Mitsubishi Chemical Corporation

Masaya Sugiyama

Masanori Yamazaki

Hiromu Watanabe

Yasuhiro Kawase

Makoto Ikemoto

Hideki Kiritani

Naoyuki Komuro

An agglomerated boron nitride powder, including a tap density of 0.6 g/ml or more and less than 0.8 g/ml and an interparticle void volume of 0.5 ml/g or more. A heat dissipation sheet, including the agglomerated boron nitride powder. An agglomerated boron nitride powder that enables a heat dissipation sheet to have improved thermal conductivity and good withstand voltage characteristics, a heat dissipation sheet containing the agglomerated boron nitride powder, and a semiconductor device including the heat dissipation sheet are provided.

Agglomerated boron nitride powder, heat dissipation sheet, and semiconductor device

To provide a composition which satisfies a high K1c value, a high glass transition temperature and a low viscosity simultaneously, and which is capable of forming an interlayer filler layer for a layered semiconductor device of which stable bonding is maintained even regardless of changes of environment. A composition comprising an epoxy compound (A) having a viscosity at 25&#xb0; C. of at most 50 Pa&#xb7;s, an amine compound (B) having a melting point or softening point of at least 80&#xb0; C., and an amine compound (C) having a melting point or softening point of less than 80&#xb0; C., wherein the proportion of the amine compound (C) is at least 1 part by weight and less than 40 parts by weight per 100 parts by weight of the total amount of the amine compound (B) and the amine compound (C).

Composition for interlayer filler of layered semiconductor device, layered semiconductor device, and process for producing layered semiconductor device

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Tokyo, Japan

Masaya Sugiyama