Sony Corporation

Sony Semiconductor Solutions Corporation

Masaya Shimoji

Yukihiro Sayama

Takayuki Shoya

Akiko Ogino

Yoshikazu Tanaka

Atsushi Yamamoto

Taichi Natori

Yoshinori Toumiya

Tadayuki Dofuku

Yuichi Seki

Yuuji Nishimura

Yasunori Koshino

Hitomi Kamiya

Ina Hori

Youichi Otsuka

Kazuaki Ogawa

Kouichi Itabasi

Mitsuru Ishikawa

Yoichi Ootsuka

Yoshiaki Kitano

Toyomi Jinwaki

Yosuke Takita

Takashi Nakashikiryo

Ryou Chiba

Takafumi Nishi

The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.

Solid-state imaging element and method for manufacturing the same, and electronic device

The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.

Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus

A solid-state image capture device including: at least one photoelectric converter at an image capture surface of a substrate; at least one on-chip lens at the image capture surface of the substrate and above a light-receiving surface of the photoelectric converter; and an antireflection layer on an upper surface of the on-chip lens. The antireflection layer contains a binder resin having a lower refractive index than that of the on-chip lens and low-refractive-index particles having a lower refractive index than that of the binder resin.

Solid-state image capture device, manufacturing method therefor, and electronic apparatus

Disclosed herein is a solid-state image pickup device including: a trench formed in an insulating film above a light-receiving portion; a first waveguide core portion provided on an inner wall side of the trench; a second waveguide core portion filled in the trench via the first waveguide core portion; and a rectangular lens formed of the same material as that of the second waveguide core portion and provided integrally with the second waveguide core portion.

Solid-state image pickup device, method of manufacturing the same and electronic apparatus

A solid-state image capture device includes: at least one photoelectric converter provided at an image capture surface of a substrate to receive incident light at a light-receiving surface of the photoelectric converter and photoelectrically convert the incident light to thereby generate signal charge; at least one on-chip lens provided at the image capture surface of the substrate and above the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface; and an antireflection layer provided on an upper surface of the on-chip lens at the image capture surface of the substrate. The antireflection layer contains a binder resin having a lower refractive index than the on-chip lens and low-refractive-index particles having a lower refractive index than the binder resin.

Growing community of inventors

Kumamoto, Japan

Masaya Shimoji