Sony Corporation

Masaya Uematsu

Tohru Ogawa

A semiconductor storage device includes: a bit line; a first word line; a second word line; a first inverter in which one terminal of a first load transistor is connected to a first driver transistor and their junction point forms a first node; a second inverter in which one terminal of a second load transistor is connected to a second driver transistor and their junction point forms a second node; a first write transistor one terminal of which is connected to the first load transistor and the other terminal of which is connected to a power supply voltage; a second write transistor one terminal of which is connected to the first driver transistor and the other terminal is connected to a reference potential; and an access transistor one terminal of which is connected to the first node and the other terminal of which is connected to the bit line.

Semiconductor storage device and operation method thereof

A photomask is proposed which comprises a transparent substrate and a light shielding film formed on a principal surface of the substrate, with the light shielding film having an aperture pattern thereon. And, a recess is provided at the portion of the transparent substrate which is exposed in the bottom of the aperture pattern. The dimension of the recess is larger than that of the aperture, and a peripheral portion of each of the aperture pattern of the light shielding film is configured as an eaves-like extension in response to the density of a neighboring pattern of the aperture pattern.

Photomask

A pattern formation method and method and apparatus for production of a semiconductor device using that method which irradiate light from a light source to a phase shifting mask through a fly's-eye lens comprised of an assembly of a plurality of lenses, transfer the pattern of the phase shifting mask onto the substrate, and form the pattern on the substrate, wherein the amount of light made incident upon the center portion of the fly's-eye lens is lowered by 2 to 90 percent, preferably 10 to 90 percent, further preferably 20 to 80 percent or 20 to 60 percent, relative to the amount of light incident upon the peripheral portion of the fly's-eye lens.

Pattern formation method and method and apparatus for production of a semiconductor device using said method

A process of forming a pattern on a substrate by irradiating light for exposure from a light source to a mask to transfer the pattern of this mask onto the substrate, wherein, before forming the intended final pattern on the substrate, exposure is carried out with an inspection pattern to a diagnostic region in which the final pattern is not to be formed, the distribution of the intensity of light irradiated to the diagnostic region is found, and at least the secondary peak of this distribution of the light intensity is observed, whereby the light source conditions are optimized and the optimized condition light source is used for forming the pattern.

Growing community of inventors

Kanagawa, Japan

Masaya Uematsu