the second organic semiconductor material (organic semiconductor material which constitutes the other layer).

Light emitting device and electronic equipment provided with the light emitting device

A method for manufacturing a semiconductor device comprises preparing a base; forming a silicon oxide film including hydrogen or deuterium on the base; diffusing nitrogen into the silicon oxide film to form a gate insulating film; forming a gate electrode on the gate insulating film; ion doping the base to form source and drain regions along side a channel region; and forming a source electrode connected to the source region and a drain electrode connected to the drain region, the gate insulating film having a region where B/A is in the range of 1.6 to 10, where A is a concentration of nitrogen, and B is a concentration of hydrogen or deuterium, and the region is Y/10 of the thickness of the gate insulating film from the interface between the gate insulating film and the base, where Y is an average thickness of the gate insulating film.

Methods for detecting the breakdown potential of a semiconductor device having a thin dielectric layer are disclosed. The method includes measuring a spectroscopy of the thin dielectric layer and determining whether the spectroscopy exhibits the presence of a breakdown precursor (H, H interstitial radical, H attached radical, and H attached dimer). Preferably, the method is carried out in the presence of a substantially significant applied electric field across dielectric layer. A semiconductor device tested in accordance with this method is also disclosed. Additionally, methods for reducing dielectric breakdown of a semiconductor device having a thin dielectric layer involving the substitution of a second molecule for Hmolecules present in the dielectric. This second molecule preferably does not react with Si or O to form an undesired attached state and may be an inert gas having a molecular size approximating that of a Hydrogen atom, such as Helium. A semiconductor device made using this method is also disclosed.

Detection and reduction of dielectric breakdown in semiconductor devices

A gate insulating filmis formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating filmcontains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cmis less than both the absorbance of infrared radiation at the wave number of 830 cmand the absorbance of infrared radiation at the wave number of 900 cmwhen the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature. Further, in the case where the absolute value of the difference between the absorbance of infrared radiation at the wave number of 830 cmand the absorbance of infrared radiation at the wave number of 770 cmis defined as A and the absolute value of the difference between the absorbance of infrared radiation at the wave number of 900 cmand the absorbance of infrared radiation at the wave number of 990 cmis defined as B, then A and B satisfy the relation: A/B is 1.8 or more.

Method for evaluating a gate insulation film characteristic for use in a semiconductor device

A method of evaluating characteristics of an insulating filmis disclosed. The insulating filmis formed of an insulative inorganic material as a main material, the insulative inorganic material containing silicon and oxygen. The insulating filmfurther contains hydrogen atoms. The method includes the steps of: analyzing the insulating filmto which an electric field has never been applied by Thermal Desorption Spectroscopy; comparing intensity of an Hfragment with intensity of an OH fragment, the intensity of the Hfragment and the intensity of the OH fragment being measured at a state where the insulating filmis heated at a temperature in the range of 500 to 1000&#xb0; C.; and evaluating the characteristics of the insulating filmon the basis of the comparison result.

Method of evaluating characteristics of and forming of an insulating film for a semiconductor device

An semiconductor device () of the invention includes a semiconductor substrate provided with a channel region (), a source region () and a drain region (), a gate insulating film () laminated on the channel region (), and a gate electrode (). The gate insulating film () is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cmis 0.02 or less when the gate insulating film () to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.

Growing community of inventors

Kawasaki, Japan

Masayasu Miyata