Kabushiki Kaisha Toshiba

Joled Inc.

Toshiba Memory Corporation

Masaya Terai

Koji Asakawa

Shigeki Hattori

Hideyuki Nishizawa

Yoshiaki Fukuzumi

Tsukasa Tada

Satoshi Mikoshiba

Reika Ichihara

Hideaki Aochi

Hiroyuki Fuke

Misako Morota

Masakazu Yamagiwa

Kenji Harada

Reiko Yoshimura

Akifumi Okigawa

Keiji Horikawa

Takatoshi Watanabe

Wangying Lin

An organic EL display panel manufacturing method includes preparing a substrate. The method further includes forming a plurality of organic EL elements on the substrate. The method further includes deaerating a sealing solution with use of a filter that allows only gases to pass through, the sealing solution including an organic electrically-insulating material to which an electrically-conductive substance is added. The method further includes applying the sealing solution after the deaerating above the organic EL elements and thereby forming a sealing layer.

Organic EL display panel manufacturing method and sealing layer forming device

An organic electroluminescence (EL) display panel includes a multi-layered wiring laminate disposed on a substrate and including insulating layers and wiring disposed on at least one of the insulating layers and extending to a vicinity of an outer periphery of the wiring laminate; an organic EL element array disposed on the wiring laminate; a first inorganic insulating layer disposed on the array and extending outside the outer periphery of the wiring laminate in plan view; a resin sealing layer disposed on the first inorganic insulating layer, covering the array in plan view, and having an outer periphery above a resin insulating layer that is a highest layer among the insulating layers; a second inorganic insulating layer disposed on the resin sealing layer, extending outside the outer periphery of the resin sealing layer in plan view, and being in contact with the first inorganic insulating layer in a thickness direction.

Organic EL display panel

A semiconductor memory device according to an embodiment includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode, and the organic molecular layer having an organic molecule that includes a molecular structure described by a molecular formula (1): 

Semiconductor memory device

A semiconductor memory device in an embodiment includes a semiconductor layer, a control gate electrode, an organic molecular layer provided between the semiconductor layer and the control gate electrode, and a first insulating layer provided between the organic molecular layer and the semiconductor layer, the first insulating layer having a first layer containing alkyl chains and a second layer containing siloxane, the second layer being provided between the first layer and the organic molecular layer.

Semiconductor memory device and method for manufacturing the same

A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1). 

Nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.

An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.

Organic molecular memory

According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

Nonvolatile semiconductor memory device and method for manufacturing same

A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.

Nonvolatile semiconductor storage device having a charge storage layer that includes metal grains

Nonvolatile semiconductor memory device and method of manufacturing the same

A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.

A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating layer; an organic molecular layer, which is formed between the semiconductor layer and the block insulating layer, and contains first organic molecules and second organic molecules, and in which the first organic molecule has a first alkyl chain or a first alkyl halide chain on the semiconductor layer side and a charge trapping unit on the block insulating layer side, and the second organic molecule has a second alkyl chain or a second alkyl halide chain on the semiconductor layer side and a hydroxy group, an ether group, a carboxyl group or an ester group on the block insulating layer side; and a control gate electrode formed on the block insulating layer.

A nonvolatile semiconductor memory device includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having an organic molecule including a porphyrin structure.

Growing community of inventors

Tokyo, Japan

Masaya Terai