Kabushiki Kaisha Toyota Chuo Kenkyusho

Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Masayasu Ishiko

Jun Saito

Sachiko Kawaji

Hideo Hasegawa

Hiroyuki Mori

Tsutomu Uesugi

Takahide Sugiyama

Kazuyuki Nakanishi

Hideo Tachikawa

Yasushi Yamada

Hiroyuki Ueda

Tadashi Oshima

Koji Hotta

Takashi Suzuki

Tsuyoshi Nishiwaki

Masanori Usui

Masato Taki

Yukihiro Hisanaga

Masato Noborio

Yukio Miyachi

Kiyoharu Hayakawa

Hidehiro Nakagawa

Toshio Murata

Masahiro Kawakami

Sachiko Tanaka

Hirokazu Saito

A semiconductor device comprises: a cell region that includes a semiconductor element; an outer peripheral region that surrounds an outer periphery of the cell region; a substrate that has a front surface and a back surface, and is made of a semiconductor of a first or second conductivity type; a first conductivity layer that is formed on the front surface of the substrate and made of the semiconductor of the first conductivity type having a lower impurity concentration than impurity concentration of the substrate; a first electrode that is provided on an opposite side of the substrate across the first conductivity layer, the first electrode being provided in the semiconductor element; and a second electrode that is placed toward the back surface of the substrate, the second electrode being provided in the semiconductor element.

Semiconductor device and manufacturing process therefor

A diodecomprises an SOI substrate in which are stacked a semiconductor substrate, an insulator film, and a semiconductor layer. A bottom semiconductor region, an intermediate semiconductor region, and a surface semiconductor regionare formed in the semiconductor layer. The bottom semiconductor regionincludes a high concentration of n-type impurity. The intermediate semiconductor regionincludes a low concentration of n-type impurity. The surface semiconductor regionincludes p-type impurity.

Lateral SOI semiconductor devices and manufacturing method thereof

A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 &#x3bc;m or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.

Semiconductor device and a method for producing the same

The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region () whose potential is floating is formed within a ptype body region (). The n type semiconductor region () is isolated from an ntype emitter region () and an ntype drift region () by the body region (). Furthermore, a second electrode () is formed, so as to oppose to at least a part of the semiconductor region () via an insulator film (). The second electrode () does not oppose to the emitter region ().

Semiconductor devices

A semiconductor element heat dissipating member is provided which has excellent heat dissipation characteristics and adhesion characteristics and enables production of a semiconductor device at a low cost. A semiconductor device using the same, and a method of producing the same are also provided. The semiconductor element heat dissipating member has a conductive substrate and an electrically insulating amorphous carbon film containing hydrogen, and the electrically insulating amorphous carbon film is formed at least on a region of the conductive substrate on which region a semiconductor element is to be mounted.

Semiconductor element heat dissipating member, semiconductor device using same, and method for manufacturing same

The MOS gate thyristor of the present invention has a p,type anode layer (first semiconductor layer), an n,type base region (second semiconductor layer) with the function of acting as a drift layer, a p,type base region (third semiconductor layer), and an n,type impurity diffusion layer (fourth semiconductor layer) with the function of acting as a source region. On the surface of the base region, an n,type floating emitter region (fifth semiconductor layer) is formed, while a first channel region (sixth semiconductor layer) is formed between the impurity diffusion layer and the floating emitter region. At the lower ends of the fourth semiconductor layer and the first channel region an insulation layer is formed. The insulation layer acts to suppress the operation of a parasitic thyristor to ensure a reliable turn-off operation of the transistor. A portion of the semiconductor extends from the n,type floating emitter region and lies underneath the insulation layer in the direction alongside the principal plane of the p,type anode layer. The extended semiconductor portion helps broaden the carrier injection path.

Semiconductor device

Growing community of inventors

Nagoya, Japan

Masayasu Ishiko